基于MOCVD三步生长的GaAs/Si外延技术EI北大核心CSCD

在硅(Si)上外延生长高质量的砷化镓(GaAs)薄膜是实现硅基光源单片集成的关键因素。但是,Si材料与GaAs材料之间较大的晶格失配、热失配等问题对获得高质量的GaAs薄膜造成了严重影响。本文利用金属有机化学气相沉积(MOCVD)技术开展Si基GaAs生长研究。通过采用三步生长法,运用低温成核层、高温GaAs层与循环热退火等结合的方式,进一步降低Si基GaAs材料的表面粗糙度和穿透位错密度。并利用X射线衍射(XRD)ω-2θ扫描追踪采用不同方法生长的样品中残余应力的变化。最终,在GaAs低温成核层生长时间62 min(生长厚度约25 nm)时,采用三步生长、循环热退火等结合的方式获得GaAs(004)XRD摇摆曲线峰值半高宽(FWHM)为401″、缺陷密度为6.8×10^(7) cm^(-2)、5μm×5μm区域表面粗糙度为6.71 nm的GaAs外延材料,在材料中表现出张应力。     

Coupling characteristics of laterally coupled gratings with slots

Laterally-coupled ridge-waveguide distributed feedback lasers fabricated without epitaxial regrowth steps have the advantages of process simplification and low cost. We present a laterally coupled grating with slots. The slots etched between the ridge and grating area are designed to suppress the lateral diffusion of carriers and to reduce the influence of the aspect-ratio-dependent-etching effect on the grating morphology in the etching process. Moreover, the grating height in this structure can be decreased to lower the aspect ratio significantly, which is advantageous over the conventional laterally coupled ridge waveguide gratings. The effects of five main structural parameters on the coupling characteristics of gratings are studied by MODE Solutions. It is found that varying the lateral width of the grating can be used as an effective way to tune the coupling strength; narrow slots (100 nm and 300 nm) and wide ridge (2 μm-4 μm) promote the stability of grating coupling coefficient and device performance. It is important to note that the grating bottom should be fabricated precisely. The comparative study of carrier distribution and mode field distribution shows that the introduction of narrow slots can strengthen the competitive advantage and stability of the fundamental mode.     

P2+和P+注入硅固相外延过程时间分辨的反射率研究

本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×10¹⁴/cm²P₂⁺和90KeV,2×10¹⁴/cm²P⁺注入硅于550℃退火时的固相外延过程。发现了P₂⁺,P⁺注入硅样品的固相外延过程具有不同的特征。这种差异是由于P₂⁺和P⁺在硅中引入不同的损伤造成的。P⁺注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。 关键词：     

量纲分析的线性代数方法

把量纲概念与矢量空间联系起来,提出用线性代数进行量纲分析的方法,并举例说明。     

叶型偏差对整机环境中涡轮性能的影响

叶型加工和装配的误差可能会对涡轮部件乃至发动机整机的性能产生显著的影响。本文针对某整机环境中的涡轮部件,采用数值模拟结合实验的方法,研究了涡轮叶型偏差对其气动性能的影响。结果表明:在整机环境中,叶型偏差首先导致涡轮部件气动性能的微小变化,而整台发动机的工作点随之改变,导致涡轮部件的来流条件、各级涡轮的转速和速度三角形以及其内部的流动细节均会发生明显的变化,最终叶型偏差对涡轮部件气动性能的影响被显著放大。     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

凝聚相有机分子的激发能传递研究(Ⅱ)——激光染料二甲基-POPOP和DCM分子间的激发能传递

利用荧光发射及其衰变动力学测量,研究了激光染料分子二甲基-POPOP和DCM在溶液中的分子间能量传递。所得结果证实:激发态二甲基—POPOP分子荧光被猝灭的程度,随所加入DCM浓度的增大而增大。尽管DCM的荧光寿命随二甲基—POPOP的猝灭而增加。然而,DCM的加入并不改变二甲基—POPOP的荧光寿命。在固定DCM浓度,而增加二甲基—POPOP浓度时,相似的结果同样被观测到。这些结果表明:激发态二甲基—POPOP分子通过辐射传能机理向基态DCM传递激发能,其结果将入射光的波长从紫外直接转换到波长大于600nm的光谱区。在本文中也简要讨论了进一步改善这一传能过程效率的措施。     

低覆盖度的Au/GaN(0001)界面的同步辐射研究

利用同步辐射光电子能谱研究了低覆盖度Au在GaN(0001)表面的初始生长模式,肖特基势垒高 度以及界面的电子结构.结果表明，Au沉积初始阶段有界面的化学反应,随后呈三维岛状生长 .由光电子能谱实验确定的肖特基势垒高度为14 eV. 通过对界面价带谱和Au 4f芯能级谱 的分析,确定了界面化学反应的存在.利用线性缀加平面波方法计算了GaN(0001)和Au的价带 态密度并分析了化学反应产生的机理,认为在初始阶段界面形成了Au_Ga合金. 关键词： 同步辐射 光电子能谱 Au/GaN欧姆接触 态密度     

强流脉冲电子束应力诱发的微观结构

利用强流脉冲电子束装置在各种工艺条件下对奥氏体不锈钢、单晶铝及多晶铝等面心立方金属进行辐照处理.利用扫描电子显微镜和透射电子显微镜等详细分析了辐照样品的变形组织与结构.通过分析，在一定程度上建立起强流脉冲电子束诱发的应力特征与变形结构之间的关系，并对目前现有的几种应力波数值模拟结果进行了分析.实验结果表明，强流脉冲电子束能够在材料内部诱发10²—10³MPa的应力，其传播方式与材料的 晶体结构关系密切.这一应力是导致材料深层性能与微观组织结构发生变化的根源所在. 关键词： 强流脉冲电子束 应力 微观结构 变形