一种简单的光纤光栅电调谐方法

采用较简单的双点源真空蒸发法在光栅外表面上蒸镀一层均匀铝膜,利用电流流过铝膜时产生的电阻热改变光栅的温度而使光栅的中心波长向长波方向发生改变.光栅中心波长的变化与所加电流的平方成正比.实验中用较小的电流(约43mA)获得了较大的波长调谐范围(约4nm),其调谐精度达到2.15×10^-3nm/(mA)².     

Design studies on the 4π γ-ray calorimeter for the ETF experiment at HIRFL-CSR

A high detection efficiency calorimeter which is used to detect γ-rays with energies from 1 MeV up to 10 MeV as well as light charged particles has been proposed. Design of the geometry, results of the crystal tests and Monte Carlo simulations are presented in this paper. The simulation results confirm that the calorimeter can obtain high detection efficiency and good energy resolution with the current designed geometry. And the calorimeter is competent for the future External Target Facility (ETF) experiments.     

矩阵多分裂迭代法的收敛条件

本文给出了求解非奇异线性方程组的矩阵多分裂并行迭代法的一些新的收敛结果.当系数矩阵单调和多分裂序列为弱正则分裂时,得到了几个与已有的收敛准则等价的条件,并且证明了异步迭代法在较弱条件下的收敛性.对于同步迭代,给出了与异步迭代不同且较为宽松的收敛条件.     

均匀球体转动惯量的多种求法

用不同的方法计算了均匀球体的转动惯量,以开拓学生的思路,提高学生的学习兴趣.     

处理参数问题的思维路径

参数问题广泛地存在于高中数学的各类问题中，也是近几年来高考重点考查的热点问题之一．本文将介绍处理参数问题的几种主要方法．     

35MeV/u36Ar+124Sn反应中类弹产物的同位素分布特性

测量了35MeV/u³⁶Ar+¹²⁴Sn反应中5.3°处类弹产物的同位素分布,观察到随着出射动能的增加,产物的平均中质比逐渐减小而接近弹核的平均中质比.同位旋相关的量子分子动力学计算表明,随着反应时间的增加,类弹产物的平均出射动能逐渐减小而平均N/Z值则逐渐增大.另外,碰撞参数也影响类弹产物的同位素组成:随着碰撞参数的减小,类弹产物的平均N/Z值减小.     

背部支撑主反射镜的面形分析与支撑点优化

应用有限元方法对背部支撑的主反射镜进行静力学分析.分别对三点支撑和九点支撑进行计算,得到主镜反射面的变形值.以齐次坐标变换法和最小二乘法为理论依据求解反射面变形的PV/RMS值.利用有限元分析软件提供的二次开发功能,编写计算程序,在软件内部调用该程序直接获得PV/RMS值,利用该值作为优化分析的目标函数,寻求背部支撑的最佳支撑点位置.     

CsI(Tl)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(Tl)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究. 结果表明, CsI(Tl)晶体光产额在室温范围内随着温度的增加而增加, 在－2℃—8℃温度范围内的平均温度系数为0.67%/℃, 在8℃—25℃温度范围内的平均温度系数为0.33%/℃. 而对所使用的APD, 其增益在室温范围内的温度系数为－3.68%℃(工作电压400V). APD结合CsI(Tl)晶体在室温下对¹³⁷Cs的662keV γ射线的能量分辨可达5.1%.     

电化学刻蚀法制备LaB6场发射微尖锥阵列

采用电化学刻蚀方法,成功制备出单尖的六硼化镧、钼、钨及钨铼合金场发射冷阴极尖锥,并对这几种场发射单尖锥阴极的电子发射性能进行了测试比较.结果表明,LaB₆作为场发射阴极,具有良好的发射性能和稳定性.在〈111〉面单晶LaB₆基片上,用PECVD法沉积非晶硅作掩膜,制备出具有一定高度的LaB₆微尖锥场发射阵列,结果发现,LaB₆基底较为平整,尖锥阵列呈现出各向异性.该结论对LaB₆材料在场发射阴极方面的进一步研究具有重要的指导意义.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.