《强激光与粒子束》“全固态激光技术”专辑征稿启事北大核心CSCD

自1960年第一台激光器问世以来,我国的激光科学技术随之迅速发展,独立自主的在激光器有关理论、实验研究、应用领域开展了广泛而深入的研究,取得了辉煌的成就。全固态激光器集中了传统固体激光器和半导体激光器的优势于一身,具有体积小、重量轻、效率高、性能稳定、可靠性好、寿命长、易操作、运转灵便(连续/重复率/长/短脉冲)、易智能化、无污染等优点,成为目前最具潜力的新一代激光源之一,且是目前我国在国际上为数不多的从材料源头直到激光系统集成拥有整体优势的高技术领域之一,具备了在部分领域加速发展的良好基础。     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

Reference-frame-independent quantum key distribution of wavelength division multiplexing with multiple quantum channels

Reference-frame-independent quantum key distribution (RFI-QKD) can allow a quantum key distribution system to obtain the ideal key rate and transmission distance without reference system calibration, which has attracted much attention. Here, we propose an RFI-QKD protocol based on wavelength division multiplexing (WDM) considering finite-key analysis and crosstalk. The finite-key bound for RFI-QKD with decoy states is derived under the crosstalk of WDM. The resulting secret key rate of RFI-QKD, which is more rigorous, is obtained. Simulation results reveal that the secret key rate of RFI-QKD based on WDM is affected by the multiplexing channel number, as well as crosstalk between adjacent channels.     

多组元化合物晶体生长过程中的双扩散对流现象

针对多组元化合物晶体的Bridgman生长过程,通过对液相区流场和浓度场的数值模拟,研究生长过程中容器内部双扩散对流与组分分布的情况.首先对比了三段场和梯度场炉壁温度设计情况下液相区的流体双扩散对流以及组分分布情况.在此基础上,针对梯度场炉壁温度条件,分析了不同参数的影响.结果表明:在溶质格拉晓夫数较大时,它的增大能够明显地削弱液相区的流体流动,从而使得界面附近的组分分布也产生变化;此外,拉晶速度的增大也能够使得液相区的双扩散对流受到抑制.     

Single-Photon Detection at Telecom Wavelengths

A single-photon detector based on an InGaAs avalanche photodiode has been developed for use at telecom wavelengths. A suitable delay and sampling gate modulation circuit are used to prevent positive and negative transient pulses from influencing the detection of true photon induced avalanches. A monostable trigger circuit eliminates the influence of avalanche peak jitter, and a dead time modulation feedback control circuit decreases the afterpulsing. From performance tests we lind that at the optimum operation point, the quantum efficiency is 12% and the dark count rate 1.5 × 10^-6 ns^-1, with a detection rate of 500 kHz.     

纳米晶(CeO2)1-x(BiO1.5)x固溶体的水热合成

在240℃水热体系中首次合成出系列纳米晶固溶体(CeO     

非奇性球对称黑洞的稳定性

本文讨论非奇性球对称黑洞的动力学行为,指出这种黑洞是不稳定的。它不可能通过经典动力学过程产生,而只能以量子跃迁的方式形成。一旦遇微小扰动,它将塌缩而形成通常的奇性Schwarzschild黑洞。 关键词：     

一个不等式的简证与改进

本刊 2 0 0 1年第 9期《综合题选编》中给出了一个参数a的最大值问题 ,刊出后陕西柳锋祥 ,浙江华漫天 ,湖北魏烈斌 ,江苏方小连 ,云南张国坤 ,安徽万家练均来稿给出了正确结果 ,本刊按来稿的先后顺序选登浙江陶文强的文章