Sorption equilibria of CO2 on silica-gels in the presence of water

The sorption equilibria of carbon dioxide on three types of silica gel (SG) with different pore size distributions in the presence of water were studied experimentally using a volumetric method at 275?K with pressures from 0 to 3.7?MPa. Both the pore size distribution of the silica gel and the quantity of pre-sorbed water impact the formation of the CO₂ hydrates. For wet silicon gel A(SG-A) with water loading ratio of 0.75, the highest CO₂ sorption was about 2.5?mmol of CO₂ per gram of dry sorbent at 275?K. Similarly, the highest sorption was about 2.7?mmol for wet SG-B with R _w =0.81. However, CO₂ hydrate did not form on the wet surface of SG-C due to its large pore sizes.     

Synthesis of tetrasubstituted thiophenes from pyridinium 1,4-zwitterionic thiolates and modified activated alkynes

Pyridinium 1,4-zwitterionic thiolates were applied to a formal [3 + 2] annulation reaction with modified activated alkynes, affording various tetrasubstituted thiophenes with aryl, alkenyl, alkyl or silyl group at the special position. The structural modification of alkyne substrates enabled the synthesis of diverse thiophenes to be achieved using the pyridinium 1,4-zwitterionic thiolates as the sulfur-containing building blocks. This approach is metal-free and catalyst-free.     

高压下Al0.77Mn0.19Yb0.04合金准晶T相的形成及结构

利用静高压(4.2GPa)熔态(1300℃)淬火(10~2℃/S)方法,对含稀土的铝锰合金Al_(0.77)Mn_(0.10)Yb_(0.04)进行了研究。首次发现了准晶T相的形成。利用选区透射电子衍射技术,对合金中准晶态的结构对称性进行了观察和分析。根据X射线和电子衍射对其衍射峰进行了指标化。使用扫描电镜和能谱技术进行了成份分析。     

Finite-element calculation of the influence of interdiffusion on eigenstates in a GaAs/Al x Ga1-x As single-quantum-well structure

The influence of interdiffusion on eigenstates in an interdiffusion-induced GaAs/Al_xGa_1-xAs single-quantum-well structure is analysed numerically by the finite element method. In this approach, the confinement potential profile of the interdiffused quantum well structure is nonlinear and is modelled by an error function and, in particular, the nature of the effective mass of an electron is considered. The results show that the number of eigenstates and energy levels varies with the extent of the interdiffusion. Numerical results for the quasi-bound states in the quantum well structure with an applied electric field are also presented.     

优质GaAs/Si和AlGaAs/Si材料的MOCVD生长研究

用自制常压MOCVD装置,在Si衬底上生长GaAs和AlGaAs外延层,在高温去除Si衬底表面氧化膜之后,采用两步法,即低温生长过渡层,再提高温度生长外延层。得到了表面镜面光亮的优质GaAs和AlGaAs外延层。X射线双晶衍射仪测试GaAs外延层,其回摆曲线半峰宽是200孤秒,GaAs和AlGaAs外延层在77K温度下,PL谱半峰宽分别是17meV和24meV。