多环芳烃时间分辨荧光光谱特性研究

利用时间分辨荧光光谱技术,研究了菲、荧蒽、芴、蒽、芘等五种多环芳烃的荧光时间分辨发射光谱特性。以289 nm受激拉曼光作为激发光源,研究了289 nm激发光作用下五种多环芳烃的延时特性和门宽特性。并以多环芳烃随延时时间的荧光峰强度衰减关系曲线,得到菲、荧蒽、芴、芘的荧光寿命分别为37.0, 32.7, 10.9, 147.0 ns。不同荧光物质具有特定的荧光光谱特性,多环芳烃时间分辨荧光光谱特性的研究可以为复杂水体中不同种类多环芳烃的诊断提供依据。     

在确定的热力学状态下测量气体导热系数与黏度

气体的导热系数和黏度是重要的热物性参数,其数值大小取决于所处的热力学状态。在目前的导热系数和黏度主要测量方法中,待测工质在测量时需经历非定常的过程或处于具有物性梯度的非平衡态之下,使得待测工质的物性在时间或者空间上不处于一个确定的热力学状态。本文利用圆柱定程干涉法,通过分析气体导热系数和黏度导致的声波能量耗散,结合气体输运理论中对稀疏气体的描述,探索了在确定的热力学状态下同时测量气体导热系数和黏度的方法,并以氩(Ar)为例进行了实验验证。测量结果与已有文献一致性较好,初步证实了方法的可行性。     

厚板的高阶剪切变形理论研究

已有多种厚板理论和高阶剪切变形模型,但仍需要进一步研究以更加完善.首先根据平均转角及上下表面剪应力自由这两个条件,提出了具有统一高阶剪切变形模型的中面位移模式,并将之表示为正交分解形式.根据正交特性,定义了板的广义应力;运用板问题应变能密度表示的等价性,提出了与广义应力功共轭的广义应变表示形式,建立了板的本构关系.证明了不同转角定义时虚功原理板理论表示的客观性,以及与三维弹性理论表示的等价性.运用虚功原理,建立了变分自洽的高阶厚板理论和变分渐近的低阶厚板理论,推导了相应的平衡方程及边界条件,分析了与已有板理论的异同.以广义应力形式建立了厚板理论的平衡方程,厘清了不同转角表示时板理论间的关系、低阶厚板理论与高阶厚板理论间的关系以及剪切系数计算等若干基本问题.对圣维南扭转问题的求解证明了该理论的正确性.      

叶绿素荧光技术对受Cu~(2+)胁迫藻类暗适应时间的研究

利用叶绿素荧光技术,对受相同浓度Cu2+胁迫的蛋白核小球藻、斜生栅藻、铜绿微囊藻的最佳暗适应时间进行研究.通过对三种供试藻在光照和暗适应时间分别为30s、1min、3min、5min、10min和20min条件下的光合荧光参量进行测定,以光化学淬灭参量值为主要参考依据,结合t检验方法对暗适应时间进行显著性差异分析,结果表明:暗适应条件下三种供试藻的潜在最大量子效率值略有增加,实际量子效率值基本保持不变;蛋白核小球藻和斜生栅藻的光化学淬灭参量值和非光化学淬灭参量值随暗适应时间的延长显著增加;铜绿微囊藻光化学淬灭参量值在光照1min时达到最大,无需进行暗适应,这可能与蓝藻在暗适应时发生状态转换有关;藻类不是暗适应时间越长越好,蛋白核小球藻和斜生栅藻的最佳暗适应时间分别为5min和10min.这将为采用叶绿素荧光技术进一步研究毒物对藻类的胁迫机理提供可靠依据.     

小型化望远式激光共焦扫描显微内窥镜

研制了一种激光共焦扫描显微内窥镜,采用望远式显微内窥光学系统,同时实现长距离的图像中继传输、远心f-theta光学扫描和显微内窥成像功能.二维共焦扫描由双振镜实现,低噪音扫描控制信号由嵌入式系统产生.为实现便携式应用,激光共焦扫描显微内窥镜采用小型化设计方案.首先,体内的显微内窥成像光学系统,外径尺寸为8 mm,工作长度为250.3 mm,可通过标准腹腔镜手术孔进行体内显微内窥成像;其次,采用3 mm通光孔径的小尺寸平面反射镜实现体外共焦扫描,摆动频率为100 Hz,实现快速共焦扫描;最后,激光控制和荧光探测仅通过电缆和光纤与共焦扫描显微内窥镜前端连接,减小了显微内窥镜的前端尺寸和重量.通过实验验证,本系统的成像视场为φ 600 μm,光学分辨率为2.2 μm,可采用手持式或者其他方式工作,进行体内组织的共焦扫描成像,实现微创、在体的荧光显微内窥术.     

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

约束下线性混合模型参数估计的渐近解及其收敛性

在线性不等式约束下讨论了具有相同参数的两个线性混合模型的参数估计问题,给出了一种迭代算法,得到了这类模型中参数的最小二乘估计序列及其渐近解.在此基础上,利用多元多项式方程组解的个数定理和不动点定理,证明了此估计序列是依概率1收敛的.     

F离子注入新型Al0．25Ga0．75N／GaNHEMT器件耐压分析

为了缓解AlGaN／GaNhighelectronmobilitytransistors（HEMT）器件n型GaN缓冲层高的泄漏电流,本文提出了具有氟离子注入新型Al0．25Ga0．75N／GaNHEMT器件新结构．首先分析得出n型GaN缓冲层没有受主型陷阱时,器件输出特性为欧姆特性,这样就从理论和仿真方面解释了文献生长GaN缓冲层掺杂Fe,Mg等离子的原因．利用器件输出特性分别分析了栅边缘有和没有低掺杂漏极时,氟离子分别注入源区、栅极区域和漏区的情况,得出当氟离子注入源区时,形成的受主型陷阱能有效俘获源极发射的电子而减小GaN缓冲层的泄漏电流,击穿电压达到262v通过减小GaN缓冲层体泄漏电流,提高器件击穿电压,设计具有一定输出功率新型A1GaN／GaNHEMT提供了科学依据．     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.