自动倒扭摆内耗仪的研制简讯

这台自动倒扭摆内耗仪的主要用途是,用衰减法测量内耗和弹性模量(与频率的平方成正比)及其与温度的关系.自1947年葛庭隧教授创制第一台低频扭摆内耗仪以来,内耗研究得到了迅速的发展.但是长期以来,扭摆内耗仪一直停留在只是利用灯尺进行目测的水平.随着电子技术的发展,人们注意到扭摆测量的自动化问题,即能够自动控制,自动测量和自动记录内耗、振动频率、动态弹性模量和温度.目前国际上的最先进自动倒扭摆,是西德斯图加特马克斯-普朗克学会金属物理研究所和材料所,在七十年代创制的、能够自动地画出内耗和弹性模量曲线(作为测量温度的函数)…     

荧光分光光度法同时测定多元素的研究：以P—矩阵法计算混合…

本文研究了磷，砷钼杂多酸－罗丹明６Ｇ荧光猝灭反应，以Ｐ－矩阵计算混合体系中痕量磷和砷。本法灵敏度高，选择性好，简便快速，应用于铜合金中的痕量磷和砷测定，获得满意结果。     

Field Emission Enhancement of Carbon Nanotubes by Surface Modification

By employing a multi-walled carbon nanotube （MWCNT） film as the substrate, we obtain Fe tipped carbon nanorods or carbon nanoparticles grown on the outer walls of MWCNTs by combining sputtering deposition of Fe films and rf plasma enhanced chemical vapour deposition at high temperature. Scanning electron microscopy and high-resolution transmission electron microscopy are used to examine the structure of carbon nanorods and carbon nanoparticles. In addition, the formation mechanism is discussed briefly. The electron field emission tests indicate that the turn-on field （at 10μA/cm^2） of the treated MWCNT films decreases from 2.4 V/μm to O. 79 V/μm and the field emission current is relatively stable. The enhanced field enhancement factor, increasing emission densities coming from the grown nanorods and nanoparticles, and H terminated by H plasma a11 are responsible for the enhancement of the field enhancement factor.     

Efficient Top-Emitting Polymer Light-Emitting Diodes Using Chromium as Anode

We demonstrate a high eftlciency top-emitting polymer light-emitting diode （TPLED） with chromium （Cr） taking as the anode. The TPLED structure is Cr/poly-3, 4-ethylenedioxythiophene （PEDOT：PSS）/poly [2-（4-3＇,7＇- dimethyloctyloxy）-phenyl]-p-phenylenevinylene） （P-PP V） /Ba/Ag. The Cr （ 100 nm） anode is prepared by sputterdepositing in a vacuum chamber. It is found that the device emissive properties are affected dramatically by the thickness of both PEDOT：PSS and the Ag cathode. Optimized thicknesses of PEDOT：PSS and Ag layer are 60nm and 15nm, respectively. The diode exhibits excellent electroluminescence （EL） properties, such as a turn-on voltage of 3.32 V, luminous eftlciency of 4.41 cd/A and luminance of 6989cd/m^2 at driving voltage of about 9 V.     

Quantum Overloading Cryptography Using Single-Photon Nonlocality

Using the single-photon nonlocality, we propose a quantum novel overloading cryptography scheme, in which a single photon carries two bits information in one-way quantum channel. Two commutative modes of the single photon, the polarization mode and the spatial mode, are used to encode secret information. Strict time windows are set to detect the impersonation attack. The spatial mode which denotes the existence of photons is noncommutative with the phase of the photon, so that our scheme is secure against photon-number-splitting attack. Our protocol may be secure against individual attack.     

丰中子区幻数N=28消失的相对论平均场证明

提出了一种从理论上检验壳效应的方法. 即在考虑了BCS近似的相对论平均场理论框架内, 通过计算粒子数的涨落, 发现涨落的大小和核的壳结构有紧密的关系, 由此从理论上证明了在滴线附近的丰中子区, 传统幻数N=28已经消失.     

Realization of Arbitrary Inverse Unitary Transformation of Single Mode Fibre by Using Three Wave Plates

We report a method to realize the arbitrary inverse unitary transformation imposed by a single-mode fibre on photon＇s polarization by the succession of two quarter-wave plates and a half-wave plate. The process of realization is analysed on a Poincar6 sphere due to the fact that unitary transformation does not change the angle formed by polarization state vector. The method is meaningful in quantum communication experiment such as quantum teleportation, in which an unknown arbitrary quantum state should be kept to be unchanged in the case of using a single-mode fibre for time delay.[第一段]     

First principle study of nitrogen vacancy in aluminium nitride

In the framework of density functional theory, using the plane-wave pseudopotential method, the nitrogen vacancy （VN） in both wurtzite and zinc-blende AlN is studied by the supercell approach. The atom configuration, density of states, and formation energies of various charge states are calculated. Two defect states are introduced by the defect, which are a doubly occupied single state above the valance band maximum （VBM） and a singly occupied triple state below the conduction band minimum （CBM） for wurtzite AlN and above the CBM for zinc-blende AlN. So VN acts as a deep donor in wurtzite AlN and a shallow donor in zinc-blende AlN. A thermodynamic transition level E（3＋/＋） with very low formation energy appears at 0.7 and 0,6eV above the VBM in wurtzite and zinc-blende structure respectively, which may have a wide shift to the low energy side if atoms surrounding the defect are not fully relaxed. Several other transition levels appear in the upper part of the bandgap. The number of these levels decreases with the structure relaxation. However, these levels are unimportant to AlN properties because of their high formation energy.     

一道截面问题的解法探究

以一道高考模拟题的解法探究为载体,由点带面,总结处理截面问题的思路方法.