差分电化学质谱方法（DEMS）的回顾：Ⅰ.DEMS原理和发展

差分电化学质谱是将电化学和质谱技术相结合而发展起来的一种现代榻化学现场测试手段，它可现场检测电化学反应中的挥发气体产物及动力学参数，中间体及其结构的性质等。     

非平衡磁控溅射技术的应用与发展

溅射沉积是真空镀膜技术中最重要的方法之一，广泛应用于微电子、光学薄膜和材料表面处理中。溅射沉积是在真空环境下，利用荷能离子轰击材料表面，使被轰击出的粒子沉积在基体表面的技术。它包括二级溅射、平衡磁控溅射和非平衡磁控溅射等。二级溅射是所有溅射技术的基础，二级溅射结构简单，但是要求工作气压高（〉1Pa），还存在基体温升高和沉积速率低等缺点，限制了它在工业生产中的应有。磁控溅射是在二级溅射基础上发展而来的，需要解决二级溅射和蒸镀镀膜速率慢、等离子体的离化率低和基体温升高的问题。     

奥扎格雷的晶体结构和酸碱性质

通过单晶X射线衍射测定了奥扎格雷的晶体结构. 晶体属正交晶系, 空间群为P212121, 晶胞参数为a=0.62522(6) nm, b=0.91897(8) nm, c=1.95789(18) nm, V=1.12492(18) nm3, Z=4. 通过紫外光谱和荧光光谱pH滴定研究了其基态和激发态酸碱性质, 测定了奥扎格雷的基态和激发态酸式电离常数. 结果表明奥扎格雷是一个pH诱导的荧光分子开关.     

椭圆方程的变换群与变分恒等式

讨论了椭圆方程的变换群与变分恒等式的关系,利用变分对称群的性质得到一类变分恒等式.通过计算变分对称群得到了寻找非星形区域方法并举例进行了说明.     

基于点缺陷扩散理论与离散位错动力学耦合的位错攀移模型研究

位错的攀移运动对高温下晶体材料的塑性行为有重要影响,为了能够有效揭示攀移的物理本质及其对塑性行为的作用,本文基于点缺陷扩散理论,通过将体扩散和管扩散机理的共同作用与三维离散位错动力学耦合,建立了适用条件更广的位错攀移模型. 利用此模型我们模拟了单个及多个棱柱型位错环的收缩变形过程,发现影响位错攀移速率的决定因素不是传统理论认为的机械攀移力,而是位错周围(体扩散)及位错段上(管扩散)的空位浓度梯度. 该模型也能够完全重现棱柱型位错环群的粗化过程中不同位错环半径及晶体内平均空位浓度随时间变化的三个阶段. 关键词： 位错攀移 点缺陷扩散理论 位错动力学 棱柱位错环     

High-order harmonic generation with a two-color laser pulse

We theoretically investigate the electron dynamics of the high-order harmonics generation process by combining a near-infrared 800 nm driving pulse with a mid-infrared 2000 nm control field. We also investigate the emission time of harmonics using time-frequency analysis to illustrate the physical mechanisms of high-order harmonic generation. We calculate the ionization rate using the Ammosov-Delone-Krainov model and interpret the variations in harmonic intensity for different control field strengths and delays. We find that the width of the harmonic plateau can be extended when the control electric field is added, and a supercontinuum from 198 to 435 eV is generated, from which an isolated 61-as pulse can be directly obtained.     

频域有限元计算的扩展面向目标误差估计

研究了针对频域有限元直接动态分析的面向目标误差估计以及误差范围估计计算方法．面向目标的误差估计方法就是专门针对如何准确和经济地估算特定值误差的一种方法,利用原问题的共轭偶问题进行计算．频域有限元的直接动态分析是模拟频域扫描实验的一种计算方法,专门针对谐振激励的线性动态响应问题,利用将原自由度分解为实部和虚部描述频率的变化,从而计算变形体的动态响应．利用扩展针对有限元的面向目标误差估计的自由度,将该方法应用到直接动态分析中进行误差估计．通过建立同时包含实部和虚部自由度的能量弱形式及偶问题,并将其数值实现,估算频域直接动态分析有限元解的误差及误差范围,并通过悬臂梁的激振算例进行了验证．     

Goal-oriented error estimation applied to direct solution of steady-state analysis with frequency-domain finite element method

Based on the concept of the constitutive relation error along with the residuals of both the origin and the dual problems,a goal-oriented error estimation method with extended degrees of freedom is developed.It leads to the high quality local error bounds in the problem of the direct-solution steady-state dynamic analysis with a frequency-domain finite element,which involves the enrichments with plural variable basis functions.The solution of the steady-state dynamic procedure calculates the harmonic response directly in terms of the physical degrees of freedom in the model,which uses the mass,damping,and stiffness matrices of the system.A three-dimensional finite element example is carried out to illustrate the computational procedures.     

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

In this letter,the Ta/HfO_x/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO_x/BN bilayer device compared with that for the Ta/HfO_x/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfO_x layer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO_x/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfO_x device.