MgO掺杂LKNN无铅压电陶瓷的致密化烧结

本文采用传统烧结法成功制备了MgO掺杂的Li0.06(K0.5Na0.5)0.94NbO3+xMgO(LKNNMx)陶瓷,研究了烧结温度和MgO掺杂量对LKNNMx陶瓷结构与性能的影响。结果表明:MgO掺杂有效地促进了陶瓷的烧结,随MgO掺杂量的增加,LKNNMx陶瓷的致密化烧结温度大幅度降低。当MgO掺杂量为0.1%时,在1060℃烧结制备的陶瓷样品,其相对密度达到90%;当MgO掺杂量增加到1.5%时,在1000℃烧结制备的陶瓷样品,其相对密度高于92%,并保持了较好的压电性能。     

Novel high-voltage power device based on self-adaptive interface charge

This paper presents a novel high-voltage lateral double diffused metal--oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E_I) and increase breakdown voltage (BV). The BV and E_I of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on E_I are defined and analysed.     

含尺度效应的功能梯度三明治微梁振动、弯曲与屈曲特性研究

基于修正的应变梯度理论和精化的高阶剪切变形理论,提出了一种含尺度效应的功能梯度三明治微梁模型。功能梯度材料的等效弹性参数由Mori-Tanaka均匀化方法描述。针对微梁的高阶边值问题,融合微分求积和Gauss-Lobatto求积准则,建立了一种2节点18自由度的微分求积有限元。通过对比性研究,验证了理论及数值模型的有效性。最后,讨论了边界条件、材料尺度参数、功能梯度指数、长细比、各层厚度比等对功能梯度三明治微梁静动态特性的影响。结果表明,功能梯度三明治微梁的静力响应、振动频率、屈曲荷载以及模态均呈现出显著的尺度效应,所得结果有望为微机电系统中承载器件的设计提供数据积累和方法依据。     

非均匀沟道MOS辐照正空间电荷迁移率模型

提出非均匀沟道MOS辐照正空间电荷迁移率模型.借助镜像法导出沟道电离杂质与辐照正空间电荷的二维场和二维互作用势的分布，由此给出非均匀n沟和p沟的迁移率表示式，其解析解与二维仿真值十分吻合.还借助二维仿真器计算均匀沟道MOS辐照正空间电荷迁移率的变化值，其值和文献［2，3］实验数据一致. 关键词： 非均匀沟道MOS 镜像法 二维互作用势     

二维光子晶体波导与单模平面介质波导间的喇叭波导接头

提出并优化了用于二维介质柱光子晶体波导与单模平面介质波导对接的基于分布布拉格反射波导的喇叭波导接头，提高了这两种波导之间的传输效率.二维时域有限差分仿真结果表明，在大部分光子晶体波导导模的频谱范围内，传输效率高于98％.传输效率最高可以达到99.85％. 关键词： 光子晶体波导 平面介质波导 时域有限差分     

High dV/dt immunity MOS controlled thyristor using a double variable lateral doping technique for capacitor discharge applications

An analysis model of the dV/dt capability for a metal-oxide-semiconductor （MOS） controlled thyristor （MCT） is developed. It is shown that, in addition to the P-well resistance reported previously, the existence of the OFF-FET channel resistance in the MCT may degrade the dV/dt capability. Lower P-well and N-well dosages in the MCT are useful in getting a lower threshold voltage of OFF-FET and then a higher dV/dt immunity. However, both dosages are restricted by the requirements for the blocking property and the forward conduction capability. Thus, a double variable lateral doping （DVLD） technique is proposed to realize a high dV/dt immunity without any sacrifice in other properties. The accuracy of the developed model is verified by comparing the obtained results with those from simulations. In addition, this DVLD MCT features mask-saving compared with the conventional MCT fabrication process. The excellent device performance, coupled with the simple fabrication, makes the proposed DVLP MCT a promising candidate for capacitor discharge applications.     

Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer

A novel silicon-on-insulator (SOI) high-voltage device based on epitaxy-separation by implantation oxygen (SIMOX) with a partial buried n⁺-layer silicon-on-insulator (PBN SOI) is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumulated on the interface between top silicon layer and buried oxide layer (BOX) effectively enhance the electric field of the BOX (E_I), resulting in a high breakdown voltage (BV) for the device. For the same thicknesses of top silicon layer (10 μm) and BOX (0.375 upmum), the E_I and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.     

Lorentz序列空间的装球问题

Ｂａｎａｃｈ空间中装球问题的研究，近四十年来已取得了令人瞩目的发展。Ｂａｎａｃｈ空间的装球值的范围已经确定，Ｌ＿ｐ空间及Ｏｒｌｉｃｚ序列空间Ｉ＿Ｍ等许多经典Ｂａｎａｃｈ空间装球值已经找到．本文研究又一类经典Ｂａｎａｃｈ空间──Ｌｏｒｅｎｔｚ序列空间的装球问题，给出了Ｌｏｒｅｎｔｚ序列空间的装球值。     

On Weak Riemann-Stieltjes Integration of Abstract Function Valued in Locally Convex Topological Algebra

Let A be a locally convex topological algebra.We denote by F the set of allnon-zero multiplicative linear continuous functionals on A and WF the weak topologyon A determined by F. Definition 1 Let x(t),y,(t)be abstract functions mapping closed interval[a,b]to A.Given a severation λ:Let     

基于LSSVM的电子装备故障预测研究

针对电子装备的故障信息不足,故障发生率高等特点,通过故障预测有效的监测设备故障状态以及发展趋势,实现对设备的事先维修,避免重大事故的发生,提高电子设备的安全性。对电子装备故障预测进行了分析,提出了一种基于最小二乘支持向量机（LSSVM）的故障预测方法。首先介绍了LSSVM故障预测算法的基本原理和预测流程;然后,对整个电子装备的故障预测研究可以从一个类似的模拟带通滤波器电路故障预测研究出发,将该元件容差设为不同范围来定义电路的不同故障状态,将LSSVM方法与最小二乘法、支持向量机法对电路的不同状态进行预测,可以得到不同状态的预测值,研究结果表明提出的方法能够实现模拟电路的缓变故障预测,且预测效果较好。