A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.     

轧带的润滑力学分析

本文耦合了流体动力润滑理论,经典轧制理论及弹性接触变形理论,并计入了润滑油的压粘效应和轧制材料的硬化效应等因素,运用有限元法和边界元法等计算方法,分别得到了刚性轧辊下的理论解、弹性轧辊下的Boussinesq解及边界元解,预示了轧带工作区的压力、剪应力以及膜厚的分布规律,确定了最小油膜厚度,并对计算结果与实验结果进行了比较。     

马尔可夫链在冗余系统可靠度求解中的应用

求解了单支光纤陀螺失效率取不同值时系统可靠度随时间的变化曲线,并分析了冗余系统可靠度曲线的意义,为光纤陀螺惯性测量冗余系统的可靠性研究提供了重要的信息,并为冗余系统的费效比计算提供了可信的依据。对组成系统的器件进行冗余是提高系统可靠性的一种常用方法,定量研究复杂冗余系统的冗余关系和求解系统的可靠度是极其困难的,马尔可夫模型是一种有效的方法。分析和确定了一个复杂的光纤陀螺惯性测量冗余系统的冗余关系,介绍了马尔可夫模型的基本原理,讨论了冗余系统应用马尔可夫模型的条件,应用马尔可夫模型建立了冗余系统的状态转移图和状态转移矩阵,最后给出了冗余系统可靠度的解析表达式,定量求解了冗余系统的可靠度。     

A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.     

A low specific on-resistance SOI LDMOS with a novel junction field plate

A low specific on-resistance SO1 LDMOS with a novel junction field plate （JFP） is proposed and investigated theo- retically. The most significant feature of the JFP LDMOS is a PP-N junction field plate instead of a metal field plate. The unique structure not only yields charge compensation between the JFP and the drift region, but also modulates the surface electric field. In addition, a trench gate extends to the buffed oxide layer （BOX） and thus widens the vertical conduction area. As a result, the breakdown voltage （BV） is improved and the specific on-resistance （Ron,sp） is decreased significantly. It is demonstrated that the BV of 306 V and the Ron,sp of 7.43 mΩ.cm2 are obtained for the JFP LDMOS. Compared with those of the conventional LDMOS with the same dimensional parameters, the BV is improved by 34.8%, and the Ron,sp is decreased by 56.6% simultaneously. The proposed JFP LDMOS exhibits significant superiority in terms of the trade-off between BV and Ron,sp. The novel JFP technique offers an alternative technique to achieve high blocking voltage and large current capacity for power devices.     

贵金属纳米颗粒复合薄膜光学特性理论研究

采用经典Mie理论模拟计算了Ag、Au和Cu系纳米颗粒复合薄膜的吸收光谱。所有复合薄膜的吸收光谱均在可见光范围内出现表面等离子共振(surface plasmon resonance,SPR)吸收峰。Ag、Au和Cu系复合薄膜的SPR吸收峰峰位和峰强与金属介电常数实部(ε_m1)和虚部(ε_m2)及介质折射率(refractive index,n_s)之间存在强相关性,相比于ε_m1和ε_m2,n_s的增大主导SPR吸收峰向长波方向移动且强度增强。通过改变金属和介质种类可以调节Ag、Au和Cu系复合薄膜的SPR吸收峰峰位和峰强,从而调节其光吸收特性。根据n_s可以推测出金属纳米颗粒复合薄膜在可见光范围内的SPR吸收峰峰位。理论模拟吸收光谱与前人实验结果吻合,SPR吸收峰峰位的理论值与文献实验值接近。     

氢氧化钠水溶液体系中金属铬的电化学氧化过程

铬铁电氧化溶出技术是一种全新的制备铬酸钠的方法,具有反应条件温和、过程可控、工艺环保等优点,然而金属铬在NaOH水溶液中的电化学氧化过程尚不明确. 本文采用循环伏安法（CV）和阳极极化法（LSV）对金属铬在NaOH水溶液中的电化学氧化过程进行研究. 使用EDS、SEM、XRD和XPS对电解前后的金属铬表征,判断中间物的产生,使用紫外可见分光光度计验证电解液中生成了铬酸钠. 结果表明,金属铬和中间产物Cr(OH)₃可能依次发生电化学氧化直接生成Na₂CrO₄,阳极极化为金属铬的活化. 随着NaOH溶液浓度的增加,Cr(OH)₃和Na₂CrO₄的生成量在增加,金属铬电化学氧化制备铬酸钠的适宜条件为碱浓度≥ 2 mol·L^-1,阳极电势≥ 1.6 V（vs. SCE）.     

含尺度效应的功能梯度三明治微梁振动、弯曲与屈曲特性研究

基于修正的应变梯度理论和精化的高阶剪切变形理论,提出了一种含尺度效应的功能梯度三明治微梁模型。功能梯度材料的等效弹性参数由Mori-Tanaka均匀化方法描述。针对微梁的高阶边值问题,融合微分求积和Gauss-Lobatto求积准则,建立了一种2节点18自由度的微分求积有限元。通过对比性研究,验证了理论及数值模型的有效性。最后,讨论了边界条件、材料尺度参数、功能梯度指数、长细比、各层厚度比等对功能梯度三明治微梁静动态特性的影响。结果表明,功能梯度三明治微梁的静力响应、振动频率、屈曲荷载以及模态均呈现出显著的尺度效应,所得结果有望为微机电系统中承载器件的设计提供数据积累和方法依据。     

基于互联网+和人工智能技术的吸毒人员公共卫生管理模式研究

文章围绕当前吸毒人员康复过程中存在的问题和不足,提出依托互联网+技术沟通整合政府、家庭和社工等多领域多部门资源,利用人工智能(AI)和区块链技术实现吸毒人员情绪辨识和戒断康复证据链的构建,实现风险预警,减少和降低复吸.该管理模式打破吸毒人员常规司法强制性干预的理念,将吸毒人员需求作为管理的核心,部署相关服务和支持资源,为吸毒人员培养康复信心回归社会提供了新的思路.