RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION*

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell,were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of thepreparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. Therectifying parameters of Al/PS-PANI/Au cell were determined to be γ= 1 .8×10~1～ 1 .0×10~5 for the rectifyingratio at 3V, n = 3 ～12 for the ideal factor,j_0 = 8.0×10~(-5)～5.6×10~(-2) mA/cm~2 for the reversed saturated currentdensity, and φ_b = 0.67～ 0.83 V for the barrier height, respectively. The best rectifying heterojunction diodemade between PANI and n-type PS with higher rectifying factor (γ= 1 .0×10~5 at 3V ), output current (>1500mA/cm~2 at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS beforeevaporating Al electrode.     

催化裂化反应对1-己烯叠合反应的影响规律

分别以1,3,5-三异丙苯和正辛烷为不同分子尺寸催化裂解原料,以1-己烯为叠合原料,评估了合成的多级孔ZSM-5分子筛催化剂上催化裂化反应和烯烃叠合反应的耦合机制.模型化合物催化裂解反应结果表明,在合成的多级孔ZSM-5分子筛上不同尺寸分子裂解性能受到抑制,1,3,5-TIPB裂解能力下降,正辛烷裂解初始转化率由70％...     

FREE STANDING FILM OF POLYANILINE

A free standing film of polyaniline as large as 18 cm×18cm×0.002 cm can be obtained by evaporation of a solution of the chemically synthesized base in NMP. Its structure was examined by the elemental analysis, IR, U.V.-visible spectra, XPS, DSC, SEM and X-ray scattering and its conducting behavior as well as electrochemical properties were studied. Results show that the composition, structure of main chain, physical properties of the free standing film of polyanilme is similar to that of the powder. However, some differences in its electronic structure, conductivity at room temperature and potential of redox couple between the flee standing film and powder are observed, which may be due to cross-linking of the film of polyaniline.     

PHOTO-INDUCED DOPED POLYANILINE BY THE VINYLIDENE CHLORIDE AND METHYL ACRYLATE COPOLYMER AS PHOTO ACID GENERATOR

The emeraldine base form of polyaniline (PANI) can be doped by a photo-induceddoping method. In this method a copolymer of vinylidene chloride and methyl acrylate(VCMAC) was used as photo acid generator which can release proton when it is exposedto ultraviolet light (λ= 254 nm). The structure of PANI-VCMAC system before and afterirradiation was characterized by elemental analysis, IR, XPS, and SEM images. Resultsobtained indicate that the photo-induced doping characteristics, such as doping positionand type of charge carriers, are similar to that of PANI doped with HCl. The poor room-temperature conductivity (～10~(-5)S/cm) of PANI-VCMAC system after irradiation maybe due to low doping degree (～pH= 3) and the difference in morphology as compared withPANI-HCl film.     

以PBL法进行药学实验基本技能教学的探索与实践*

根据西部少数民族地区院校的客观条件和教学特点,提出用以问题为导向的教学法(PBL)进行药学基本技能实验教学。实践证明,实验组(PBL法)的实践基本技能操作水平和发现、分析并解决问题的能力均显著高于对照组(传统教学法)。该法对提高西部少数民族地区药学本科生的创新能力具有较大意义,对其他地区药学本科生创新能力的培养也有一定的借鉴作用。     

一种共轭结构三苯胺衍生物的制备及光学性质

通过固相Wittig反应合成了一种π共轭结构有机荧光化合物。其结构经¹HNMR、¹³CNMR、IR及ESI-MS表征。通过实验研究了化合物的UV-Vis和荧光光谱并采用理论计算进行了光谱机理解释。目标化合物在二氯甲烷、乙酸乙酯、乙醇、乙腈和N, N-二甲基甲酰胺中的最大吸收波长λ_max均位于310 和380 nm处,在上述溶剂中的最强荧光发射波长λ_em分别为438、436、439、448和451 nm。      

碳酸钠介导的芳亚甲基丙二腈和α-氟代酮的环丙烷化反应合成多取代环丙烷

碳酸钠作为一种非氮族碱,能高效促进芳亚甲基丙二腈和α-氟代酮的环丙烷化反应。在以碳酸钠为碱,1,4-二氧六环为溶剂,80℃条件下,反应能以62%～83%的产率合成顺式多取代环丙烷化合物。目标化合物的结构经¹H NMR,¹³C NMR和MS确证。该方法具有反应条件温和,产率高和立体选择性高等特点。     

f7/2原子核的壳楱型计算

本文采用纯组态壳模型和从实验数据抽取的两体有效剩余相互作用,对于407/2)ⁿ 模型对于质量数在40到56之间的很多原子核的低伏态和高角动量态,是一种好的近似.但也存在着一些矛盾,表现了模型的局限性.     

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline (PANI) derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. Of the film, the side with being irradiated by UV light during preparation is represented as `A side'; the other side without being irradiated is represented as `N side'. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the {current--voltage} characteristic curves with the values of rectifying ratio (γ) being 20 at ±0.06 V at T= 77K and 4 at ±0.02V at T=300 K separately.