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941.
I. V. Dzedolik 《Technical Physics》2006,51(7):932-937
Conditions for spontaneous symmetry breaking and generation of quasi-particles in an insulator through which an electromagnetic field propagates are considered. The order parameter of the system is determined. The mass spectrum of the quasi-particles is found in the cases of linear and nonlinear propagation through the medium with and without interfaces. 相似文献
942.
Photoelectronic spectra of volume samples of molybdenum, tungsten, and rhenium disilicides are theoretically investigated
as functions of the excitation energy (hv = 12–1486 eV) by the method of linearized attached plane waves. The main contribution
to the spectrum at low (hv = 12–52 eV) and very high (hv = 1486 eV) excitation energies is given by the metal d-states, while
the contribution of the Si p-states is dominant at intermediate excitation energies. An analysis of the calculated results
demonstrates that the main peak of the photoelectronic spectra is displaced by 0.2 eV toward the bottom of the valence band
when going from MoSi2 to WSi2; it is displaced by 0.3 eV when going from WSi2 to ReSi1.75.
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 75–80, July, 2006. 相似文献
943.
944.
V. A. Zayats A. N. Nikolaevskii T. A. Filippenko O. P. Kniga G. A. Tikhonova 《Russian Journal of Applied Chemistry》2006,79(10):1651-1654
Specific features of the initiated oxidation of polyethylene and its low-molecular-weight analogue tridecane, associated with the occurrence of the process in the short-chain mode, were studied. 相似文献
945.
946.
Nanometer-scale Al particles are fabricated and are embedded in a GaAs matrix using molecular beam epitaxial technique. The Al particle is self-assembled on GaAs by supplying an Al molecular beam. The average particle size is found to be 25 nm. The density is 7 × 1010 cm−2 when Al of 6.2 × 1015 atoms/cm2 is supplied on (1 0 0)GaAs at a substrate temperature of 300 °C. Clear hysteresis and plateaus in capacitance-voltage (C-V) curves are found in an Al-embedded sample, whereas monotonic increase of capacitance is obtained in a reference sample having an AlAs layer instead of Al. This difference results from trapping of electrons by the Al particles, suggesting that the particles have metallic character. 相似文献
947.
A. P. Tyutnev R. Sh. Ikhsanov E. L. Grin’ G. P. Safonov A. I. Kononenko A. M. Sorokin I. V. Rudenko 《Polymer Science Series A》2006,48(11):1190-1195
A general theory of the phenomenon of recovered voltage in polymers was considered on the basis of representation of an actual poling process by a discrete set of Debye relaxators. Examples of numerical solution of the direct and inverse problems are given. A correlation expression between intentionally aged polymer specimens and recovered-voltage curves was proposed for use in the assessment of the material state of a polymer under actual service conditions. It was shown that it is sufficient to restrict consideration to three relaxation processes in analysis of the phenomenon. 相似文献
948.
The electrochemical and mechanical properties of nanocomposite solid-state electrolyte membranes deposited using a laser direct-write technique from a suspended solution comprised of an ionic liquid (1,2-dimethyl-3-n-butylimidazolium-bis-trifluoromethanesulfonylimide)-polymer (poly(vinylidene fluoride-co-hexafluoropropylene)) matrix with dispersed nano-particles (TiO2) are reported and discussed. These laser printed nanocomposite solid-state membranes are shown to exhibit the proper electrochemical behavior for ionic liquids while maintaining the strength and flexibility of the polymer matrix. This combination of physical properties and deposition technique makes these deposited nanocomposite membranes ideally suited for use as an electrolyte/separator in Li micro-batteries. Sample Li micro-batteries using these laser printed nanocomposite membranes have been fabricated and their charge/discharge behavior tested, demonstrating the feasibility of using these nanocomposite membranes in Li micro-battery applications. 相似文献
949.
A. Ferreira da Silva I. Pepe S.A. Tomás W.M. de Azevedo R. Ahuja 《Applied Surface Science》2006,252(15):5365-5367
In this paper we present spectroscopic properties of doped and undoped titanium dioxide (TiO2) as nanofilms prepared by the sol-gel process with rhodamine 6G doping and studied by photoacoustic absorption, excitation and emission spectroscopy. The absorption spectra of TiO2 thin films doped with rhodamine 6G at very low concentration during their preparation show two absorption bands, one at 2.3 eV attributed to molecular dimmer formation, which is responsible for the fluorescence quenching of the sample and the other at 3.0 eV attributed to TiO2 absorption, which subsequently yields a strong emission band at 600 nm. The electronic band structure and optical properties of the rutile phase of TiO2 are calculated employing a fully relativistic, full-potential, linearized, augmented plane-wave (FPLAPW) method within the local density approximation (LDA). Comparison of this calculation with experimental data for TiO2 films prepared for undoped sol-gels and by sputtering is performed. 相似文献
950.
Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg0.7Cd0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg0.7Cd0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg0.7Cd0.3Te epilayer. Hall-effect measurements showed that n-Hg0.7Cd0.3Te epilayers were converted to p-Hg0.7Cd0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg1 − xCdxTe epilayers are improved by annealing and that as-grown n-Hg1 − xCdxTe epilayers can be converted to p-Hg1 − xCdxTe epilayers by in situ annealing. 相似文献