Design of infrared laser pulses for the deexcitation of highly excited homonuclear diatomic molecules

We explore the possibility of using shaped infrared laser pulses to deexcite a homonuclear diatomic molecule from its highest vibrational state down to its ground vibrational state. The motivation for this study arises from the need to deexcite alkali metal dimers in a similar way so as to stabilize molecular Bose-Einstein condensates. We demonstrate that for the case of the H(2) molecule, where it is possible to evaluate all the necessary high accuracy ab initio data on the interaction of the molecule with an electric field, we are able to successfully design a sequence of infrared laser pulses to accomplish the desired deexcitation process in a highly efficient manner.     

On projective modules over quantum polynomials

The present paper can be considered as a continuation of [6] and includes an extension of the main result of [1]. This research is partially supported by the Russian Foundation for Basic Research and by INTAS, grant No. 93-2618. Translated from Itogi Nauki i Tekhniki, Seriya Sovremennaya Matematika i Ee Prilozheniya. Tematicheskie Obzory. Vol. 40, Algebra-6, 1996.     

Raman scattering in ion-implanted silicon exposed to rf-plasma treatment

The structural changes in implantation-amorphized silicon layers under radio-frequency (rf) discharge treatment, are studied by the Raman technique. The results are compared with those of thermally annealed samples. The rf treatment is shown to result in amorphous phase relaxation in silicon, while the thermal annealing converts a-Si into c-Si. The a-Si relaxation model under rf-plasma treatment is discussed.     

Measurements of insulator band parameters using combination of single-electron and two-electron spectroscopy

We describe the application of low energy time-of-flight coincidence (e,2e) spectroscopy for measurements of the energy band parameters of a dielectric. The (e,2e) spectrometer can operate also in a single-electron mode by switching off coincidence conditions, and can be used for recording electron energy loss spectra (EELS). Thus, the combination of (e,2e) and EELS allows the measurement of energy gap E_g, valence bandwidth ΔE_val, electron affinity χ and excitonic levels position E_ex of a dielectric. The energy band parameters of LiF film deposited on Si(001) surface are measured: ΔE_val=      

The effect of multiple electron-electron scattering on the energy distribution of electrons in a correlated pair

A unit event of electron-electron scattering in LiF layers is studied by correlation spectroscopy of scattered electrons. The energy distribution of electrons in a correlated pair when a 15-to 55-eV free electron is scattered by a valence electron of LiF is studied. It is shown that single electron-electron scattering prevails and the distribution is uniform when the energy of the primary electron is below 25 eV. As the energy of the primary electron increases, the formation of correlated pairs of electrons with equal energies becomes the most probable. With the energy of the primary electron above 40 eV, the pairs with substantially different electron energies dominate. Such evolution of the energy distribution of the electrons in the pair stems from the fact that first one and then the other electron of the pair successively takes part in electron-electron scattering. A phenomenological model for the single scattering and double scattering of primary electrons in LiF films is considered. Results obtained indicate that the strengths of single scattering and double scattering channels become comparable at electron energies above 25 eV.     

Improved measurement of the K+-->pi+nunu; branching ratio

An additional event near the upper kinematic limit for K+-->pi(+)nunu; has been observed by experiment E949 at Brookhaven National Laboratory. Combining previously reported and new data, the branching ratio is B(K+-->pi(+)nunu;)=(1.47(+1.30)(-0.89))x10(-10) based on three events observed in the pion momentum region 211相似文献   

An application of the electron mirror in the time-of-flight spectrometer

We suggest applying of the spherical electron mirror in the time-of-flight electron spectrometer with a position sensitive detector in order to increase the effective acceptance solid angle of the spectrometer. The spherical electron mirror is placed near the specimen and it focuses electrons on a position sensitive detector as a converging electron flux. The electron mirror increases the acceptance angle of the spectrometer by a factor of 20. The electron mirror of the spectrometer consists of an inner spherical electrode of the radius R and an outer spherical electrode of the radius 1.1R. The central segment of the inner electrode inside the linear angle of 80° is made of a grid. The detector plate radius is about 0.23R. The acceptance solid angle of the spectrometer with this electron mirror is about 1.1sr, the range of the polar angle of emission is 20°–90° relative to the surface normal, and the range of the azimuth angle of emission at its maximum is ±36° relative to the basic plane of the spectrometer. The design of the spectrometer allows to recover the electron trajectory for each detected electron and to calculate the energy and the emission angle of the electron. The energy resolution of the spectrometer is about 0.2 eV/ns for the electron energy of 10 eV. The energy range is from E_min0.1eU_r up to eU_r, where U_r is the retarding potential of the electron mirror. The perturbing influence of the grid of the electron mirror limits mainly the angular resolution of the spectrometer and affects relatively slightly the energy resolution. The electron spectrometer with two detectors and two electron mirrors symmetric about the spectrometer axis allows to measure electron pairs in coincidence in a wide range of emission angles and energies with k-resolutions.     

Theory of high-T c superconductivity based on the fermion-condensation quantum phase transition

A theory of high-temperature superconductivity based on the combination of the fermion-condensation quantum phase transition and the conventional theory of superconductivity is presented. This theory describes maximum values of the superconducting gap, which can be as big as Δ₁～0.1ε _F , with ε _F being the Fermi level. We show that the critical temperature 2T _c ?Δ₁. If the pseudogap exists above T _c , then 2T*?Δ₁ and T* is the temperature at which the pseudogap vanishes. A discontinuity in the specific heat at T _c is calculated. The transition from conventional superconductors to high-T _c ones as a function of the doping level is investigated. The single-particle excitations and their lineshape are also considered     

Structural Study of Defects in Granulated EP741NP Nickel Alloy

Crystallography Reports - Fracture regions in a nickel alloy have been investigated by electron microscopy. HfO2 particles are mainly found in the fatigue crack zone. Their morphology and crystal...