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201.
Spherical organic-bonded ZnS nanocrystals with 4.0 4-0.2 nm in diameter are synthesized by a liquid-solid-solution method. The photoluminescence spectrum of sample ([S^2-]/[Zn^2+] = 1.0) shows a strong white emission with a peak at 490nm and - 170 nm full widths at half maximum. By Gauss fitting, the white emission is attributed to the overlap of a blue emission and a green-yellow emission, originating from electronic transitions from internal S^2- vacancies level to valence band and to the internal Zn^2+ vacancy level, respectively. After sealingZnS nanocrystals onto InGaN chips, the device shows CIE coordinates of (0.29,0.30), which indicates their potential applications for white light emitting diodes. 相似文献
202.
Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs. The Fano mode is characterized by its ultra-narrow asymmetric spectrum, different from that of a pure electric or magnetic dipole. The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements. 相似文献
203.
The metamaterial analogue of electromagnetically induced transparency by dual-mode excitation of a symmetric resonator
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Electromagnetically induced transparency (EIT) is obtained in a symmetric U-shaped metamaterial, which is at- tributed to the simultaneously excited dual modes in a single resonator under lateral incidence. A large group index accom- panied with a sharp EIT-like transparency window offers potential applications for slowing down light and sensing. 相似文献
204.
Pressure-induced phase transitions of multiferroic BiFeO3 have been investigated using synchrotron radiation X-ray diffraction with diamond anvil cell technique at room temperature. Present experimental data clearly show that rhombohedral (R3c) phase of BiFeO3 first transforms to monoclinic (C2/m) phase at 7 GPa, then to orthorhombic (Pnma) phase at 11 GPa, which is consistent with recent theoretical ab initio calculation. However, we observe another peak at 2θ=7° in the pressure range of 5-7 GPa that has not been reported previously. Further analysis reveals that this reflection peak is attributed to the orthorhombic (Pbam) phase, indicating the coexistance of monoclinic phase with orthorhombic phase in low pressure range. 相似文献
205.
采用高温固相烧结法成功制备了Ba5-3x/2B4O11∶xEu3+(x=0.02~0.22)荧光粉,利用XRD和SEM等对荧光粉进行了结构和形貌表征。 在激发波长为393 nm的条件下,发射峰(596、621、657和706 nm)与Eu3+的5D0-7FJ(J=1,2,3,4)电子跃迁相对应,其中621 nm最强发射峰由Eu3+离子5D0→7F2电偶极跃迁造成。 文章还研究了Eu3+掺杂浓度对Ba5-3x/2B4O11∶xEu3+发光性能的影响,结果表明,荧光粉的发光强度随着Eu3+掺杂量的增加呈现先增大后减小的趋势,Eu3+最佳掺杂量为0.16。 相似文献
206.
Based on the multi-configuration Dirac-Fock method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients and the collision excitation rate coefficients of Sn^10+ ions. It is found that the total DR rate coefficient has its maximum value between 10eV and 100eV and is greater than either the radiative recombination or three-body recombination rate coefficients (the number of free electrons per unit is 10^21 cm^3) for the ease of Te 〉 1 eV. Therefore, DR can strongly influence the ionization balance of laser produced multi-charged tin ions. The related dieleetronie satellite cannot be ignored at low temperature Te 〈 5 eV. 相似文献
207.
We report the amorphization induced high magneto-caloric effect (MCE) of recently developed Gd55Al15Ni30 bulk metallic glass (BMG). The magnetic properties of the Gd55Al15Ni30 BMG are investigated in comparison with that of its crystalline counterpart. It is found that amorphization can increase the saturation magnetization and decrease the hysteresis of Gd55Al15Ni30 alloys, which indicate the possible enhancement of MCE. The magnetic entropy changes and the refrigerant capacity of the BMG as well as the crystalline samples is calculated directly from isothermal magnetic measurements. The results show the amorphization induced high MCE of the alloy and the excellent refrigerant efficiency of Gd55Al15Ni30 bulk metallic glass. 相似文献
208.
209.
Analysis of the influence of various effects on frequency shifts of the acetylene saturated absorption lines
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Frequency shifts of the acetylene saturated absorption lines at
1.5\,$\mu$m with temperature, gas pressure and laser power have been
investigated in detail. The second-order Doppler effect, the recoil
effect, the Zeeman effect, the pressure shift and the power shift
are taken into consideration. The magnitudes of those shifts caused
by various effects are evaluated. In order to reproduce the
stability of $5.7\times10^{ - 14}$ obtained by Edwards, all
necessary conditions are given. The results show that when there is
a larger external magnetic field, the Zeeman shift could not be
neglected, so that the shield should be employed. And the design of
a long cavity is advantageous to reduce the influence of the
second-order Doppler effect. The results also show that at least
$\pm $2.5\du\ temperature control for cavity can effectively prevent
several effects and improve the frequency stability. 相似文献
210.
Si/SiNx/SiO2多层膜的光致发光 总被引:1,自引:0,他引:1
采用射频磁控溅射法,制备了具有强光致可见发光的纳米Si/SiNx/SiO2多层膜,利用傅立叶红外吸收(FTIR)谱,光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰,分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响,结合FTIR谱认为370nm发光与低价氧化物—SiOx(x<2.0)结合体有密不可分的关系。当SiO2层的厚度增大时,发光强度有所增强,800℃退火后出现最强发光,认为具有较大SiO2层厚度的Si/SiNx/SiO2结构多层膜更有利于退火后形成Si—N网络,能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制,并建立了发光的能隙态(EGS)模型。 相似文献