Diode-pumped laser performance of Tm:Sc_2SiO_5 crystal at 1971 nm

The 4-at.% Tm:Sc_2SiO_5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave(CW) laser output of(100)-cut Tm:SSO with the dimensions of 3 mm×3 mm×3 mm under laser diode(LD)-pumping is realized. The full width at half maximum(FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW.     

纳米压痕残余应力场拉曼光谱实验研究

本文采用纳米压入仪在晶向为〈111〉和〈100〉的两种单晶硅片表面压入1000nm,卸载后得到深度约为550~570nm的压痕。使用共聚焦显微拉曼光谱仪对压痕周边区域进行测量,采用场扫描成像技术得到了压痕周边拉曼频移、半高宽、峰强等拉曼信息,通过分析由频移求得残余应力场的分布。在实验的基础上讨论了残余应力场的分布,以及晶向对应力场分布的影响,近似给出了压痕边缘最大压应力与微裂纹尖端最大拉应力。对其他拉曼信息的分析表明,半高宽和峰强信息与材料晶格结构的变化相关,在一定程度上也可以反映残余应力的作用。