在物理化学课程中培养大学生逻辑思维能力的探索与实践

逻辑思维是培养解决问题能力和发展创新能力的基础。要促进大学生综合素养的发展首先要促进其逻辑思维能力的形成和发展。结合物理化学课程的特点,在教学中通过创设真实问题情境,为学生逻辑思维能力的培养提供载体;拆解思维逻辑,有的放矢培养逻辑思维以及构建即时评价体系,切实促进逻辑思维能力发展。实践证明相关策略能够有效促进学生科学思维能力的发展,在观察、分析、综合、概括、判断以及推理等方面都有所提升。     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

溶胶浓度对Ag/Mgo.2Zn0.8O/ITO阻变异质结性能的影响研究

采用溶胶-凝胶法制备了Ag/Mg0.2Zn0.8O/ITO异质结,研究了溶胶浓度对Mg0.2Zn0.8O薄膜生长行为、阻变性能和疲劳特性等的影响.研究表明:Mg0.2Zn0.8O为多晶薄膜,平整致密,且随溶胶浓度的增加结晶度逐步增强,但溶胶浓度过大会导致裂纹产生.阻变行为表明,随着溶胶浓度的增加,Vsct电压逐渐升高,高阻态的阻值(RHRS)逐渐下降,低阻态的阻值(RLRS)无明显变化,RHRs/ RLRS和无疲劳循环次数逐渐降低.不同溶胶浓度所制备Ag/Mg0.2Zn0.8O/ITO异质结遵循相同的导电机制,但低压区域遵循欧姆传导机制的范围有所不同,浓度为0.3 mol/L的薄膜具有较好的综合性能,其Vset低至1.2V、无疲劳循环次数达到230次、RHRs/ RLRS大于10.     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.     

基于双纳米金探针杂交法检测HBV DNA

利用双纳米金探针结合基因芯片平台建立了一种检测乙肝病毒基因(HBV DNA)的新方法. 根据HBV DNA的保守序列设计捕获探针和信号报告探针, 通过一对互补的纳米金检测探针的双杂交法对HBV DNA进行信号放大, 最后进行银染, 达到对HBV DNA的可视化检测. 该方法的灵敏度高, 可检测10 fmol/L的HBV DNA, 且能在1.5 h内完成检测. 其具有的快速、 高灵敏度及低成本等优势使其有望发展成为一种检测HBV DNA的新方法.     

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

名义上无水硬玉矿物中“水”的热变异行为研究

以硬玉岩中名义上无水硬玉矿物为研究对象,通过常温和变温红外光谱测量,确定硬玉矿物结构水表征及变温过程热变异行为。研究结果显示：由M-OH伸缩振动所致的红外吸收谱带集中于3 700～3 600,3 570～3 520,3 500～3 300及3 230～3 140 cm-1波数范围内,但在不同的硬玉岩中具有不同的红外吸收。变温过程中,该吸收谱带基本在500 ℃左右相对吸收强度出现较为明显的减弱,且结构水含量也逐渐下降,进一步表征硬玉矿物中的“水”是以结构水的形式进入晶格。但此M-OH伸缩振动所致的吸收谱带、结构水含量和指纹谱均在850 ℃附近出现较为明显的变化,预示该温度硬玉矿物的成分已出现变异。硬玉矿物中“水”的热变异行为为进一步了解水分子的赋存状态与结合方式及其成岩机制提供一定的佐证。     

Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully depleted(FD) silicon-on-insulator(SOI) technology is investigated using three-dimensional technology computer-aided design(3DTCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect(FBE) whether for positive or negative channel metal oxide semiconductor(PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking(IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.     

等离子体助燃旋流扩散火焰的光谱分析

介质阻挡放电(DBD)辅助燃烧是等离子体技术领域发展起来的新的应用途径.本文利用CCD相机及光谱仪记录并分析甲烷-空气旋流扩散燃烧火焰形态及特征光谱,研究了等离子体激励的助燃、稳燃机理,分析了不同激励方式对等离子激励效果的影响。实验结果表明,等离子体激励放电会产生大量的自由基及活性基团,如CH,OH,O~+,O原子的各激发态能级及N_2第一正带系等谱线,其中重点分析了加电前后及不同激励方式下O原子(3s~3S~0→3p~5P,λ=777.5 nm)及氮气第一正带系B~3Π_g→A~3∑_u~+粒子(振动带波长为λ=891.2 nm)发射光谱变化,由于氮原子与氧原子均为加速燃烧的重要活性粒子,这些基团的产生使得甲烷更容易发生一系列链式氧化反应。定常激励产生的活性粒子浓度大于未经过等离子体激励及非定常激励下所产生的活性粒子浓度;经过等离子体激励后火焰根部更靠近燃烧器喷嘴底部,说明等离子体激励产生的活性粒子加速了链式反应的进行,缩短了点火迟滞时间.