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71.
Preparation of Ultra Low- k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition 下载免费PDF全文
An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86×10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96×10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing. 相似文献
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The preparation of conducting PPQ film was first reported in the previous paper. It is very interesting that this film is highly sensitive to moisture in air. The hydration and dehydration of the film are accompanied by change not only in color but also in conductivity and UV-visible spectrum. The conducting PPQ is reduced to PPQ and loses its conductivity after being soaked in water. 相似文献
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