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Ge_2Sb_2Te_5 film was deposited by RF magnetron sputtering on Si (100) substrate. The structure of amorphous and crystalline Ge_2Sb_2Te_5 thin films was investigated using XRD, Raman spectra and XPS. XRD measurements revealed the existence of two different crystalline phases, which has a FCC structure and a hexagonal structure, respectively. The broad peak in the Raman spectra of amorphous Ge_2Sb_2Te_5 film is due to the amorphous -Te--Te- stretching. As the annealing temperature increases, the broad peak separates into two peaks, which indicates that the heteropolar bond in GeTe_4 and the Sb-Sb bond are connected with four Te atoms, and other units such as (TeSb) Sb-Sb (Te_2) and (Sb_2) Sb-Sb (Te_2), where some of the four Te atoms in the above formula are replaced by Sb atoms, remain in crystalline Ge_2Sb_2Te_5 thin film. And from the results of Raman spectra and XPS, higher the annealing temperature, more Te atoms bond to Ge atoms and more Sb atoms substitute Te in (Te_2) Sb-Sb (Te_2). 相似文献
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This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well. 相似文献
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本文考虑三维不可压缩黏弹性流体力学模型的Cauchy问题.首先引入适当的变量变换,对变换后的方程组,研究其线性化系统的Green函数.接着,根据Green函数逐点估计方法,结合方程组解的表达式,分析Riesz算子的影响,得到解关于时空的逐点估计. 相似文献
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前言电气石是一种斜角棱形压电晶体,z轴为它的电轴。它是一种天然晶体(目前已出现人造电气石晶体)。它的特点是:压电性能稳定;侧向灵敏度(指在x或y轴向加以单位载荷时在z平面上产生的电荷,即d_(31))小;机械强度高;对温度比较敏感,因而电气石作为流体静 ... 相似文献
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<正>The dispersion of Yb-doped fiber is measured by a spectral interferometric technique.The experimental verification is achieved by comparing the measured data with published data of the Nufern 1060xp fiber and the measurement relative error is 1.36%.The parameters of the experimental system,such as minimum required source bandwidth and minimum fiber length,are introduced and analyzed in the measurement. The minimum required source bandwidth predicted through theoretical calculation at the center wavelength of 1070 nm is 19.3 nm,which perfectly agrees with the experimental value. 相似文献
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We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage (I- V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application. 相似文献
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粘性依赖于密度的可压缩Navier-Stokes方程 总被引:1,自引:0,他引:1
张挺 《高校应用数学学报(英文版)》2006,21(2):165-178
The global existence of solutions to the equations of one-dimensional compressible flow with density-dependent viscosity is proved. Specifically,the assumptions on initial data are that the modulo constant is stated at x=∞ +and x=-∞ ,which may be different ,the density and velocity are in L^z ,and the density is bounded above and below away from zero. The results also show that even under these conditions, neither vacuum states nor concentration states can be formed in finite time. 相似文献