硫烷化学

硫烷是一类具有三中心四电子过价键的化合物，它即可以作为特殊的反应试剂，又是有机反应的重要中间体。本文对其结构，合成，性质及其应用作一简单综述。     

数学解题应重视隐含条件的挖掘

数学解题应重视隐含条件的挖掘江苏省东台市中学邹锦程所谓隐含条件，是指在数学问题中，除了直接给出的已知条件外，还没直接给出，需要人们去发掘的条件。这种条件一般隐含在定义、定理、公式、法则、图形之中，含而不露，容易被忽视，因而造成解题错误。下面就几个方面...     

基于四水听器的充水弹性管声速测量方法*

实验室中水声材料声学参数的测量主要在水声声管中进行。管内平面波声速是正确测量这些参数的基础。该文提出一种基于四水听器结合不同边界的测量充水弹性管中声速的新方法。该方法利用4个固定位置处的水听器,采用最小二乘的方法,使得两组水听器分别得到的声管末端入射波声压差值的平方最小的声速即为管内平面波声速。该方法利用单频信号,在每一频率点均可测得声速,可以在任一种声管末端边界下进行测量,同时无需知道各水听器到边界的精确距离,在文中的3种边界下声速测量结果具有很好的一致性,实验操作简单、误差很小。该方法的仿真结果与管内声速的理论值吻合得很好,同时实验测量结果与仿真值之间的误差很小,证明了方法的准确性以及鲁棒性,为声管声速测量提供一个很好的思路。     

凹槽叶顶冷气射流对涡轮叶尖泄漏流动的影响

涡轮叶尖泄漏流动对涡轮通道内流动损失有着显著影响,叶顶冷气射流对控制叶尖泄漏流动和改善涡轮叶尖气热性能有重要意义.本文利用数值模拟方法,研究了叶顶冷气喷射位置和喷射流量对高压涡轮凹槽叶顶间隙泄漏流动控制的影响.文中重点分析了泄漏流动结构及涡轮气动效率的变化,探讨了冷气对刮削涡这一间隙内主控流动结构演化的影响.研究表明,...     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

尘埃粒子计数器中光源对传感器光通量的影响分析

在Mie散射理论基础上，由单分散射的光强表达式导出在偏振光的入射条件下一定立体角内的散射光通量的表达式，并与自然光入射作比较。计算了在相同强度不同光源入射下，尘埃粒子计数器的两种常用散射光收集系统收集的散射光通量。结果表明：采用近前向散射光收集系统得到的光通量相等；而采用直角方向散射光收集系统时两者并不相等，且在平面偏振光入射时，收集的散射光通量还跟探测器中心与入射光偏振方向夹角有关。用MATLAB编程计算，得出了在探测器中心与偏振方向的夹角成90°或270°位置时，收集的散射光通量有极值的结论，为激光尘埃计数器传感器光学设计提供了依据。     

Simultaneous measurement of SO_2 and NO_2 concentration using an optical fiber-based LP-DOAS system

SO2 and NO2 are the most important pollution in atmosphere.An optimized long path(LP)differential optical absorption spectroscopy(DOAS)system of high light intensity at an ultraviolet(UV)wavelength is proposed and used to measure the concentration of SO2 and NO2 simultaneously.In contrast to the traditional DOAS,the system adopted a Y-type optical fiber structure instead of a combination of mirrors in the telescope.The UV light intensity test shows that the light intensity of UV can arrive to above 80% of the max measuring range when the light path reaches 135 m,and the integral time of the spectrograph is only 15 ms.The system is proved to be efficacious through laboratory calibration.The maximum error of SO2 calibration is 4.19%,and is 5.22% for NO2.The error of the SO2 and NO2 mixture calibration is within 10%.Field measurement is implemented in a wastewater treatment plant in winter.The measurement light path is 738 m.The concentration of SO2 varies from 6μg/m^3(2.26 ppb)to 20μg/m^3(7.52 ppb),and the concentration of NO2varies from 100μg/m^3(53.2 ppb)to 200μg/m^3(106.4 ppb)approximately.The results are in accordance with the data from a monitoring station nearby in magnitude order and variation tendency mostly.     

SrTiO3/α-Fe2O3异质结光阳极光电转换性能

作为一类重要的光电极材料,α-Fe2O3在太阳能转化方面有着潜在的应用前景.但是,光生电子空穴对的再复合导致α-Fe2O3的光电量子产率很低.为了抑制光生电子空穴对的再复合,提高α-Fe2O3的光电量子产率,采用Spin-coating方法在透明导电玻璃FTO(SnO2:F)衬底上制备了SrTiO3/α-Fe2O3异质结薄膜光电极,并对该光电极进行了XRD、SEM、紫外-可见透射光谱的表征.在三电极光电化学测试系统中对薄膜的光电流-电压特性、入射光子电流转化效率(Incident photon to current efficiency,IPCE)对波长的依赖性进行了表征.在相同的Xe灯照射条件下,SrTiO3/α-Fe2O3异质结光电极的光电流及IPCE值大于单一的SrTiO3、α-Fe2O3各自的光电流及IPCE值,这与理论预测的结论一致.     

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably.     

基于光谱合束技术的透射光栅模拟设计

半导体激光器光谱合束技术能够实现近衍射极限的高功率激光输出,已成为当前研究热点。衍射光栅的性能直接决定光谱合束的激光输出效果。模拟设计了一种针对940 nm波长、熔融石英材料的亚波长透射光栅。基于严格耦合波理论对光栅结构进行初步设计,运用Rsoft软件依次对光栅占空比、脊高和周期等参数进行优化确定,同时分析了各个参数对光栅衍射效率的影响。所设计的透射式光栅实现第-1级衍射级次的波分复用功能,衍射效率达到91.2%(TE模式),同时压缩其他衍射级次,使其衍射效率降到1.2%以下。同时在光栅入射角度59°±3°范围内保持90%以上的衍射效率,实现高功率激光输出的同时具有较高的误差容错率,易于调节,满足光谱合束技术的要求。