Structure and Wettability Engineering of Polycrystalline Diamond Films Treated by Thermally Oxidation,Second Growth and Surface Termination

High-quality polycrystalline diamond films with dominated(100)-oriented grains are realized by combining the thermally oxidation and the homogeneous second growth processes. Moreover, we investigate the wettability property of the polycrystalline diamonds in various stages. Different surface structures(with various grain sizes,voids, and orientations, etc.) and terminations(hydrogen or oxygen) have significant effects on the wettability of polycrystalline diamond films. The wettability is furthe...     

Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric

The effect of high overdrive voltage on the positive bias temperature instability(PBTI)trapping behavior is investigated for GaN metal–insulator–semiconductor high electron mobility transistor(MIS-HEMT)with LPCVD-SiNx gate dielectric.A higher overdrive voltage is more effective to accelerate the electrons trapping process,resulting in a unique trapping behavior,i.e.,a larger threshold voltage shift with a weaker time dependence and a weaker temperature dependence.Combining the degradation of electrical parameters with the frequency–conductance measurements,the unique trapping behavior is ascribed to the defect energy profile inside the gate dielectric changing with stress time,new interface/border traps with a broad distribution above the channel Fermi level are introduced by high overdrive voltage.     

Vertical GaN Shottky barrier diode with thermally stable TiN anode

Vertical GaN Schottky barrier diodes with Ti N anodes were fabricated to investigate the electrical performance. The turn-on voltage and specific on-resistance of diodes are deduced to be approximately 0.41 V and 0.98 m?·cm2, respectively.The current-voltage curves show rectifying characteristics under different temperatures from 25℃ to 200℃, implying a good thermal stability of Ti N/Ga N contact. The low-frequency noise follows a 1/f behavior due to the multiple traps and/or barrier inhomogeneous at Ti N/Ga N interface. The trapping/de-trapping between traps and Fermi level causes the slight capacitance dispersion under reverse voltage.     

稀土荧光粉Zn_2SiO_4:Mn~(2+),Er~(3+)的性能优化及显现潜在指纹的研究

指纹显现技术是痕迹学乃至物证技术学领域研究的重点内容之一,现行的指纹显现试剂和显现方法仍存在一定的隐患。以稀土荧光粉Zn2Si O4:Mn2+,Er3+为研究对象,借助纳米稀土发光材料在生物荧光检测领域的应用思路,通过表面修饰技术、湿法球磨等方法对荧光粉的发光性能、吸附能力和粒径形貌等指标进行优化与控制,使之成功地应用于潜在指纹显现中,能够显现遗留在不同客体上不同遗留时间的潜在指纹;建立了一种高效、无毒、无损、便利的潜在指纹显现技术新方法,并拓展了稀土荧光粉的应用范围。     

铁氨基黏土-葡萄糖氧化酶纳米复合催化剂的构筑及多酶级联反应研究

以铁氨基黏土(FeAC)为载体, 通过共价交联固定葡萄糖氧化酶(GO_x), 构筑了铁氨基黏土-葡萄糖氧化酶纳米复合催化剂(FeAC-GO_x). 利用FeAC的过氧化物酶活性, 与GO_x结合进行级联反应, 可催化葡萄糖转化为过氧化氢并产生显色反应; 采用扫描电子显微镜(SEM)、 X射线衍射(XRD)和傅里叶变换红外光谱(FTIR)对FeAC-GO_x进行了形貌和结构表征, 并评价了其酶动力学参数、 催化稳定性和重复使用性等. 结果表明, GO_x的固定化率可达到76.4%, 所构筑的纳米结构酶复合体系具有高效的级联催化能力. 与天然酶体系相比, FeAC-GO_x具有更优异的温度和pH耐受性, 且在重复使用6次后, 酶催化活性无明显降低. 该体系不仅为新型葡萄糖传感器的开发奠定了基础, 还为多酶级联纳米结构酶的构筑提供了新思路.     

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

In this paper, we adopted thermally stable HfO_xN_y as gate dielectric for TiN/HfO_xN_y/AlGaN/GaN heterostructure field-effect transistors(HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfO_xN_y films were dependent on oxygen flow rate in the O_2/N_2/Ar mixture sputtering ambient. The obtained metal–oxide–semiconductor heterostructure field-effect transistors by depositing HfO_2 and HfO_xN_y dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900℃, the device using HfO_xN_y dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO_2 gated one at 600℃. This result shows that the HfO_xN_y dielectric is a promising candidate for the self-aligned gate process.     

Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure

An n-GaO_x thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaO_x thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaO_x/diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaO_x as a termination structure for diamond power devices.