基于低空成像高光谱系统探测植被日光诱导叶绿素荧光

植被叶绿素荧光与光合作用关系密切,被认为是光合作用的有效探针。该研究利用成像高光谱传感器和无人飞艇构建了一套适用于低空叶绿素荧光探测的系统。针对低空叶绿素荧光探测中,太阳下行辐射光谱难以获取的情况,基于已有的aFLD方法,提出一种新的叶绿素荧光提取方法a3FLD,该方法利用了非荧光发射体,且考虑植被反射率在夫琅和费线附近的变化。通过模拟数据以及实测数据对两种提取结果进行了比较。模拟数据分析结果显示：当地物的反射率在夫琅和费线附近存在一定的变化时,a3FLD计算得到的荧光值误差小于aFLD,地物反射率变化越大,a3FLD的改进越明显。对低空高光谱影像数据的分析显示：aFLD和a3FLD提取不同植被的日光诱导叶绿素荧光相对大小关系相一致,与作物所处的生长阶段吻合。但aFLD荧光提取值比a3FLD高15%左右。aFLD的结果中有部分非荧光发射体得到较强荧光,a3FLD能改进此问题。结果显示,利用该系统和方法能够成功地提取到植被叶绿素荧光,且所提出a3FLD方法提取的结果优于aFLD方法。     

Volt-ampere characteristics of a nitrogen DC plasma arc with anode melting

The characteristics of a nitrogen arc using a graphite cathode and a melting anode in a pilot-scale plasma furnace are investigated. The voltage is examined as a function of current and apparent plasma length. The voltage increases non-linearly with the increase of apparent plasma length, with the current fixed. The experimental data so obtained are compared with the predictions of the Bowman model for the electric arc, and with numerical simulations as well. The level of agreement between the experimental data at the melting anode and the numerical predictions confirms the suitability of the proposed the Bowman model. These characteristics are relevant to the engineering design and evaluation of a DC plasma furnace and reactor for the treatment of hazardous fly ash waste.     

无线输电演示仪

自制的无线输电演示仪, 能直观演示无线输电的两种方式, 取得良好的教学效果, 该演示仪能让学生 体念电磁波的魅力, 激发学生的好奇心, 点燃学生的科学兴趣, 提高学生的科学素养     

内壁粗糙碗中的动力学问题深度探究 ( 二)

为更深入探究内壁粗糙碗中的动力学问题, 利用Ma t h e ma t i c a数学软件计算和画出了物体逆时针运动 的角度θ与运动时间t的图像关系和物体逆时针运动的角速度ω与运动时间t的图像关系, 从图像关系可以准确得 到在某时刻对应的角度、 角速度、 速度     

基于分子动力学模拟的石墨烯镁基复合材料力学行为

镁合金因其低密度被视为最轻的工程结构金属材料,但因较差的塑性变形行为限制了其广泛应用,因此增强镁合金的综合力学性能已经成为当前材料领域的研究热点.本文采用分子动力学模拟方法,研究了在拉伸载荷下石墨烯对金属镁变形行为和力学性能的影响.研究结果表明,石墨烯的嵌入能够明显提升金属镁的强度和杨氏模量,并对其塑性变形阶段的第二次应变强化产生较大影响.研究指出,石墨烯镁基(GR/Mg)复合材料和纯镁的塑性变形行为相同,在塑性变形过程中均发生了从密排六方到体心立方再到密排六方结构的相变.石墨烯嵌入位置对GR/Mg复合材料上下两部分镁基体的塑性变形行为有较大的影响.当石墨烯嵌入高度较小时,石墨烯下方的镁基体塑性变形能力较强,容易发生位错滑移,而当石墨烯嵌入高度较大时,石墨烯上下方的两部分镁基体的塑性变形能力相当,它们的塑性变形行为趋于同步.此外,本文对镁基体的相变机制也进行了详细分析.本文的研究结果对于设计高性能的石墨烯金属基复合材料具有一定的理论指导意义.     

建立新的物理实验课教学体系的尝试

现代科学校术的飞速发展,新的科学知识不断涌现,科学知识的总量迅速增长,知识更新周期越来越短。边缘学科,横向学科,综合学科的不断产生和发展,要求高等院校培养的人材不但要有扎实的基础,较宽的知识面,还要有较强的科学研究能力。所以高等教育必须改变传统的以传授知识为主的教育方式,加强学生能力的培养。学生的能力主要表现为分析问题和解决问题的能力,以及创造精神。物理实验实际是人们进行自然科学研究的一种基本方法,具有探索性和创造精神的实验活动,所     

The interaction of an atmospheric pressure plasma jet using argon or argon plus hydrogen peroxide vapour addition with bacillus subtilis

This paper reports that an atmospheric pressure dielectric barrier discharge plasma jet, which uses argon or argon + hydrogen peroxide vapour as the working gas, is designed to sterilize the bacillus subtilis. Compared with the pure argon plasma, the bacterial inactivation efficacy has a significant improvement when hydrogen peroxide vapour is added into the plasma jet. In order to determine which factors play the main role in inactivation, several methods are used, such as determination of optical emission spectra, high temperature dry air treatment, protein leakage quantification, and scanning electron microscope. These results indicate that the possible inactivation mechanisms are the synergistic actions of chemically active species and charged species.     

GaAs／GaInNAsSb超晶格性能的影响

用Keafing的价力场(valence force field)模型和蒙特卡罗方法计算了GaAs／GaInNAsSb超晶格中键的分布、原子的精确位置以及应变．用折叠谱(foldedspectrummethod)合Williamson经验赝势法计算了GaAs／GaInNAsSb超晶格应变条件下的电子结构．讨论了N和Sb原子以及超晶格单分子层数对电子结构的影响．发现导带底电子态在N原子周围的局域化减小了光跃迁矩阵元，从而影响了该超晶格的发光性能．计算并讨论了超晶格的电子和空穴的有效质量．     

Optimization of Metamorphic InGaAs Quantum Wells on GaAs Grown by Molecular Beam Epitaxy

We investigate the molecular beam epitaxy growth of metamorphic InxGal-xAs materials （x up to 0.5） on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical qualdty. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content （55%） InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.     

Temperature Dependence of Photoluminescence from Single and Ensemble InAs/GaAs Quantum Dots

We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exciton emission peak for single quantum dot shows broadening and redshift. For ensemble quantum dots, however, the exciton emission peak shows narrowing and fast redshift. We use a simple steady-state rate equation model to simulate the experimental data of photoluminescence spectra. It is confirmed that carrier-phonon scattering gives the broadening of the exciton emission peak in single quantum dots while the effects of carrier thermal escape and retrapping play an important role in the narrowing and fast redshift of the exciton emission peak in ensemble quantum dots.