三维光存储中折射率失配引起的球差补偿

为实现三维光存储中折射率失配引起的球差补偿,建立了光学存储系统模型,获得了折射率失配引起的波前偏差函数与存储深度的表达式.采用泽尔尼克循环多项式对波前偏差函数进行补偿展开.在双光子荧光和单光子共焦荧光读出方式下,均可获得读出荧光强度与存储深度的关系:在折射率失配引起的球差未得到补偿矫正的情况下,存储深度在200 μm左右读出荧光强度基本上下降为零;当折射率失配引起的初级球差被补偿矫正后,读出荧光强度随存储深度的下降得到较好改善;当折射率失配引起的二级球差被补偿矫正后,存储深度在1 mm内存储点强度随深度基本上没有明显地变化.并且对像差补偿方法进行了具体地分析.     

Edge assisted epitaxy of CsPbBr3 nanoplates on Bi2O2Se nanosheets for enhanced photoresponse

Bi$_{2}$O$_{2}$Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical properties. However, it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi$_{2}$O$_{2}$Se nanosheets. Here, a two-step chemical vapor deposition (CVD) route was used to directly grow the CsPbBr$_{3}$ nanoplate-Bi$_{2}$O$_{2}$Se nanosheet heterostructures. The CsPbBr$_{3}$ nanoplates were selectively grown on the Bi$_{2}$O$_{2}$Se nanosheet along the edges, where the dangling bonds provide the nucleation sites. The epitaxial relationships between CsPbBr$_{3}$ and Bi$_{2}$O$_{2}$Se were determined as ${[200]}_{\rm Bi_{2}O_{2}Se}||{[110]}_{\rm CsPbBr_{3}}$ and ${[110]}_{\rm Bi_{2}O_{2}Se}||{[200]}_{\rm CsPbBr_{3}}$ by transmission electron microscopy characterization. The photoluminescence (PL) results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-I band arrangement at CsPbBr$_{3}$/Bi$_{2}$O$_{2}$Se interface, which was confirmed by ultraviolet photoelectron spectroscopy (UPS) and Kelvin probe measurements, and makes the photogenerated carriers transfer from CsPbBr$_{3}$ to Bi$_{2}$O$_{2}$Se. Importantly, the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi$_{2}$O$_{2}$Se sheets, and the fast rise and decay time in microsecond. These results indicate that the direct epitaxy of the CsPbBr$_{3}$ plates on the Bi$_{2}$O$_{2}$Se sheet may improve the optoelectronic performance of Bi$_{2}$O$_{2}$Se based devices.     

导弹超声速尾退分离干扰特性试验

超/高超声速尾退分离在防热、保形、隐身、多次投放、回收等方面具有明显优势,有望成为高超声速飞行器载荷投放的优选方案。由此面临一类新的多体分离问题:超/高超声速尾退分离问题（aft super/hypersonic ejection separation,ASES）。超/高超声速尾退分离问题本质上是带空腔底部流动与多体分离构成的耦合问题,具有流场结构复杂、气动非定常非线性非对称效应显著的特点。针对超声速尾退分离问题,采用网格测力和轨迹捕获（captive trajectory system,CTS）风洞试验方法探索了尾退分离干扰流场的结构,发现可根据流场结构和舵效变化分为低速-亚声速无激波、高亚声速-跨声速弱激波、超声速激波和准自由流弱干扰4种典型干扰特征,揭示了尾流场影响后不同区域的全弹气动特性和舵效特性以及控制律、攻角、高度和Mach数对分离位移和姿态的影响规律。相关结论将有助于增强对尾退分离问题的认识,对尾退分离技术的工程实践具有参考价值。      

Charge ordering modulations in a Bi_0.4Ca_0.6MnO₃ film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi 0.4 Ca 0.6 MnO 3 film with a thickness of 110 nm at 103 K.Six different types of superlattice structures are observed using the selected-area electron diffraction(SAED) technique,while three of them match well with the modulation stripes in high-resolution transmission electron microscopy(HRTEM) images.It is found that the modulation periodicity and direction are completely different in the region close to the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface from those in the region a little further from the Bi 0.4 Ca 0.6 MnO 3 /SrTiO 3 interface,and the possible reasons for this are discussed.Based on the experimental results,structural models are proposed for these localized modulated structures.     

