Relaxation processes in glasses of the Ge-As-S system

The internal friction in Ge _x As_{40 ? x} S₆₀ glasses is investigated in the temperature range 100 K-T _g at infralow frequencies (10^?3?10^?1 Hz). It is shown that the concentration dependence of the internal friction of these materials changes as a result of the transformation of the dominant kinetic unit in dissipative processes of the relaxation and nonrelaxation types. It is established tha the change in the mechanism of internal friction in the Ge _x As_{40 ? x} S₆₀ glasses leads to a jump in the activation energy of the α relaxation and to a local minimum in the frequency factor τ₀.     

Regular trends in distribution of substituted benzoic acids between organic solvents and water

The influence of physicochemical properties of organic solvents on the distribution constants of aromatic carboxylic acids between the organic and aqueous phases was examined.     

Algorithms for finding connected separators between antipodal points

A set (or a collection of sets) contained in the Euclidean space Rm is symmetric if it is invariant under the antipodal map. Given a symmetric unicoherent polyhedron X (like an n-dimensional cube or a sphere) and an odd real function f defined on vertices of a certain symmetric triangulation of X, we algorithmically construct a connected symmetric separator of X by choosing a subcollection of the triangulation. Each element of the subcollection contains the vertices v and u such that f(v)f(u)?0.     

Variety of LaSrMnO structures induced by growth conditions and laser irradiation

Crystallographic phase transitions in perovskite-like LaSrMnO metallic oxides are studied. The transitions are induced when internal stresses generated during film synthesis (at temperatures between 450 and 730°C) vary (decrease or increase) upon subsequent irradiation by a KrF laser emitting in the UV range. As the synthesis temperature T _s grows, the rhombohedral-to-orthorhombic phase transition occurs at 650–670°C. The resistivity is shown to be either temperature-independent, ρ(T)=const, at T<T _crit, or varies and reaches a maximum, ρ(T)=ρ_max, at the Curie temperature T _c. Optical transmission spectra taken at photon energies ℏω=0.5–2.5 eV exhibit both a high (0.8–0.9) and low (0.1–0.3) transmission coefficient t, depending on the synthesis temperature. As follows from X-ray diffraction data, the laser irradiation causes a phase transition only in LaSrMnO films grown at T _s<650°C. Phases of different size scales appear: the long-range-order orthorhombic matrix and mesoscopic-range-order rhombohedral clusters are observed in the films grown at T _s=450–550°C and the rhombohedral matrix with orthorhombic clusters, in the films grown at T _s=550–650°C.     

Decrease in the group velocity of a light pulse in the Bose-Einstein condensate of a dilute gas

A semiclassical theory of electromagnetically induced transparency in a Bose-Einstein condensate is considered. A nonlinear Schrödinger equation that describes the interaction of the Bose-Einstein condensate with an electromagnetic field is derived. An analysis of the obtained solutions to this equation demonstrates a decrease in the group velocity of the light pulse.     

Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy

Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si.     

Lasing of iodine in the fullerene-oxygen-iodine system

The possibility of lasing in the fullerene-oxygen-iodine system with optical excitation of fullerene is studied. Laser radiation with an energy of 25 mJ and a pulse duration of 5–10 ms is obtained.