Keggin型铁取代杂多阴离子PW_(11)O_(39)Fe(Ⅲ)(H_2O)~(4-)光催化降解硝基苯

以Keggin型铁取代杂多阴离子PW11O39Fe(Ⅲ)(H2O)4-[PW11Fe(Ⅲ)(H2O)]代替传统光芬顿方法中的Fe3+作为光催化剂,构成一个新颖的光催化体系并用于水体生物难降解有机污染物硝基苯(NB)的降解.详细研究了在紫外光照射和H2O2存在下,PW11Fe(Ⅲ)(H2O)对NB降解的均相光催化作用.考察了NB初始浓度、溶液pH、H2O2和PW11Fe(Ⅲ)(H2O)浓度对光催化降解反应速率的影响.实验结果表明,1.0mmol·L-1PW11Fe(Ⅲ)(H2O)+5.0mmol·L-1H2O2+1.0mmol·L-1NB的中性溶液在300W汞灯照射下反应120min,NB的降解率达93%,总有机碳(TOC)去除约31%,显示了该新颖体系对NB光催化降解的高效性和优越性.     

第一性原理的形变势理论研究声学声子散射对电荷传输的影响

本文应用密度泛函理论和玻尔兹曼方程,在形变势理论的框架和驰豫时间近似下,研究了分子晶体中电子与声学声子散射对电荷传输的影响.针对蒽、萘、丁省和并五苯的计算表明,非局域化电子的传输过程主要受到来自于声学声子的散射.对于蒽晶体,与以前的Holstein-Peierls模型计算结果相比,发现纵向声学声子对空穴的散射强度是光学声子的3倍,所得到的空穴迁移率更接近超纯单晶样品的实验测量结果.同时,我们发现电子的本征迁移率比空穴还要大,应用前线轨道交叠分析可以合理地解释这一结果.     

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.     

基于200 kV/15 A逆变型直流高压电源的控制策略

针对传统三相三电平逆变器在较小占空比模式下输出电压纹波较大的不足，提出了一种新的双重控制策略。该策略通过控制直流母线电压大小与逆变器的占空比，从而实现对输出直流电压较大范围内的可控调整。建立200 kV/15 A的逆变型直流高压电源MATLAB/Simulink系统仿真模型，采用上述控制策略，实现了输出电压分别为200 kV和20 kV时，纹波均小于±1%，验证了新型控制策略在输出电压宽范围情况下，输出电压纹波能够满足负载要求。     

中性束离子源实验平台80k V/50A/20ms高压电源设计分析与优化

高压电源是中性束加热用离子源束流引出的关键设备，其运行参数和性能直接决定引出束粒子能量和离子源引出效率。为了进一步提高中性束离子源实验平台高压运行参数和性能，重新优化设计并研制了80k V/50A高压电源的所有模块。首先介绍了80k V/50A高压模块电源的主电路拓扑结构和电源模块，运用仿真软件对高压电源主回路进行了充放电、打火保护仿真，仿真结果符合设计要求。最后，通过调试实验发现了电源模块存在空间绝缘不足、整流桥击穿、触发控制不响应等问题，进行了分析优化改进，完成了80k V/50A高压模块电源的升级研制。     

Observation of Charge Density Wave in Layered Hexagonal Cu1.89Te Single Crystal

We report comprehensive transport, electron microscopy and Raman spectroscopy studies on transition-metal chalcogenides Cu_1.89Te single crystals. The metallic Cu_1.89Te displays successive metal-semiconductor transitions at low temperatures and almost ideal linear MR when magnetic field up to 33 T. Through the electron diffraction patterns, the stable room-temperature phase is identified as a 3 × 3 × 2 modulated superstructure based on the Nowotny hexagonal structure. The su...