C70O2可能异构体的结构和电子光谱的理论研究＊

用AM1、 PM3及INDO系列方法研究了C     

一种新的光致变色膜：Na2WO4-PAA-Glycerol体系研究

A method for preparing Na₂WO₄-PAA-Glycerol photochromic films was reported. The film was composed of Na₂WO₄, PAA and Glycerol, which were coated on a glass substrate. The film turned blue in the sun, and bleached to transparent in the darkness. The UV-Visible spectra showed strong absorbance at 300～500 nm, and the ABS changed signifanctly at 500～800 nm. The film showed the best photochromic behavior when n_Na2WO4∶n_PAA is 4%～5%. The mechanism was suggested that after irradiation, poly tunstate produced by Na₂WO₄ and PAA formed the tungsten blues. The tungsten blues were bleached due to oxidation back to poly tunstate by oxygen. The film showed not only an excellent photochromism property with rapid response and good reversibility, but also the simple techniques and good stability.     

高效液相色谱-串联质谱法测定塑料中的1-甲基-2-吡咯烷酮

建立了测定塑料中1-甲基-2-吡咯烷酮含量的高效液相色谱–串联质谱法。以丙酮为提取剂,于室温下用超声波提取样品中的1-甲基-2-吡咯烷酮,提取液于35℃旋蒸至干,经甲醇溶解后,过0.22μm有机系滤膜。采用Innovation~(TM) C_(18)色谱柱(15 cm×2.1 mm,3.0μm)进行分离,用电喷雾电离(ESI)源、正离子模式进行扫描,以多反应监测模式检测。在优化的实验条件下,1-甲基-2-吡咯烷酮的质量浓度在1～50 ng/mL范围内与色谱峰面积呈良好的线性关系,线性相关系数为0.999 8,方法检出限为0.18μg/kg,样品加标回收率为75.0%～93.7%,测定结果的相对标准偏差为1.2%～2.8%(n=6)。该方法样品处理简单、快速,适用于塑料中1-甲基-2-吡咯烷酮的日常检测。     

非线性拟抛物型积分微分方程的初边值问题和初值问题

本文研究非线性拟抛物积分微分方程的初边值问题和初值问题。运用Galerkin方程结合能量估计证明了问题的整体强解的生存性、唯一性和稳定性，最后在一定条件下讨论了初边值问题整体解的不存在性和爆破问题。     

一类带有非线性阻尼项和源项的四阶波动方程整体解的存在性与不存在性

考虑一类带有非线性阻尼项和源项的四阶波动方程的初边值问题.通过结合Galerkin逼近,势井方法和单调紧致方法,在最少的先验估计下获得了整体解的存在性.此外,在初始能量为负的情况下,证明了存在有限时间内爆破的解.     

在玻璃转变温度及其以上温区聚苯乙烯/聚氧化乙烯共混物的动力学弛豫行为

用熔融共混法制备了不同组分的聚苯乙烯(PS)与聚氧化乙烯(PEO)共混物(PS/PEO).在玻璃转变温度T_g及其以上温区,利用相对能量耗散技术研究了该共混物的动力学行为.结果发现,在能量耗散-温度曲线上出现了两个弛豫型的耗散峰(α峰和α′峰).分析表明,α峰是与PS玻璃转变有关的特征耗散峰; α′峰则对应于一种“液-液转变”.两者的弛豫时间τ都不满足Arrhenius关系.此外,还研究了组分对这两个弛豫型耗散峰的影响,并给予了定性的解释. 关键词： 相对能量耗散 玻璃转变 力学弛豫     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

航空胶片冲洗机直流电机调速控制系统设计

针对航空胶片冲洗机控制困难表现其电机负载不均匀，低速运行情况下电机震动剧烈．研制了专用的反馈控制系统．以双89C51单片机为核心组成控制电路，编写了系统操作程序和数字PID控制程序．对PID参量对控制系统稳定性的影响进行了分析，得出适应于本系统的PID控制规律，并经过大量的试验，获得了能使各档速度稳定运行下的PID控制参量．实践表明，该控制系统运行稳定可靠，低速控制准确度在3％以内，中高速准确度达到1％．     

Laplace-Stieltjes 变换所定义的解析函数的值分布

分别对右半平面上有限正级与无穷级Laplace-Stieltjes变换的Borel点的存在性进行 了研究, 证明了在一定条件下, 右半平面上$\tau(\tau>1)$级Laplace-Stieltjes变换在虚轴上必有一个 $\tau$级Borel点；$\rho(\frac{1}{\sigma})$级Laplace-Stieltjes变换在虚轴上必有一个无有限例外值的$\rho(\frac{1}{\sigma})$级Borel 点.     

用质心速度图解法分析粒子分裂问题

本文介绍一种作留法，可由两质点的速度求得其质心速度及两质点相对于质心的速度．利用这种方法很容易实现质心参照系和实验室参照系间的相互转变，具有很强的直观性，适宜用以讨论粒子分裂和碰撞之类问题．本文着重讨论了粒子分裂时两子粒子飞行夹角在各种情况下的取值范围．