首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5018篇
  免费   88篇
  国内免费   26篇
化学   3510篇
晶体学   61篇
力学   70篇
数学   287篇
物理学   1204篇
  2022年   32篇
  2021年   31篇
  2020年   54篇
  2019年   62篇
  2018年   39篇
  2017年   38篇
  2016年   73篇
  2015年   88篇
  2014年   100篇
  2013年   242篇
  2012年   232篇
  2011年   285篇
  2010年   154篇
  2009年   175篇
  2008年   273篇
  2007年   306篇
  2006年   297篇
  2005年   249篇
  2004年   211篇
  2003年   190篇
  2002年   216篇
  2001年   120篇
  2000年   127篇
  1999年   81篇
  1998年   50篇
  1997年   58篇
  1996年   84篇
  1995年   56篇
  1994年   46篇
  1993年   53篇
  1992年   80篇
  1991年   52篇
  1990年   54篇
  1989年   46篇
  1988年   70篇
  1987年   52篇
  1986年   58篇
  1985年   75篇
  1984年   77篇
  1983年   41篇
  1982年   57篇
  1981年   52篇
  1980年   48篇
  1979年   44篇
  1978年   42篇
  1977年   47篇
  1976年   26篇
  1975年   36篇
  1974年   33篇
  1973年   25篇
排序方式: 共有5132条查询结果,搜索用时 15 毫秒
21.
It is shown that time-dependent temperatures in a transient, conductive system can be approximately modeled by a fractional-order differential equation, the order of which depends on the Biot number. This approximation is particularly suitable for complex shapes for which a first-principles approach is too difficult or computationally time-consuming. Analytical solutions of these equations can be written in terms of the Mittag-Leffler function. The approximation is especially useful if a suitable fractional-order controller is to be designed for the system.  相似文献   
22.
X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO2) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells.  相似文献   
23.
The adsorption behavior of fission products to various soils was studied using a multitracer. The multitracer was prepared by neutron irradiation of 235U. Distribution coefficients of fission products were obtained for seventeen kinds of Japanese soils. It was found that zirconium, niobium, and rare earth elements show high distribution coefficients for all soil samples, however, elements like alkali metals show varied values.  相似文献   
24.
Aryl isocyanides bearing free‐base and metallo‐porphyrins were prepared and polymerized with a Pd–Pt μ‐ethynediyl complex as the initiator to give polymers with narrow polydispersity indices. The molecular weights of the resulting polymers were precisely controlled by the initial feed ratio of the porphyrin monomer to the initiator. The UV–VIS spectra suggested that the porphyrin pendants are regularly arranged to form stacked columns. Metallo‐porphyrin polymers were also prepared by reacting free‐base porphyrin polymers with metal salts. The successive reactions of free‐base and zinc‐porphyrin monomers resulted in the formation of diblock polymers. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 585–595, 2006  相似文献   
25.
With the purpose to use for therapeutic drug monitoring (TDM), blood concentrations of tobramycin (TOB) in each patient were measured by radioimmunoassay (RIA). A RIA kit of TOB (Clinical assay-Japan Travenol) was evaluated for precision and recovery, in that partial improvement of the method was made, in order to measure low level of TOB. The RIA was compared with high-performance-liquid-chromatography (HPLC), bioassay (BA) and 2 kinds of enzyme immunoassay (EIA) (EMIT and SLFIA). The RIA of TOB revealed high precision (1.8-2.4% in C.V.) and high reproducibility (5.0-6.9% in C.V.). It was found that this RIA kit can be used for measuring low level of serum TOB concentrations by a modification of the method. The total range of measurable blood level is from 0.1 to 16.0 micrograms/ml. The nearly one to one correspondence was observed between RIA and other 4 methods, when 154 samples obtained from 18 cases were measured. A representative case of TDM for TOB was demonstrated, in which predicted concentrations agreed fairly well with actual measured values at steady state. It was concluded that the RIA kit is useful for clinical application of TDM for the adequate dosage regimen of TOB. Modification of the method for rapid assay of a small number of samples will increase the clinical usefulness.  相似文献   
26.
27.
New triterpenes from a Chinese medicine, goreishi   总被引:1,自引:0,他引:1  
Besides serratagenic acid, three new ursane-type triterpenes, named goreishic acids I (1), II (2), and III (3), were isolated from a Chinese medicine, Goreishi (the feces of Trogopterus xanthipes Milne-Edwards). The structures of 1, 2 and 3 were respectively determined as 2 alpha,3 beta-dihydroxyursa-12,18-dien-28-oic acid, 2 alpha,3 beta-dihydroxy-23-norursa-12,18-dien-28-oic acid and 2 alpha,3 beta-dihydroxy-24-norursa-12,18-dien-28-oic acid on the basis of spectroscopic evidence.  相似文献   
28.
29.
30.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号