Ultraviolet Sensitive Ultrafast Photovoltaic Effect in Tilted KTaO3 Single Crystals

An ultraviolet sensitive ultrafast photovoltaic effect is observed in tilted 10° KTaO3 （KT） single crystals. The rise time of the transient photovoltaic pulse is 497.4 ps and the full width at half maximum is 974.6 ps under irradiation of a 266 nm laser pulse with 25 ps duration. An open-circuit photovoltage sensitivity of 328 mV/mJ and a photocurrent sensitivity of 460 mA/mJ are obtained. The experimental results demonstrate the potential applications of KT single crystals in ultraviolet detection.     

Ultrafast Photoelectric Effects in Heterojunctions of La0.7Sr0.3MnO3 and Si

Ultrafast photoelectric effects have been observed in p-n heterojunctions of La0.7Sr0.3MnO3(LSMO)/Si and LSMO/SrTiO3_/Si for the first time. The rise time was about 1 ns and the full width at half maximum was about 2ns for the photovoltaic pulse when the heterojunction was irradiated by a laser of -25 ps pulse duration and 1064 nm wavelength. The photovoltaic sensitivity was as large as 435 mV//mJ for a 1064 nm laser pulse. No such pulse was observed with irradiation from a pulsed 10.6 μm CO2 laser.     

Laser Molecular Beam Epitaxy Growth of BaTiO3 in Seven Thousands of Unit-Cell Layers

BaTiO3 thin films in seven thousands of unit-cell layers have been successfully fabricated on SrTiO3 （001） substrates by laser molecular beam epitaxy. The fine streak pattern and the undamping intensity oscillation of reflection high-energy electron diffraction indicate that the BaTiO3 film was layer-by-layer epitaxial growth. The measurements of scanning electron microscopy and atomic force microscopy show that surfaces of the BaTiO3 thin film are atomically smooth. The measurements of x-ray diffraction and transmission electron microscopy, as well as selected-area electron diffraction reveal that the BaTiO3 thin film is a c-oriented epitaxial crystalline structure.     

钙钛矿氧化物异质结的光电特性研究进展

光与物质相互作用可以产生各种光学现象,其中光电效应是非常重要的现象之一.文中集中回顾了文章作者在钙钛矿氧化物异质结的光电效应研究中的进展.在钙钛矿氧化物异质结中,分别观测到了传统的纵向光电效应和反常的横向光电效应,并通过对含时的漂移-扩散方程的自洽求解,从理论上分别揭示了钙钛矿氧化物异质结纵向和横向光电效应的动态过程.文章首先介绍了钙钛矿氧化物异质结纵向光电效应的研究进展,接着概述了钙钛矿氧化物异质结横向光电效应研究的进展.最后对氧化物异质结的纵向和横向光电效应的潜在应用前景进行展望.     

介质谐振器法测量超导微波表面电阻

高温超导薄材料在微波器件中应用的出发点主要是利用它在临界温度下极低的表面电阻。因此要对超导器件性能作出准确的评估,必须精确测量超导薄膜的微波表面电阻。本文提出了利用蓝宝石介质圆柱的ＴＥ０１１谐振模式来测量超导微波表面电阻的一种方法。设计并制作了工作于１８．９ＧＨｚ和１７．６ＧＨｚ的两种高Ｑ值谐振器。其在测试中表现出了相当高的灵敏度。同时具有不损坏被测薄膜,安装调试简单方便,可重复性好的优点,可用于     

高Tc超导薄膜/砷化镓场效应器件混合微波振荡器的研制

研制了一种高T_c超导薄膜/砷化镓场效应器件混合的微波振荡器,整个电路采用微带电路形式,制备在一片10mm×15mm的YBa₂Cu₃O_7-δ超导薄膜上。该振荡器采用共源和栅结串联反馈电路结构,以GaAs MESFET(NE72084)为负阻元件,利用高品质因数的超导微带谐振器作为稳频元件。通过提高谐振器的品质因数和调节它与MESFET的耦合强度,降低了振荡器的相位噪声。相位噪声在偏离载频(10.6GHz)为10kHz时达到-87dBc/Hz。