The dynamic stress intensity factor analysis of adhesively bonded material interface crack with damage under shear loading

This paper studies the dynamic stress intensity factor (DSIF) at the interface in an adhesive joint under shear loading. Material damage is considered. By introducing the dislocation density function and using the integral transform, the problem is reduced to algebraic equations and can be solved with the collocation dots method in the Laplace domain. Time response of DSIF is calculated with the inverse Laplace integral transform. The results show that the mode Ⅱ DSIF increases with the shear relaxation parameter, shear module and Poisson ratio, while decreases with the swell relaxation parameter. Damage shielding only occurs at the initial stage of crack propagation. The singular index of crack tip is -0.5 and independent on the material parameters, damage conditions of materials, and time. The oscillatory index is controlled by viscoelastic material parameters.     

近空间升华法制备CdS多晶薄膜的研究

系统地研究了近空间升华法(CSS)制备CdS薄膜沉积速率的影响因素。发现CdS薄膜的沉积速率随升华源温度的升高而增大,但随衬底温度和沉积气压的上升而下降。对所制备样品的结构、表面形貌和光谱透过率特性进行了测试,结果表明：(1)不同氧分压下沉积的CdS薄膜沿(103)晶向择优生长。CdCl₂氛围下退火后,(103)晶向的优势得到进一步加强;(2)不同氧分压制备的CdS薄膜致密且粒径均匀,晶粒的大小随着衬底温度的升高而增大,但薄膜的粗糙度也随之增大;(3)随着CdS薄膜厚度的减小,可见光中短波段的透过率有所增大,有利于提高太阳电池的短波光谱响应。并将CSS制备的CdS多晶薄膜用于CdTe太阳电池的制作,获得了10.29%的光电转换效率,初步验证了该制作工艺的可行性。     

9-戊基咔唑-3,6-双-(炔苯基-4-甲酸乙酯)的合成与双光子特性研究

采用钯催化的碳碳偶合反应合成了9-戊基咔唑-3,6-双-(炔苯基-4-甲酸乙酯)(I).进一步研究了化合物I在四氢呋喃和40%四氢呋喃水溶液中的光物理性质,结果显示,化合物I在40%四氢呋喃水溶液中的紫外吸收峰位置与其四氢呋喃溶液相比没有发生明显移动,它在40%四氢呋喃水溶液中的单光子荧光发射峰出现在453 nm,较其在四氢呋喃溶液的发射有42 nm红移,其荧光量子效率为0.44.用波长为660 nm飞秒激光激发时,化合物I在40%四氢呋喃水溶液中的双光子荧光发射最大峰红移至489 nm,其双光子吸收截面值为251GM,比其在四氢呋喃溶液中的截面(151 GM)增强了60%.     

4-(4-甲氧基苯亚甲基)-2-苯基-5(4H)-噁唑酮纳米带的可控制备及光学特性研究

选取大π共轭体系4-(4-甲氧基苯亚甲基)-2-苯基-5(4H)-噁唑酮作为研究对象,采用再沉淀法制备其纳米晶体,通过研究溶剂、温度、搅拌速度、搅拌时间等因素对所形成的纳米粒子的形貌尺寸的影响,成功制备出了形貌较单一的纳米棒和纳米带结构并进一步考察了它们的紫外吸收和发射光谱,结果表明随着纳米粒子尺寸的增加,其吸收光谱和荧光光谱均出现红移,荧光量子效率随着粒子尺寸的增大略有增大.     

金属纳米颗粒制备中的还原剂与修饰剂*

金属纳米颗粒由于其独特的光学、电学、化学性质以及各种潜在的应用价值,受到不少研究人员的广泛关注。实现金属纳米粒子尺寸、形貌可控,改善粒子分散性和稳定性,提高产率及纯度已成为具有挑战性的研究课题,不断发展和完善金属纳米粒子的合成方法则显得尤为重要。本文总结了目前制备金属纳米材料的几种化学方法：化学试剂还原法、电化学还原法、辐射还原法等,分类介绍了化学试剂还原法中常用的无机、有机还原剂,以及含氮、磷、羧基、巯基小分子有机化合物以及高分子聚合物等修饰剂并重点总结了其还原和修饰机理。     

碰撞能量对反应Sr＋HF转动取向的影响

在推广LEPS势能面上,用经典轨线方法,研究了反应碰撞能量对反应Sr＋HF的转动取向的影响.计算结果与产物轨道角动量模型进行比较.计算结果表明,随着碰撞能量的增加,产物转动取向越强烈.