Ultrafast optical probe of coherent acoustic phonons in Co_2MnAl Heusler film

In this work, pronounced oscillations in the time-resolved reflectivity of Heusler alloy Co_2MnAl films which are epitaxially grown on Ga As substrates are observed and investigated as a function of film thickness, probe wavelength,external magnetic field and temperature. Our results suggest that the oscillation response at 24.5 GHz results from the coherent phonon generation in Co_2MnAl film and can be explained by a propagating strain pulse model. From the probe wavelength dependent oscillation frequency, a sound velocity of(3.85±0.1)×10~3m/s at 800 nm for the epitaxial Co_2MnAl film is determined at room temperature. The detected coherent acoustic phonon generation in Co_2MnAl reported in this work provides a valuable reference for exploring the high-speed magnetization manipulation via magnetoelastic coupling for future spintronic devices based on Heusler alloy films.     

Structure and Magnetic Properties of （In,Mn）As Based Core-Shell Nanowires Grown on Si（111） by Molecular-Beam Epitaxy

We report the structure and magnetic properties of （In,Mn）As based core-shell nanowires grown on Si （111） by molecular-beam epitaxy. Compared to the core InAs nanowire with a flat side facet and consistent diameter, the core-shell nanowire shows a rough sidewall and an inverse tapered geometry. X-ray diffraction, transmission electron microscopy and energy-dispersive x-ray spectroscopy show that （In,Mn）As is formed on the side facets of In As nanowires with a mixture ofwurtzite and zinc-blende structures. Two ferromagnetic transition temperatures of （In,Mn）As from magnetic measurement data are observed： one is less than 25 K, which could be attributed to the magnetic phase with diluted Mn atoms in the InAs matrix, and the other is at ～300 K, which may originate from the undetectable secondary phases such as MnAs nanoclusters. The synthesis of （In,Mn）As based core-shell nanowires provides valuable information to exploit a new type of spintronic nano-materials.     

Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet

A gated Hall-bar device is made from an epitaxially grown, free-standing InSb nanosheet on a hexagonal boron nitride (hBN) dielectric/graphite gate structure and the electron transport properties in the InSb nanosheet are studied by gate-transfer characteristic and magnetotransport measurements at low temperatures. The measurements show that the carriers in the InSb nanosheet are of electrons and the carrier density in the nanosheet can be highly efficiently tuned by the graphite gate. The mobility of the electrons in the InSb nanosheet is extracted from low-field magneotransport measurements and a value of the mobility exceeding $\sim 1.8\times10^4$ cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$ is found. High-field magentotransport measurements show well-defined Shubnikov-de Haas (SdH) oscillations in the longitudinal resistance of the InSb nanosheet. Temperature-dependent measurements of the SdH oscillations are carried out and key transport parameters, including the electron effective mass $m^{\ast }\sim 0.028 m_{0}$ and the quantum lifetime $\tau \sim 0.046 $ ps, in the InSb nanosheet are extracted. It is for the first time that such experimental measurements have been reported for a free-standing InSb nanosheet and the results obtained indicate that InSb nanosheet/hBN/graphite gate structures can be used to develop advanced quantum devices for novel physics studies and for quantum technology applications.     

基于耗散能密度的疲劳裂纹扩展规律研究

在疲劳裂纹扩展过程中,裂纹尖端的能量耗散决定了裂纹扩展能力.研究基于耗散能密度的裂纹扩展规律更有物理意义.耗散能密度是材料疲劳性能的一种表征参数,实验测得了镍基高温合金GH4169材料室温和450℃高温的耗散能密度与控制应力幅值的关系曲线.参照Paris公式的形式提出了基于耗散能密度的裂纹扩展方程,并通过疲劳裂纹扩展试验测量了GH4169材料在室温和450℃高温下的裂纹扩展速率与耗散能密度的关系.试验结果的总体趋势与所提出的扩展方程一致.     

微重力条件下Pd40Ni40P20合金凝固特征

研究了Pd₄₀Ni₄₀P₂₀合金在重力(1g)及微重力(μg)条件下凝固组织的差异,微重力条件下的样品中组织细化,1次枝晶短且方向性差,当冷速v为0.056K/s时,其1次枝晶间距L值远小于同样冷速条件下地面获得的组织中的L值,而与地面冷速为0.67K/s的L值相当。在此基础上推算了空间与地面不同冷速下固液界面前沿液相中溶质输运系数的差异。     

Ag/Si纳米颗粒多层膜的合成

使用多靶离子束溅射沉积方法制备出Ag/Si多层膜 .利用原位低角X射线衍射技术和截面高分辨透射电子显微镜观察 5 0～ 30 0℃退火过程中Ag/Si多层膜各亚层间发生的扩散现象 ,并由此分析研究Ag/Si多层膜微观结构变化 ,即Ag/Si纳米颗粒多层膜的形成过程 .计算出Si在Ag亚层中的扩散激活能和频率因子分别为 0 .2 4eV和 2 .0 2× 1 0 ^-20 m² /s,纳米Ag颗粒的尺寸约为5nm .     

高压下Fe73.5Cu_1Nb_3Si13.5B9纳米晶合金的形成

采用X射线衍射、电子衍射及透射电子显微技术研究了Fe73 .5 Cu1Nb3 Si13 .5 B9非晶合金在 82 3K ,1～ 5GPa下退火所形成的纳米晶结构 ,高压实验采用Belt型压力装置 .结果表明 ,压力没有改变合金结晶相的类型 ,但对其纳米晶结构的形成有重要影响 .当压力从常压增加到 5GPa时 ,结晶相α Fe固溶体 (α Fe相 )的尺寸从 1 1 .5nm减小至 5nm .当压力低于 2GPa时 ,α Fe相的体积分数随压力的增高而增加 ,然后随压力进一步增高 (P >2GPa)而减小 .还讨论了压力影响Fe73 .5 Cu1Nb3 Si13 .5 B9纳米晶合金形成的机制 .     

多孔氧化铝薄膜横观各向同性弹性性质的研究

电化学阳极氧化生成的氧化铝薄膜含有高度有序的纳米孔阵列,本文首先假设氧化铝薄膜基体(无孔部分)为各向同性,结合其周期性孔结构特点和均匀化理论,可以得到氧化铝基体和薄膜弹性性质之间的关系。然后利用单轴拉伸结合电子散斑干涉(ESPI)的方法得到薄膜面内的杨氏模量为63.4GPa,并根据均匀化方法得到的基体与薄膜弹性性质的关系进一步推出薄膜横观各向同性的其它弹性参数,如基体杨氏模量等。为证明结果的可靠性,利用推出的弹性参数建立三维有限元模型,模拟纳米压痕实验,得到的加卸载曲线与实验曲线相吻合。     

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

We demonstrate the in situ growth of ultra-thin InA s nanowires with an epitaxial Al film by molecular-beam epitaxy.Our InAs nanowire diameter(～30 nm) is much thinner than before(～100 nm).The ultra-thin InAs nanowires are pure phase crystals for various different growth directions.Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire.Quantum transport study on these devices resolves a hard induced superconducting gap and 2 e-p...     

模糊批量生产计划问题的机会约束规划

描述了模糊单位利润、模糊生产能力以及模糊需求下的批量生产计划,并应用模糊机会约束规划规划建立了模型.当模糊变量是梯形模糊数时,我们将模糊模型转化为确定意义下的模型.为了求解优化模型,我们设计了基于模糊模拟的遗传算法.最后,通过一个数值例子说明算法的有效性.