Periodic entanglement of magnons in an antiferromagnet

The dynamics of entanglement for two-mode magnons in an antiferromagnet is investigated according to the entanglement criterion proposed by Duan et al. [L.M. Duan, G. Giedke, J.I. Cirac, P. Zoller, Phys. Rev. Lett. 84 (2000) 2722]. It is shown that entanglement between the two modes of magnons can be generated and occurs periodically with time.     

New Power Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with a Folded Accumulation Layer

A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is proposed to improve the performance of the breakdown voltage and specific on-resistance. Three kinds of technologies, which are the additional electric field modulation effect, majority carrier accumulation and increasing the effective conduction area, are applied simultaneously by a semi- insulating polycrystalline silicon layer deposited over the top of thin oxide covering the drift region. It is indicated that by the simulator, the ideal silicon limits of the breakdown voltage and specific on-resistance have been broken due to the complete three-dimensional reduced surface field effect and the doubled majority carrier accumulation layer.     

Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors

In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.     

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.     

Realization of an All-Fibre Self-Organization Intra-Cavity Coherent Erbium-Doped Fibre Laser

An intra-cavity coherent coupling Michelson Er-doped fibre （EDF） laser （MCEDFL） is proposed and demonstrated. Characteristics of the MCEDFL are investigated. It is found that the MCEDFL with a polarizer can be coherent combined effectively. By the experiment based on fibre Bragg gratings （FBGs） with different reflectivity, we find that the reflectivity of the FBG play a vital role in improving the performance of the MCEDFL. This outcome adequately shows many favourable features, such as high efficiency, easy operation, and simple all-fibre configuration.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

2277-W continuous-wave diode-pumped heat capacity laser

A high power continuous-wave (CW) diode-pumped Nd:YAG laser operated in heat capacity mode is demonstrated by use of two identical highly efficient diode-pumped laser heads placed in a plane-plane resonator. The laser heads are uniformly pumped with a five-fold symmetrical side-pumping configuration,and each head is able to output maximum output power of 2200 W at 808 nm. Under a total pump power of 4290 W, the output power of the laser at 1064 nm is up to 2277 W, corresponding to an optical-to-optical efficiency of 53.1%.     

In-phase output beam from broad-area diode array using Talbot cavity

The robust phase locking of a linear diode array consisting of 49 broad-area emitters was demonstrated.The single lobe in the far field with output power of 0.83 W was observed. The far-field divergence was reduced to 2.0 mrad. The spectral bandwidth was reduced from 1.7 to 0.13 nm.     

Simulation of optical field in laser resonators cavity by eigenvector method

In this paper, an Eigenvector method (EM) for the calculation of optical resonator modes and beam propagation is introduced, in which the transit matrix of an optical resonator is obtained by dividing the mirror into finite grids based on the Fresnel–Kirchoff diffractive integral equation. Then, the eigenvectors, representing the multimode characteristics of the resonator, can be calculated by solving the integral matrix eigenequation. The merits of EM include that the considerably simpler procedure of solution of eigenvectors of the matrix eigenequation replaces the complicated iteration in traditional methods, and there is no dependence on the initial field distribution, and a number of modes can be derived once and the discrimination capability of the resonator can be evaluated easily. The examples using EM to simulate con-focal resonators with small or large Fresnel numbers are given, and the calculated results, well matched with Fox–Li method or Lagueree–Gaussian approximation analytical solution, prove that EM is highly feasible and reasonable.     

ICF靶用空心玻璃微球耐压性能测试

 利用自行研制的空心微球耐外压装置和充气装置，测试了目前激光惯性约束聚变实验打靶使用的空心玻璃微球耐内压能力和耐外压能力。空心玻璃微球采用液滴法制备，直径为180～250 mm、壁厚为0.8~4.0 mm。理论计算表明，当微球纵横比超过90时，耐外压能力与球壳材料的杨氏模量有关，由此测量得到的空心玻璃微球杨氏模量为55~75 GPa。玻璃微球的耐内压能力主要与球壳材料的抗拉强度有关，实验测量得到的玻璃微球抗拉强度为90~140 MPa。