n次乘、开方去9余数验算法

求相同因数乘积的运算叫做乘方;求一个数方根的运算叫做开方。乘方与开方运算可用珠算,亦可用笔算,但运算过程比较烦琐,稍不当心就容易出错,因此答数需要检查,而检查的方式往往复算,甚至多次复算,这是非常乏味的。现介绍一种简捷的"去9余数验算法",不论是多少次乘、开方运算,只要按此法验算,     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

光纤探头式分光光度计在丙酮碘化反应动力学研究中的应用

丙酮的碘化反应——作为复杂反应的一个例子,是研究化学反应动力学时常被选用的一个物理化学实验。在该实验中,常用72型分光光度计通过间歇取样的方法,测出不同反应时刻反应物碘的浓度,经作图计算求得反应的速度常数。显然这种方法既费时又麻烦,且误差也较大。近几年来,光纤传感器的出现为我们提供了一种快速简便,可连续进行测量的分析     

An Electro—Optical Modulator Based on GeO2—Doped Silica Ridge Waveguides with Thermal Poling

A Mach-Zehnder electro-optic modulator is designed and fabricated based on upper-clad GeO2-doped silica ridge waveguides with thermal poling.The electro-optic coefficient obtained is about 0.05pm/V and is polarizationinsensitive.An extinction ratio of over 17dB is achieved.The transmission loss of the modulator for the TE mode is 2-3dB higher than that for the TM mode after the poling.     

红外光谱中溶剂效应机理初探——配位机制的提出

本文就红外光谱中溶剂效应机理提出了溶质和溶剂分子间的瞬时配位作用机制，认为同－溶质在不同溶剂中的振动波数不同，是由于这种瞬时配位作用改变了溶质价电子运动状态所致。据此提出了溶剂效砂的定量关系式，测定了七种溶剂配位效应常数。用这一套经验参数处理了几种取代苯甲酸的羰基伸缩振动的溶剂效应，得较好的线性关系。还发现羰基的振动波数与取代基的Ｈａｍｍｅｔｔ常数σ之间，羰基伸缩振动对溶剂效应的敏感度与σ之间，Ｈ     

纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

用辉光放电发射光谱对镀锌铁板钝化防护层的逐层分析

本文应用辉光放电发射光谱分析技术，以纯金属作标样，对几种用不同工艺处理的镀锌铁板钝化防护层进行逐层定量分析。得到了镀锌板中锌、铁的含量随浓度变化的曲线，取得了满意的分析结果，为铁板镀锌钝化防护层的工艺研究提供了可靠的依据。     

抽象泛函微分方程：Liapunov泛函与比较原则

本文用比较原则研究一类抽象泛函微分方程解的有界性和稳定性。     

数海星空——神奇的20阶数学迷宫图

今年是明代珠算大师程大位逝世400周年，为了纪念这位珠算大师对于民族文化——珠算所做出的杰出贡献，特此编写20阶数学迷宫图，以数字世界的奥妙来展示珠算文化的无穷魅力。