YBa2 Cu3 O7-δ/SrNb0.01 Ti0.99 O3 p-n结的制备及其特性

采用脉冲激光沉积技术,在n型SrNb0.01Ti0.99O3(SNTO)单晶基片上生长p型YBa2Cu3O7-δ(YBCO)薄膜,制备出YBCO/SNTO p-n结.YBCO薄膜是高度c轴织构的超导薄膜,且具有良好的超导电性.YBCO/SNTO p-n结具有较好的整流特性和很好的温度与磁场稳定性.     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术，利用两步法，在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示， TiN薄膜材料表面光滑，在10 μm×10 μm范围内，均方根粗糙度为0842nm.霍耳效应测量结果显示，TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm，迁移率达到5830 cm²/V·S，表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明，高质量的TiN薄膜材料被外延在Si衬底     

用激光分子束外延在玻璃衬底上生长La0.67Sr0.33MnO3薄膜

采用激光分子束外延技术,在玻璃衬底上制备了La_067Sr_033MnO₃ （LSMO） 薄膜,X射线衍射测量结果表明在玻璃衬底上生长的LSMO薄膜沿c轴择优取向生长.在外磁场3 T和88, 220, 300 K条件下,LSMO薄膜的磁电阻变化率分别达到-378%, -268%和-607%.实验结果表明,在廉价的玻璃衬底上制备大面积和具有应用价值的锰氧化物薄膜是可行的. 关键词： 锰氧化物薄膜 玻璃衬底 外延生长     

我国部门间劳动报酬份额差异及影响因素研究

基于2012、2017和2018年中国非竞争型投入产出表构建了考虑时点和个体在内的双向固定效应模型,研究了我国部门间劳动报酬份额的差异及其影响因素.结果表明:1)部门关联效应中的后向关联系数对劳动报酬份额产生了显著的负向影响.2)部门自身效应中的中间进口替代因素和行业竞争度对劳动报酬份额产生了显著的负向影响,服务化程度对劳动报酬份额的正向影响并不显著.3)部门关联效应以及部门自身效应对部门劳动报酬份额的影响存在行业异质性,在制造业和服务业中的影响程度有所区别.     

钙钛矿氧化物异质结的研究进展

在过去几年中,为了研究钙钛矿氧化物异质结的物性和潜在的应用前景,我们进行了许多探索。在本文中,我们总结了对钙钛矿氧化物异质结一些物理性质的理论描述,揭示了La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3异质结中发现的正磁电阻效应和横向光电效应的物理起源。我们提出的理论模型将有助于理解界面对钙钛矿氧化物异质结各种性质的影响。     

用激光分子束外延在Si衬底上外延生长高质量的TiN薄膜

采用激光分子束外延技术,利用两步法,在Si单晶衬底上成功地外延生长出TiN薄膜材料.原子力显微镜分析结果显示, TiN薄膜材料表面光滑,在10 μm×10 μm范围内,均方根粗糙度为0842nm.霍耳效应测量结果显示,TiN薄膜在室温条件下的电阻率为36×10^-5Ω·cm,迁移率达到5830 cm²/V·S,表明TiN薄膜材料是一种优良的电极材料.X射线θ—2θ扫描结果和很高的迁移率均表明,高质量的TiN薄膜材料被外延在Si衬底 关键词： 激光分子束外延 TiN单晶薄膜 外延生长     

用激光分子束外延在玻璃衬底上生长La0.67Sr0.33MnO3薄膜

采用激光分子束外延技术,在玻璃衬底上制备了La0.67Sr0.33MnO3 (LSMO) 薄膜,X射线衍射测量结果表明在玻璃衬底上生长的LSMO薄膜沿c轴择优取向生长.在外磁场3 T和88, 220, 300 K条件下,LSMO薄膜的磁电阻变化率分别达到-37.8%, -26.8%和-6.07%.实验结果表明,在廉价的玻璃衬底上制备大面积和具有应用价值的锰氧化物薄膜是可行的.     

Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p-n Heterojunctions

Good rectifying current-voltage characteristics and nanosecond photoelectric effects are observed in the p-n hereto junctions of La0.9Sr0.1 MnO3/SrNb0.01 Ti0.99O3 fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit, photovoltaic pulses when the La0.9Sr0.1MnO3 film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25 ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p-n hereto junction.     

Ultraviolet Photoelectric Effect in ZrO2 Single Crystals

Nanosecond photoelectric effect is observed in a ZrO2 single crystal at ambient temperature for the first time. The rise time is 20ns and the full width at half maximum is about 30ns for the photovoltaic pulse when the wafer surface of the ZrO2 single crystal is irradiated by 248 nm KrF laser pulses. The experimental results show that ZrO2 single crystals may be a potential candidate in UV photodetectors.     

High-performance synaptic transistors for neuromorphic computing

The further development of traditional von Neumann-architecture computers is limited by the breaking of Moore’s law and the von Neumann bottleneck, which make them unsuitable for future high-performance artificial intelligence (AI)systems. Therefore, new computing paradigms are desperately needed. Inspired by the human brain, neuromorphic computing is proposed to realize AI while reducing power consumption. As one of the basic hardware units for neuromorphic computing, artificial synapses have recently aroused worldwide research interests. Among various electronic devices that mimic biological synapses, synaptic transistors show promising properties, such as the ability to perform signal transmission and learning simultaneously, allowing dynamic spatiotemporal information processing applications. In this article, we provide a review of recent advances in electrolyte-and ferroelectric-gated synaptic transistors. Their structures, materials,working mechanisms, advantages, and disadvantages will be presented. In addition, the challenges of developing advanced synaptic transistors are discussed.