Gd2(WO4)3: Eu纳米发光材料中黄昆因子和能量传递速率的实验获得

采用共沉淀法制备了不同Eu³⁺掺杂浓度的Gd₂(WO₄)₃纳米发光材料. 测量了纳米材料样品的X射线衍射谱(XRD) 和场发射扫描电镜, 对样品的结构和形貌进行了表征. 测量了各样品的发射光谱和激发光谱(声子边带光谱), 绘制了浓度猝灭曲线, 确定了最佳的掺杂浓度为20 mol%. 通过声子边带光谱计算了不同掺杂浓度样品的黄昆因子. 测量了不同浓度样品的荧光寿命, 利用Auzel模型对Eu^{3+ 5}D₀能级荧光寿命数据进行了拟合, 确定了⁵D₀能级的固有寿命和猝灭过程中生成的声子数. 本文还根据荧光寿命数据计算了Eu³⁺之间的能量传递速率, 确定了能量传递速率与浓度的关系. 关键词： 钨酸盐 3+')" href="#">Eu³⁺ 黄昆因子 能量传递速率     

Hydrogen peroxide biosensor based on electrodeposition of zinc oxide nanoflowers onto carbon nanotubes film electrode

A new amperometric biosensor for hydrogen peroxide was developed based on adsorption of horseradish peroxidase at the glassy carbon electrode modified with zinc oxide nanoflowers produced by electrodeposition onto multi-walled carbon nanotubes （MWNTs） film. The morphology of the MWNTs/nano-ZnO electrode has been investigated by scanning electron microscopy （SEM）, and the electrochemical performance of the electrode has also been studied by amperometric method. The resulting electrode offered an excellent detection for hydrogen peroxide at -0.11 V with a linear response range of 9.9×10^-7 to 2.9×10^-3 mol/L with a correlation coefficient of 0.991, and response time 〈5 s. The biosensor displays rapid response and expanded linear response range, and excellent stability.     

Electrochemical oxidation behavior of hydroxypivalaldehyde in the ionic liquids

The similar electrochemical oxidation behaviors of hydroxypivalaldehyde in ionic liquids （ILs） medium, C4MIMPF6, C4MIMBF4 and CsMIMPF6, are investigated using classic electrochemical methods, respectively. Only the product, hydroxypivalic acid is detected by high performance liquid chromatography （HPLC）. It can be conferred that the electrochemical oxidation of hydroxypivalaldehyde consists of two successive one-electron irreversible reactions at glass carbon （GC） electrode and the possible reaction mechanism in the ILs is proposed firstly. The diffusion coefficients of hydroxypivalaldehyde are obtained according to the electrochemical characteristics of hydroxypivalaldehyde in C4MIMPF6, C4MIMBF4 and CsMIMPF6.     

苯酚在热氧化法制备的SnO2/Ti 电极上的电氧化研究

A SnO₂/Ti electrode prepared by thermal oxidation was used as the anode for galvanostatic electrolysis in acidic solution containing phenol, the time-dependances of phenol concentration,chemical oxygen demand in solution(COD)and instantaneous current efficiency were determined during electrolysis.The results show that with the SnO₂/Ti anode instead of Pt,the COD significantly decreases at the same charge passage, and average current efficiency of oxidation increases by three times The mechanism for phenol oxidation at two electrodes was discussed.     

不确定混沌系统的径向基函数神经网络反馈补偿控制

对不确定混沌系统控制问题, 研究了一种基于径向基函数神经网络(radial basis function neural network, RBFNN)的反馈补偿控制方法. 该方法首先用RBFNN对混沌系统的动力学特性进行学习, 然后用训练好的RBFNN模型对混沌系统进行反馈补偿控制. 该方法的特点是不需要被控混沌系统的数学模型,可以快速跟踪任意给定的参考信号. 数值仿真试验表明了该控制方法不仅具有响应速度快、控制精度高, 而且具有较强的抑制混沌系统参数摄动能力和抗干扰能力.     

K-La-Ni/Si-2催化低碳烷烃与二氧化碳重整制合成气(英文)

Ｎｉ／Ｓｉ２催化剂具有较好的低碳烷烃与二氧化碳重整制合成气的反应性能，添加Ｌａ２Ｏ３助剂和Ｋ２Ｏ助剂可提高催化剂活性和合成气收率，从而进一步改善催化剂的低碳烷烃与ＣＯ２重整制合成气的反应性能，研制的ＫＬａＮｉ／Ｓｉ２催化剂，用于天然气与ＣＯ２重整反应制合成气可达９７％的低碳烷烃转化率和９５％以上的合成气收率。     

分数维方法研究GaAs薄膜中的极化子

本文采用分数维方法, 在讨论Al_0.3Ga_0.7As衬底上GaAs薄膜的分数维基础上, 计算了GaAs薄膜中的极化子结合能和有效质量. 随着薄膜厚度的增加, 极化子结合能和质量变化单调地减小. 当薄膜厚度L_w<70 Å并且衬底厚度L_b<200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响比较显著, 随着衬底厚度的增加, 薄膜中极化子的结合能和质量变化逐渐变大; 当薄膜厚度L_w>70 Å或者衬底厚度L_b>200 Å时, 衬底厚度的变化对薄膜中极化子的结合能和质量变化的影响不显著. 研究结果为GaAs薄膜电子和光电子器件的研究和应用提供参考. 关键词： 分数维方法 GaAs薄膜 极化子 低维异质结构     

色散补偿光子晶体光纤结构参数对其色散的影响

光子晶体光纤由于其灵活可调的色散特性用作色散补偿具有极大的应用潜力. 设计了一种色散补偿光子晶体光纤, 并运用频域有限差分法模拟了其色散特性,从理论上分析了其结构参数孔间距Λ和空气占空比d/Λ对该光子晶体光纤的色散系数的影响, 并且实际制备出了3种不同结构参数的光子晶体光纤. 通过对其色散曲线对比分析表明: 当光子晶体光纤孔间距在1 μm附近时, 其色散系数随着孔间距Λ和占空比d/Λ的增大而增加, 但对于孔间距Λ的变化比占空比d/Λ更为敏感, 并且随着孔间距Λ的增加,其对色散系数的影响能力逐渐减小. 设计并制备的光子晶体光纤在1550 nm处的色散系数为-241.5 ps·nm^-1·km^-1, 相对色散斜率为0.0018, 具有较好的色散补偿能力. 关键词： 色散 色散补偿 光子晶体光纤 结构参数