钕有机框架配合物Nd(BTC)的双光子上转换荧光

稀土上转换荧光材料和金属有机框架配合物是材料学、化学等学科近年来的两大研究热点,引起了广泛的研究关注。其中,基于稀土元素Nd3+的配合物是目前较为普遍的上转换荧光材料。文章表征了通过溶剂热法合成的稀土有机框架配合物Nd(BTC)的吸收和荧光等光谱性能,发现在808 nm的激光激发下,Nd(BTC)的荧光峰位于1 064 nm左右;在580 nm的激光激发下,获得了位于450 nm左右的上转换荧光峰,其上转换发光机理可归结于激发态吸收和能量传递上转换。上述结果表明,该框架配合物可作为一种上转换发光材料,有望应用于生物荧光标记、荧光显示等多个领域。     

Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学microcrystalline silicon, VHF-PECVD, optical emission spectroscopy2005-11-092005-11-092005-12-12This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed.     

甲醛在脯氨酸膜修饰电极上的电催化氧化

应用电化学法和光谱电化学法研究了脯氨酸膜修饰电极的制备 ,用循环伏安法探讨了该膜的电化学性质及其对甲醛的催化氧化 .该电极催化稳定性良好 ,在NaOH溶液中 ,掺杂Ni (Ⅱ )后的脯氨酸膜修饰电极对甲醛和乙醇的氧化均有一定的催化活性 ,但对甲醛的催化活性更佳     

甲烷在流态化催化剂床裂解生长多壁碳纳米管

甲烷在流态化催化剂床裂解生长多壁碳纳米管;多壁碳纳米管;Ni-Mg-O催化剂;甲烷;流化床;催化化学蒸汽沉积法     

铽改性铈锆固溶体

铽改性铈锆固溶体;Ce0.6Zr0.4-xTbxO2-y固溶体;三效催化剂;储氧材料;共沉淀法;溶胶-凝胶法     

Ag/La_(0.6)Sr_(0.4)MnO_3基催化剂上CH_3OH和CO的完全氧化

合成了Ag/La0 6 Sr0 4 MnO3和Ag/La0 6 Sr0 4 MnO3/γ -Al2 O3两系列催化剂 ;发现钙钛矿型La0 6 Sr0 4 MnO3对低浓度CH3OH或CO的完全氧化显示出相当高的催化活性 ,适量Ag对钙钛矿型La0 6 Sr0 4 MnO3基质的修饰使其对CH3OH或CO完全氧化催化活性获明显提高 ;在 6%Ag/2 0 %La0 6 Sr0 4 MnO3/γ -Al2 O3催化剂上 ,CH3OH完全氧化的T95温度可低至 4 1 3K ,反应尾气中CH3OH氧化中间产物HCHO和CO的含量在检测极限以下 ;而在相同反应条件下在 1 %Pd/γ -Al2 O3和 1 %Pt/γ -Al2 O3催化剂上 ,CH3OH完全氧化的T95温度分别为 5 1 2和 4 68K ,相应反应尾气中HCHO含量分别为 2 0 0× 1 0 -6 和 63 0× 1 0 -6 ;对比考察了这些催化剂的耐热性能和操作稳定性 ,并结合XRD、XPS和H2 -TPR的表征结果 ,讨论了Ag的促进使用本质     

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

In this paper, two-dimensional(2D) transient simulations of an Al Ga N/Ga N high-electron-mobility transistor(HEMT)are carried out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current–voltage(I–V) curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I–V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of Al Ga N/Ga N HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of Ga N-based devices.     

超声技术应用于非水相酶催化的研究

超声波作为一种绿色环保的技术，在非水相酶催化方面引起了广泛的关注。本文综述了超声波辅助非水相酶催化反应的热效应、机械传质作用及空化效应等物理作用机制，并阐述了超声波对非水相酶催化和酶构象的影响。     

NUMERICAL PREDICTION OF PROCESS-INDUCED RESIDUAL STRESSES IN GLASS BULB PANEL

A numerical simulation model for predicting residual stresses which arise during the solidification process of pressed glass bulb panel was developed. The solidification of a molten layer of glass between cooled parallel plates was used to model the mechanics of the buildup of residual stresses in the forming process. A thermorheologically simple thermoviscoelastic model was assumed for the material. The finite element method employed was based on the theory of shells as an assembly of flat elements. This approach calculates residual stresses layer by layer like a truly three-dimensional calculation, which is well suited for thin pressed products of complex shape. An experimental comparison was employed to verify the proposed models and methods.     

SHER-HIAF ring lattice design

The Super Heavy Experimental Ring (SHER), which is one of the rings of the next accelerator complex High Intensity Heavy Ion Accelerator Facility (HIAF) at IMP, has to be optimized for e-cooling. Its lattice is designed for two modes: the first is the isochronous mode, which is a time-of-flight mass spectrometer for short-lived secondary nuclei, the second is the storage ring mode, which is used for collecting and cooling the secondary rare isotope beams from the transport line. In order to fulfil its purpose, the ion optics can be set to different ion optical modes.