Micellar core-shell-type acrylic-polyurethane hybrid materials with self-polishing property

Abstract

Marine fouling can be a serious problem in the shipping industry, since it increases the surface roughness of the hull and hence its frictional resistance to its movement through water. Antifouling paint can be defined as preventing the attachment of marine organisms onto surfaces. However, the most commonly used antifouling coating which is the tributyltin-based self-polishing copolymer causes the severe pollution of marine environment. Ammonium salt-based paints include tertiary amines as biocides which have effective biocidal and biodegradable properties without accumulation in the sea environment. However, ammonium salt-based coatings were too sensitive to seawater and became swollen. In this study, polyurethane-acrylic copolymers were synthesized by radical polymerization. These hybrid materials were found to form core–shell structures in aqueous media. Synthesis and properties of copolymers were investigated by Fourier transform-infrared spectrometer, proton-nuclear magnetic resonance, transmission electron microscopy, and dynamic light scattering. The polishing rate of self-polishing copolymer was determined from the reduction in dry film thickness after artificial seawater immersion under a dynamic condition.     

Solvent and pH Effects on the Fluorescence of 7-(Dimethylamino)-2-Fluorenesulfonate

A novel water-soluble solvatochromic molecule, 7-(dimethylamino)-2-fluorenesulfonate (2,7-DAFS), was prepared by a three-step reaction from 2-nitrofluorene in good overall yield. The pH and solvent effects on the UV-VIS absorption and fluorescence spectra of 2,7-DAFS have been studied. Protonation of the dimethylamino group switches the absorption from intramolecular charge-transfer (ICT) to π → π* transition. The ground state pKa value of 2,7-DAFS was determined as 4.51. The fluorescence spectrum of the excited basic form, *(DAFS), shows a structureless single band with a large Stokes shift, whereas that of the acidic form, *(⁺HDAFS), exhibits a structured band with a small Stokes shift. The emission intensities of the basic and acidic forms versus pH/Ho plots show stretched sigmoidal curves and indicate that (1) the rate of deprotonation of *(⁺HDAFS) is comparable to the fluorescence decay of the species, and (2) the efficient proton-induced quenching of *(DAFS) fluorescence occurs. The pKa* was estimated as −1.7 from the fluorescence titration curve. The fluorescence maximum of *(DAFS) is blue-shifted as the polarity of solvent decreases. However, no clear dependency of the emission intensity and spectral half width, and thus fluorescence quantum yield, on the solvent polarity was revealed. It appears that the fluorescence sensitivity of 2,7-DAFS is 15 ∼ 25 times greater than the sensitivity of a widely utilized fluorescent probe, 5-(dimethylamino)-1-naphthalenesulfonate. This higher sensitivity, together with the ease of derivatization, would provide the fluorene-based fluorescent molecules significant advantages for a variety of applications.     

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

We discuss the role of the Al interlayer in the suppression of pinhole formations and also look at the polarity transition of the AlN layers from N-polarity to Al-polarity when this Al interlayer is present. The AlN layers were grown by molecular beam epitaxy on an AlN nucleation layer. A thin Al interlayer was deposited on the initial nucleated AlN layer after the nitridation of the Al-soaked Si (111) substrates. The AlN layer with an Al interlayer showed a relatively smooth surface with a reduced density of pinholes compared with the AlN layer grown without an Al interlayer. In addition, the AlN layer with an Al interlayer showed some stacking faults in the interface between the Si substrate and the A1N layer. We also identify the polarity change of the AlN layer after the insertion of a thin Al interlayer from N-polarity to Al-polarity by chemical etching. A simple model is constructed to explain the polarity change and the pinhole suppression due to the Al interlayer.     

Leader-following consensus criteria for multi-agent systems with time-varying delays and switching interconnection topologies

We consider multi-agent systems with time-varying delays and switching interconnection topologies.By constructing a suitable Lyapunov-Krasovskii functional and using the reciprocally convex approach,new delay-dependent consensus criteria for the systems are established in terms of linear matrix inequalities(LMIs),which can be easily solved by using various effective optimization algorithms.Two numerical examples are given to illustrate the effectiveness of the proposed methods.     

Asymmetrically coupled directed percolation systems

We introduce a dynamical model of coupled directed percolation systems with two particle species. The two species A and B are coupled asymmetrically in that A particles branch B particles, whereas B particles prey on A particles. This model may describe epidemic spreading controlled by reactive immunization agents. We study nonequilibrium phase transitions with attention focused on the multicritical point where both species undergo the absorbing phase transition simultaneously. In one dimension, we find that the inhibitory coupling from B to A is irrelevant and the model belongs to the unidirectionally coupled directed percolation class. On the contrary, a mean-field analysis predicts that the inhibitory coupling is relevant and a new universality appears with a variable dynamic exponent. Numerical simulations on small-world networks confirm our predictions.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.     

Domain growth and aging scaling in coarsening disordered systems

We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E ₀) required to close the band gap decreases with the increasing N and can be approximated by E ₀ = 3.2 / (N ? 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.     

Electric field control of nonvolatile four-state magnetization at room temperature

We find the realization of large converse magnetoelectric (ME) effects at room temperature in a magnetoelectric hexaferrite Ba0.52Sr2.48Co2Fe24O41 single crystal, in which rapid change of electric polarization in low magnetic fields (about 5 mT) is coined to a large ME susceptibility of 3200 ps/m. The modulation of magnetization then reaches up to 0.62μ(B)/f.u. in an electric field of 1.14 MV/m. We find further that four ME states induced by different ME poling exhibit unique, nonvolatile magnetization versus electric field curves, which can be approximately described by an effective free energy with a distinct set of ME coefficients.     

Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications

We propose a selector‐less Pr_0.7Ca_0.3MnO₃ (PCMO) based resistive‐switching RAM (RRAM) for high‐density cross‐point memory array applications. First, we investigate the inhomogeneous barrier with an effective barrier height (Φ_eff), i.e., self‐formed Schottky barrier. In addition, a scalable 4F² selector‐less cross‐point 1 kb RRAM array has been successfully fabricated, demonstrating set, reset, and read operation for high cell efficiency and high‐density memory applications. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A sonochemical-assisted synthesis and annealing temperature effect of La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> nanoparticles

This paper reports on the sonochemical-assisted synthesis of La_0.7Sr_0.3MnO₃ (LSMO) nanoparticles (NPs) which have a single-crystalline perovskite structure. The average particle size of LSMO NPs was controlled from about 40 to 120 nm by changing the annealing temperatures from 750 to 1050°C. The particle size, electrical resistivity, and ferromagnetic transition temperature of LSMO NPs were strongly dependent on the annealing temperature. A substantial decrease in resistivity and an enhancement in the insulator–metal transition temperature were found on increasing the annealing temperature. Furthermore, the enhancement in magnetization and paramagnetic–ferromagnetic (PM–FM) transition temperatures was observed as the annealing temperature increases.