高压条件下高能重离子辐照材料研究进展

高能重离子辐照处于高压条件下材料的研究,是随着高能重离子加速器技术的快速发展而出现的一个新的研究领域, 研究结果涉及材料学、 地质学、地质年代学、核废料处理学等学科。简要介绍最近几年国内外在高能重离子辐照高压条件下材料研究领域的研究现状及已取得的结果,并对未来在兰州重离子加速器冷却储存环（HIRFL CSR）上开展相关研究工作的前景作了展望。With development of high energy heavy ion accelerator, it is possible to perform heavy ion irradiation experiments of pressurized materials in diamond anvil cells(DACs). It is a new research field. The results expected from irradiation experiments under high pressure will have impacts on several scientific fields such as materials science,geo science,geochronology,and nuclear waste storage. In this paper, some of recent works in this field are presented and reviewed. Furthermore,the research plan of materials under high pressure based on HIRFL-CSR is introduced.     

重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

为了提高纠错编码（ECC）的有效性,先进的静态随机存储器（SRAM）多采用位交错结构。但是,在没有物理版图信息的情况下,位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件,研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助,完善了判别MCU的基本法则。除此之外,研究结果表明,ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中,需考虑更高层次的编码算法来抵抗单粒子翻转。In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.     

石墨烯吸附钛原子的第一性原理研究

基于密度泛函理论研究了单个钛原子分别位于本征石墨烯GR、点缺陷石墨烯（包括空位石墨烯DGR和氮掺杂石墨烯N-GR）薄片表面的吸附机理。通过计算钛原子在本征石墨烯表面不同位置时的吸附结构和吸附能,发现最稳定吸附位置是碳六元环的中心;计算了各个吸附体系的吸附能、态密度和差分电荷密度,研究表明三个吸附体系碳钛间均产生了电子轨道杂化,掺氮后的石墨烯对钛原子的吸附性能略微增强,而空位石墨烯对钛的吸附能是本征石墨烯的4倍,费米能级附近电子态局域化程度最大,吸附效果最好。     

氮化碳薄膜的制备及研究现状

 氮化碳具有良好的物理、化学性质和广泛的应用前景。目前主要采用化学气相沉积法、离子束溅射法、激光等离子体沉积和激光烧蚀、离子镀、离子注入法等制备方法。文中对氮化碳的结构、性质、制备、性能表征以及研究现状进行了比较详细的介绍。     

150keV Ar离子辐照非晶态合金表面发泡和溅射形貌研究

150keV Ar离子辐照非晶态合金Fe₃₉Ni₃₉Mo₂Si₁₂B₈、Fe₄₀Ni₄₀Si₁₂B₈、Fe₃₉Ni₃₉V₂Si₁₂B₈、Fe₇₇Cr₂Si₅B₁₆和Fe₇₈Si₁₀B₁₂,用扫描电子显微镜(SEM)观测研究了表面损伤形貌剂量变化的过程.低剂量时表面发泡形成.发泡随剂量增加受到溅射腐蚀,表面形成坑洞或针孔,针孔密度随剂量增加而增加,高剂量时,表面损伤以溅射为主,溅射对表面的腐蚀导致多孔粗糙的表面损伤结构建立,并且这些结构与靶材料有着密切的关系.     

重离子径迹模板法合成银纳米线

聚碳酸脂(PC)膜被高能重离子辐照后沿入射离子路径产生潜径迹, 把带有潜径迹的膜经紫外光敏化后置于NaOH 溶液中进行蚀刻, 通过选择蚀刻条件, 在PC 膜内得到直径从100 到500 nm 导通的核径迹孔. 以带有核径迹孔的PC 膜为模板, 用电化学沉积法制备出不同直径的银纳米线. 在特定的实验条件下(沉积电压25mV、电流密度1-2 mA·cm-2、温度50 益和电解液为0.1 mol·L-1的AgNO3溶液), 获得了沿[111]方向择优取向生长的具有单晶结构的银纳米线. 利用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)及选区电子衍射(SAED)等手段对银纳米线的形貌和晶体结构特征进行了表征.     

