一种干涉高光谱图像的3DSPIHT结合ROI压缩算法

 针对大孔径静态干涉成像光谱仪的成像特点,提出了一种基于三维小波变换的3DSPIHT算法结合ROI的图像压缩方案.对干涉高光谱图像序列进行了三维非对称离散小波变换.采用ROI方法对主要的光谱系数进行提升,以保护光谱信息.最后,对3DSPIHT算法进行改进,以有效编码干涉高光谱图像的小波变换系数.实验结果表明,该方法在8:1压缩比下可获得大于40 dB的峰值信噪比,同时有效地保护了光谱信息.     

X光照相技术应用于果冻内爆实验的研究

果冻内爆实验是一种研究柱形汇聚条件下Rayleigh-Taylor不稳定性的实验方法,由于高速摄影图像不能分辨反弹阶段果冻内界面的扰动,因此采用中低能X光照相CCD相机接收技术开展果冻与气体混合区域的实验研究,获得了果冻环在不同时刻压缩、反弹的发展状况及其内外边界,并观测到果冻质量分数降低时果冻与气体混合界面的变化。实验结果表明:X光照相可作为测量湍流混合区域的半定量测试技术,有助于研究果冻内爆中的气液界面Rayleigh-Taylor不稳定性现象。     

High temperature thermoelectric properties of highly c-axis oriented Bi₂Sr₂Co₂O_y thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co2Oy thin films prepared by pulsed laser deposition on LaAlO3(001).Both the electric resistivity ρ and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m·Ω· cm and 202 μV/K at 980 K,resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples.A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature.The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application in high temperature thin film thermoelectric devices.     

Improved efficiency droop characteristics in an InGaN/GaN light-emitting diode with a novel designed last barrier structure

<正>In this study,the characteristics of nitride-based light-emitting diodes with different last barrier structures are analysed numerically.The energy band diagrams,electrostatic field near the last quantum barrier,carrier concentration in the quantum well,internal quantum efficiency,and light output power are systematically investigated.The simulation results show that the efficiency droop is markedly improved and the output power is greatly enhanced when the conventional GaN last barrier is replaced by an AlGaN barrier with Al composition graded linearly from 0 to 15% in the growth direction.These improvements are attributed to enhanced efficiencies of electron confinement and hole injection caused by the lower polarization effect at the last-barrier/electron blocking layer interface when the graded Al composition last barrier is used.     

一种基于区域特性的红外与可见光图像融合算法

提出了一种基于区域分割和à trous小波变换的红外与可见光图像融合算法.首先,对红外与可见光图像进行区域分割及区域关联,并按关联映射图所划分区域提取红外与可见光图像的的能量信息及梯度信息;然后,对红外与可见光图像进行多尺度à trous小波变换分解,分解后的低频部分按照文中所提出的区域能量比和区域清晰比指标进行区域融合,高频部分采用绝对值取大算子进行融合;最后进行重构得到融合图像.结果表明,该算法既可保持可见光图像的光谱信息,又可有效获取红外图像的热目标信息.     

Tb2AlFe16-xMnx化合物的结构、磁性及正电子湮没谱研究

通过X射线衍射、磁测量及正电子湮没谱等手段研究了Tb₂AlFe_16-xMn_x（x=1—8）化合物的结构和磁性.X射线衍射研究结果表明Tb₂AlFe_16-xMn_x化合物具有六角相的Th₂Ni₁₇型结构.室温下的正电子湮没实验研究表明,Mn对Fe的替代导致化合物中的铁磁相互作用减弱,并且化合物中存在着较强烈的磁弹耦合效应.磁测量研究结果表明,Mn的替代导致Tb₂AlFe_16-xMn_x化合物的居里温度及自发磁化强度急剧下降. 关键词： 2AlFe_16-xMn_x化合物')" href="#">Tb₂AlFe_16-xMn_x化合物 磁弹耦合效应 居里温度     

Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005

Photoluminescence of GaAs0.973Sb0.022N0.005 is investigated at different temperatures and pressures. Both the alloy band edge and the N-related emissions, which show different temperature and pressure dependences, are observed. The pressure coefficients obtained in the pressure range 0-1.4GPa for the band edge and N-related emissions are 67 and 45meV/GPa, respectively. The N-related emissions shift to a higher energy in the lower pressure range and then begin to redshift at about 8.5GPa. This redshift is possibly caused by the increase of the X-valley component in the N-related states with increasing pressure.     

多层纳米薄膜结构热物性重构

基于谐波探测技术测量材料导热系数和热扩散系数的基本原理,给出3ω法用于多层纳米薄膜结构热物性实验表征的方法.考虑了层间接触热阻的作用,在频域内定义了热阻抗的概念.理论分析了各层纳米薄膜的导热系数、热扩散系数等热参数对加热膜温度波动影响的敏感性.将敏感系数与实验数据处理相结合,利用三次谐波的实部和虚部分量测量了ZrO2/SiO2增透膜多层膜结构中各层的导热系数和热扩散系数.该方法可用来有效表征其他微纳米结构的热性能.     

基于中值滤波和提升小波分析的图像去噪方法研究

针对现有算法大多对单一高斯噪声或脉冲噪声进行图像滤波的问题,在对二维图像平滑去噪的过程中,采用基于中值滤波和提升小波变换相结合的图像去噪方法。在中值滤波基础上,构造基于脉冲检测的中值滤波器,找出混合噪声中脉冲噪声并进行滤波;与此同时,对原始小波进行提升,构造提升小波,然后采用提升小波阈值去噪方法抑制高斯噪声。实验结果表明:采用本文方法,混合噪声得到有效抑制,去噪效果好。     

Enhancement of upconversion luminescence of YAlO3:Er3+ by Gd3+ doping

The upconversion luminescences of YAlO3:Er3+ phosphor co-doping with different Gd3+ concentrations are investigated under the excitation of 980- and 532-nm diode lasers. A near ultraviolet upconversion emission at 410 nm is observed in YAlO3 under 532-nm excitation. Moreover, the inactive Gd3+ ions can improve the upconversion intensity efficiently in a certain range of concentration. Under 980-nm excitation, the visible upconversion emissions at 546 and 646 nm are enhanced by about 10 and 8 times at the Gd3+ concentration of 40%, respectively. The upconversion emission at 410 nm under 532-nm excitation is also enhanced by 7 times. The substitution of Gd3+ ions for Y3+ sites changes the local symmetry of Er3+, leading to the improvement of upconversion efficiency.