InAs/GaAs (1 1 1)A heteroepitaxial systems

We studied the structural, electrical, and mechanical properties of an InAs thin film grown on GaAs (1 1 1)A substrates by molecular beam epitaxy. In contrast to conventionally used (0 0 1) surfaces, where Stranski–Krastanov growth dominates the highly mismatched heteroepitaxy, layer-by-layer growth of InAs can be established. One of the largest advantages of this unique heteroepitaxial system is that it provides a two-dimensional electron gas system in the near-surface region without the problem of electron depletion. We review the fundamental properties and applications of this unique heteroepitaxial system.     

Two scenarios for phase-transformation in disordered media

The reasons for the existence of various scenarios for structural transformations in disordered condensed media, such as liquids and amorphous substances, where both smeared transformations and sharp first-order transitions may occur, were analyzed. The ratio between the spatial scale of structural correlations and the size of the smallest possible region occupied by a new phase in the matrix of initial modification is the key parameter determining the scenario for equilibrium phase transformations in liquids. In amorphous substances, the experimentally observed transformations occur far from equilibrium, and the possible size of the region occupied by the new phase corresponds to the minimal nucleus size. For some amorphous solids, quantitative analysis of the transformation width was carried out and the main classes of covalent substances, in which the smeared or sharp transitions occur, were revealed. Specific features of the interparticle interactions determining various transformation scenarios are discussed.     

玻璃的冲击损伤

冲蚀过程是一个与颗粒反复冲击物体表面而移除物质相关的表面现象．本文研究了玻璃的冲蚀坑的几何尺寸和体积，给出了冲蚀移除物质如何依赖于颗粒流动速度、颗粒尺寸和冲击角的理论关系．通过理论与实验结果相比较，定义了一定冲蚀坑尺度的有效域．     

On the Bavrin Integro-Differential Operators and Their Applications to Solution of Functional Equations

We construct a multiplicative group structure in the class of integro-differential operators specific for a polydisk which was introduced by I. I. Bavrin. We indicate two applications of these operators to solution of functional equations.     

Submicrometric Displacement and Vibration Measurement Using Optical Feedback in a Fiber Laser

A very simple and efficient technique for the remote sensing of a noncooperative target is presented. This technique is based on the frequency-shifted reinjection of light in a class B laser. Ytterbium- and erbium-doped fiber lasers have both been used to measure displacements with a submicrometric resolution and the vibration power spectrum of an object.     

Preparation and properties of homogeneous V2O5-SiO2 xerogel composite based on interpenetrating polymer network

In this paper, we report the conducting and electrochemical properties of a homogeneous V₂O₅-SiO₂ xerogel composite obtained from the simultaneous polymerization in both inorganic components (Si-O and V-O based polymers) forming an interpenetrating polymer network, where a mutual “solubility” due to cross-links and entanglements was observed. The presence of V₂O₅ inside the silica matrix has a strong effect on electrical conductivity; measurements showed room temperature conductivity almost 1000 times higher than what is found in the literature. In addition, the electrochemical behavior is quite similar to that found in V₂O₅ xerogel. Moreover, the effects of thermal treatment on the conducting and electrochemical properties were investigated. It was found that both properties were improved with no significant effect on V₂O₅ xerogel layered structure.     

Application of directed metallation in synthesis. Part 3: Studies in the synthesis of (±)-semivioxanthin and its analogues

The synthesis of several analogues of (±)-semivioxanthin including five thiophene analogues, using directed metalation are reported. The strategy consisted of the synthesis of functionalized naphthalene or benzo[b]thiophene as building blocks followed by annelation of the pyrone.     

Mechanism of the D’yakonov-Perel’ spin relaxation in frequent electron-electron collisions in a quantum well with a finite width

A precession mechanism of spin relaxation of conduction electrons in a square quantum well is analyzed. The dependence of the spin relaxation time on the width of a quantum well and the height of its barriers is calculated under the assumption that the electron-electron collisions dominate over other processes of carrier scattering.