Pressure effect on emission spectra and crystal field for La OBr : Eu

Abstract

The emission spectra for LaOBr : Eu were measured at pressures up to 13 GPa and room temperature. The pressure dependences of levels of ⁷F_0,1,2,3,4 and ⁵D_0,1,2 are given. The crystal field parameters B^k _q were computed by fitting the experimental levels. The strength of crystal field decreases with increasing pressure. A brief discussion on the observed phenomena is presented.     

Phase transition of samarium under high pressure

Abstract

The DAC X-ray power photograph method was employed for studing the phase transition of samarium up to 26.3 GPa. The experimental results show that the dhcp and fcc high pressure phase of Sm appeared at about 4.0 and 12.5 GPa and room temperature respectively. The dhcp phase was kept until 19.6 GPa. A model for Sm-type -? dhcp -? fcc phase transition is provided in this paper.     

Effects of γ rays irradiation on structure and property of TiO2 thin films

TiO₂ thin films were deposited on a glass substrate by the radio frequency magnetron sputtering method, and annealed for 2 h at temperatures of 550°C. Then, ⁶⁰Co γ rays with different doses were used to irradiate the resulting TiO₂ thin films. The surface features of films before and after irradiation were observed by scanning electron microscope (SEM). Simultaneously, the crystal structure and optical properties of films before and after irradiation were studied by X-ray diffraction (XRD), UV–VIS transmission spectrum and Photoluminescence (PL) spectrum, respectively. The SEM analysis shows that the film is smooth with tiny particles on the film surface, and non-crystallization trend was clear after irradiated with γ rays. The XRD results indicated that the structure of the film at the room temperature mainly exists in the form of amorphous and mixed crystal at a sputtering power of 200 W, and non-crystallinity was more obvious after irradiation. Obvious difference can be found for the transmissibility of the irradiated and pre irradiation TiO₂ films by the UV-VIS spectra. The color becomes light yellow, and the new absorption edge also appeared at about 430 nm. PL spectra and photocatalysis experiments indicate that the photocatalysis degradation rate of the TiO₂ films on methylthionine chloride solution irradiated with the maximum dose can be increased to 90%.     

高压烧结制备Tb掺杂n型(Bi1–xTbx)2(Te0.9Se0.1)3合金及其微结构和热电性能

采用高压烧结技术制备了稀土元素Tb掺杂的n型Bi2Te2.7Se0.3基纳米晶块体热电材料.将高压烧结成型的样品于633 K真空退火36 h.研究了Tb掺杂量对样品的晶体结构和热电性能的影响.结果表明,高压烧结制备的样品为纳米结构, Tb掺杂使样品的晶胞体积变大,功率因子增大,热导率降低,从而使ZT值提高.Tb掺杂量为x=0.004是最优的掺杂量,该掺杂量的高压烧结样品经退火处理后,于373 K时ZT值达到最大为0.99,并且在323-473 K范围内, ZT值均大于0.8,这对用于温差发电领域具有重要意义.     

光学共振增强的表面铯激活银纳米结构光阴极

金属光阴极因其超短脉冲发射和运行寿命长的特性从而具有重要应用价值,但是较高的功函数和较强的电子散射使其需要采用高能量紫外光子激发且光电发射量子效率极低.本文利用Mie散射共振效应增强银纳米颗粒中的局域光学态密度,提升光吸收率和电子的输运效率,并利用激活层降低银的功函数,从而增强光阴极在可见光区的量子效率.采用时域有限差分方法分析银纳米球阵列的光学共振特性,采用磁控溅射和退火工艺在银/氧化锡铟复合衬底上制备银纳米球,紧接着在其表面沉积制备铯激活层,最后在高真空腔体中测试光电发射量子效率.实验结果表明平均粒径150 nm的银纳米球光阴极在425 nm波长的量子效率超过0.35%,为相同激活条件下银薄膜光阴极的12倍,峰值波长与理论计算的Mie共振波长相符合.     

Quantum Thermalization and Vanishing Thermal Entanglement in the Open Jaynes–Cummings Model

The quantum thermalization of the Jaynes–Cummings (JC) model in both equilibrium and non-equilibrium open-system cases is studied, in which the two subsystems, a two-level system and a single-mode bosonic field, are in contact with either two individual heat baths or a common heat bath. It is found that in the individual heat-bath case, the JC model can only be thermalized when either the two heat baths have the same temperature or the coupling of the JC system to one of the two baths is turned off. In the common heat-bath case, the JC system can be thermalized irrespective of the bath temperature and the system–bath coupling strengths. The thermal entanglement in this system is also studied. A counterintuitive phenomenon of vanishing thermal entanglement in the JC system is found and proved.     

一种超导重力仪磁悬浮力的等效计算

为实现超导重力仪磁悬浮力的精确计算,以GWR型超导重力仪为模型基础,采用有限元的思想,将超导球表面电流理想化为多个等高共轴电流环,计算出各个电流环与超导线圈的作用力,求和得到线圈与超导球间的磁悬浮力。利用MATLAB完成计算程序实现,通过改变下线圈电流和上、下线圈电流比,获得满足一定条件的磁悬浮力及其梯度。选取合适的模型参数,计算出线圈对质量为m=4.069 g超导球的磁悬浮力大小为:Ftotal=3.988×10^-2N,磁悬浮力梯度为:-9.699×10^-3N/m,此时悬浮力梯度合适,满足系统稳定性和灵敏度的要求。     

Ce掺杂6H-SiC电子结构和光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,对未掺杂及Ce掺杂6H-SiC的电子结构和光学性质进行理论计算.计算结果表明,未掺杂6H-SiC是间接带隙半导体,其禁带宽度为2.045 eV,掺杂Ce元素,带隙宽度下降为0.812 eV.未掺杂6H-SiC在价带的低能区,Si-3s、C-2s电子轨道对态密度的贡献较大,在价带的高能区,主要是由Si-3p、Si-3s、C-2p态组成.掺杂后Ce原子的4f轨道主要贡献在导带部分,掺杂后电导率提高.未掺杂时,只有一个介电峰,是价带电子跃迁到导带电子所致,掺杂后有两个介电峰,第一个介电峰是由于导带电子跃迁到Ce原子4f轨道上产生,第二个峰是价带电子向导带电子跃迁产生.未掺杂6H-SiC,在能量为10.31 eV处吸收系数达到最大值,掺杂后在能量为6.57 eV处,吸收系数达到最大值.     

生长及耗散波色-爱因斯坦凝聚中的怪波

利用达布变换法(Darboux transformation),解析的研究了生长及耗散波色-爱因斯坦凝聚(BEC)中的怪波.通过降维和无量纲化,将描述BEC的Gross-Pitaevskii (GP)方程转化成一维无量纲非线性薛定谔方程.利用达布变换,得到了一维非线性薛定谔方程的怪波解析解.根据解析结果,数值模拟了生长及耗散BEC中怪波的性质.结果表明,BEC中出现了一种典型的双洞怪波,并且BEC生长会延缓怪波的消失,而BEC的耗散会加速怪波的消失.