深亚微米SRAM质子单粒子翻转实验研究

宇航半导体器件运行在一个复杂的空间辐射环境中,质子是空间辐射环境中粒子的重要组成部分,因而质子在半导体器件中导致的辐射效应一直受到国内外的关注。利用兰州重离子加速器(Heavy Ion Research Facility In Lanzhou) 加速出的H2 分子打靶产生能量为10 MeV 的质子,研究了特征尺寸为0.5/0.35/0.15 μm体硅和绝缘体上硅(SOI) 工艺静态随机存储器(SRAM) 的质子单粒子翻转敏感性,这也是首次在该装置上开展的质子单粒子翻转实验研究。实验结果表明特征尺寸为亚微米的SOI 工艺SRAM器件对质子单粒子翻转不敏感,但随着器件特征尺寸的减小和工作电压的降低,SOI 工艺SRAM器件对质子单粒子翻转越来越敏感;特征尺寸为深亚微米的体硅工艺SRAM器件单粒子翻转截面随入射质子能量变化明显,存在发生翻转的质子能量阈值,CREME-MC模拟结果表明质子在深亚微米的体硅工艺SRAM器件中通过质子核反应导致单粒子翻转。Microelectronic devices are used in a harsh radiation environment for space missions. Among all the reliability issues concerned, proton induced single event upset (SEU) is becoming more and more noticeable for semiconductor components exposed on space. In this work, an experimental research of SEU induced by 10 MeV proton for static random access memory (SRAM) of 0.5, 0.35 and 0.15 m feature size is carried out on HeavyIon Research Facility in Lanzhou for the rst time. The experimental results show that proton induced SEUs in submicron and deep-submicron (SRAMs) are dominated by secondary ions generated by proton nuclear reaction events. The silicon-on-insulator SRAMs characters natural radiation-hardened SEU by proton. For the deep-submicron bulk-silicon technology SRAM, the proton SEU cross section is closely related to the proton energy and there is a threshold energy for the SEU occurrence by proton indirect ionization. CREME-MC simulation indicates that the SEU events in deep-submicron SRAM are induced by the proton nuclear reaction.     

Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell

This paper presents a simulation study of the impact of energy straggle on a proton-induced single event upset(SEU)test in a commercial 65-nm static random access memory cell. The simulation results indicate that the SEU cross sections for low energy protons are significantly underestimated due to the use of degraders in the SEU test. In contrast, using degraders in a high energy proton test may cause the overestimation of the SEU cross sections. The results are confirmed by the experimental data and the impact of energy straggle on the SEU cross section needs to be taken into account when conducting a proton-induced SEU test in a nanodevice using degraders.     

高能Ar离子辐照PET引起的光吸收变化研究

采用紫外–可见光吸收技术分析和研究了35MeV/uAr离子辐照聚酯膜引起的光吸收改性.结果表明,Ar离子轰击聚酯膜时引起了碳键的共轭体系形成,从而导致了紫外–可见光区域中光吸收明显增加,光吸收增加的幅度依赖于离子的照射剂量、离子在样品中的平均电子能量损失以及光的波长,剂量越高,电子能损越大,光吸收增幅越大;而光的波长越长,光吸收的增加则越不明显.利用测量到的光吸收曲线,同时还定量地研究了各种辐照条件下聚酯膜的光能隙和碳原子团的尺寸.     

红外光吸收研究35MeV/u Ar离子辐照半晶质聚酯膜引起的效应

35MeV/u Ar离子在室温下辐照了多层堆叠的半晶质聚酯膜,采用傅立叶转换的红外光吸收技术分析和研究了由辐照引起的化学键断裂及其对离子剂量、离子在样品中的平均电子能量损失和吸收剂量的依赖性.结果表明,辐照导致聚酯膜中发生了明显的化学键断裂,断键过程主要发生在反式构型的乙二醇残留物和苯环的对位上,苯环的基本结构在辐照中变化较小.断键不仅强烈地依赖于离子的照射剂量,而且还跟样品中电子能量沉积密切相关,明显的断键发生在4.0MGy以上的吸收剂量.