Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

System dependence of the correlation function of IMFs in Ar + Sn at 35 MeV/u

The inclusive reduced velocity correlation functions of the intermediate mass fragments were measured in the reactions of ³⁶Ar + ^112,124Sn at 35 MeV/u. The anti-correlation is observed to be stronger in ³⁶Ar + ¹²⁴Sn system than that in ³⁶Ar + ¹¹²Sn. The difference of the correlation functions between the two reactions is mainly contributed by the particle pairs with high momenta. A three body Coulomb repulsive trajectory model is employed to calculate the emission time scale of the IMFs for the two systems. The time scale is 150 fm/c in ³⁶Ar + ¹¹²Sn and 120 fm/c in the ³⁶Ar + ¹²⁴Sn, respectively.     

Controlling a bunch of multiple filaments by means of a beam diameter

We demonstrate a three orders of magnitude increase and stability in the backscattered fluorescence signal from nitrogen molecules by terawatt femtosecond laser pulse induced air filaments using a new method. The method is based on squeezing the initial beam diameter using a telescope. The effect of laser shot-to-shot fluctuations was included in numerical simulations by a random distribution of the initial intensity in both squeezed and non-squeezed beams. Statistical processing of the simulation results shows that the average diameter of plasma channels as well as the total amount of free electrons generated in a bunch of multiple filaments in air is larger in the squeezed beam. Shot-to-shot stability of the simulated plasma density increases in the squeezed beam. The change of this plasma density with propagation distance is in good qualitative agreement with the change of the range-corrected nitrogen fluorescence signal with distance. PACS 42.65.Jx; 42.60.Jf; 42.68.Ay; 42.68.Wt     

Lot-sizing with fixed charges on stocks: the convex hull

In this paper, we examine a variant of the uncapacitated lot-sizing model of Wagner–Whitin that includes fixed charges on the stocks. Such a model is natural in a production environment where stocking is a complex operation, and appears as a subproblem in more general network design problems.

Linear-programming formulations, a dynamic program, the convex hull of integer solutions and a separation algorithm are presented. All these turn out to be very natural extensions of the corresponding results of Barany et al. (Math. Programming Stud. 22 (1984) 32) for the uncapacitated lot-sizing problem. The convex hull proof is based on showing that an extended facility location formulation is tight and by projecting it onto the original space of variables.     

Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.     

Noetherian PI Hopf algebras are Gorenstein

We prove that every noetherian affine PI Hopf algebra has finite injective dimension, which answers a question of Brown (1998).

     

Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth

1D-nanostructural zinc oxide (ZnO) with different shapes have been synthesized on p-type Si(1 0 0) and glass substrates via vapor phase growth by heating pure zinc powder at temperatures between 480 and 570 °C. The different ZnO nanostructures depend on the substrates and the growth temperatures. Scanning electron microscopy and X-ray diffraction revealed that a well-aligned nanowires array, which are vertical to the substrate of Si(1 0 0) with 18 sides on their heads, but six sides on their stems, has been formed at 480 °C. Raman study on the ZnO nanostructures shows that the coupling strength between electron and phonon determined by the ratio of the second- to the first-order Raman scattering cross-sections declines with decreasing diameter of the nanowires. However, a little changes of the coupling strength in terms of the width of the nanobelts have been observed.     

Diphenylmethane transformations over boron trifluoride modified alumina and silica-alumina

Transformations of diphenylmethane were investigated in a flow system in the presence of alumina and silica-alumina modified with boron trifluoride at atmospheric pressure and elevated temperatures. Hydrogen transfer reaction was observed on addition of tetralin to the substrate stream. This revised version was published online in August 2006 with corrections to the Cover Date.     

Surface free energies of electroless Ni–P based composite coatings

Surface free energy of a solid surface gives a direct measure of intermolecular interactions at interfaces and has a strong influence on adsorption and adhesion behaviour. However few data are available for the surface free energies of electroless Ni–P based composition coatings. In this paper, the electroless Ni–P, Ni–P-surfactant, Ni–Cu–P, Ni–P–PTFE and Ni–Cu–P–PTFE composite coatings were prepared under various coating conditions. The chemical compositions, surface morphology and thickness of the coatings were measured using an energy dispersive X-ray microanalysis (EDX), a scanning electron microscope (SEM) and a digital micrometer respectively. The contact angles of water, diiodomethane and ethylene glycol on the coatings were measured automatically using dataphysics OCA-20 contact angle analyser. The surface free energy of the coatings and their components (e.g. dispersion, polar or acid/base portions) were calculated using various methods. The experimental results showed that the incorporation of surfactant or PTFE particles into Ni–P matrixes has a significant influence on the surface free energy of the coatings, while the incorporation of copper into Ni–P matrixes has no significant influence on the surface free energy of the coatings.