Substituted bismuth vanadates and chromates: New aspects

The work is devoted to the synthesis and attestation of a number of substituted vanadates and chromates of bismuth. For bismuth vanadates of the BIMEVOX family, the homogeneity regions of the Bi₄V_{2 – x}Cr _x O_{11 ± d} solid solutions have been refined, the features of the structure change of the compounds with increasing chromium content and changing temperature have been noted, and the powders and ceramics have been studied by electron microscopy. For the first time, as an impurity, an individually substituted bismuth chromate of the composition Substituted bismuth chromate of the Bi₁₃Cr_{5 – y}V _y O_{34.5 – d} (y = 0.95 ± 0.05) composition has been detected for the first time as an impurity and synthesized as an individual compound, which has been characterized by X-ray diffraction, electron microscopy, chemical analysis, and photoelectron spectroscopy data; its homogeneity range has been determined, and electroconductive characteristics have been studied.     

Thermal properties of hafnium(IV) and zirconium(IV) β-diketonates

Five volatile hafnium(IV) and zirconium(IV) β-diketonates: hafnium(IV) acetylacetonate, hafnium(IV) trifluoroacetylacetonate, hafnium(IV) pivaloyltrifluoroacetonate, hafnium(IV) 2,2,6,6-tetramethylheptane-3,5-dionate and zirconium(IV) 2,2,6,6-tetramethylheptane-3,5-dionate were obtained, purified and identified. Thermal behavior of solid compounds was investigated by thermogravimetry (TG) and differential scanning calorimetry (DSC) in helium atmosphere and in vacuum. DSC method was also used for definition of thermodynamic characteristics of melting processes. Using the static method with quartz membrane zero-manometer and the flow method the temperature dependencies of saturated vapor pressure for hafnium(IV) complexes was obtained. The standard thermodynamic characteristics ΔH _T⁰ and ΔS _T⁰ of sublimation and evaporation processes were calculated from the temperature dependences of saturated vapor pressure.     

Chemical Composition and Structure of Thin Films Produced by Chemical Vapor Deposition

This paper reports results from studies of the chemical composition and structure of semiconducting, dielectric, and metallic films produced from molecular precursors by the chemical vapor deposition method. A study was made of films of zinc sulfides, mixed copper, cadmium, and zinc sulfides, boron nitride, carbonitride, silicon carbonitride, and iridium films. It is shown that the use of metal compounds with different ligands (zinc and manganese) enables production of zinc sulfide films in which manganese ions are uniformly incorporated into the zinc sulfide crystal lattice to substitute zinc at the lattice sites. For the films of simple and mixed cadmium, copper, and zinc sulfides, the film structure depends on the type of substrate. The thin layers of mixed cadmium and zinc sulfides are asubstitution solution with a hexagonal structure. The thin layers of boron nitride produced from borazine exhibit a nanocrystalline structure and are a mixture of cubic and hexagonal phases. Composite layers were produced from alkylamine boranes and their mixtures with ammonia. Depending on synthesis conditions, the layers are mixtures of hexagonal boron nitride, carbide, and carbonitride or pure boron nitride. Using silyl derivatives of asymmetric dimethylhydrazine containing Si—N and C—N bonds in the starting molecule, we produced silicon carbonitride films whose crystal habit belongs to a tetragonal structure with lattice parameters a = 9.6 and c = 6.4 . The iridium films obtained by thermal decomposition of iridium trisacetylacetonate(III) on quartz substrates in the presence of hydrogen have a polycrystalline structure with crystallite sizes of 50 to 500 . A method for determining grainsize composition was proposed, and grain shapes for the iridium films were analyzed. The influence of substrate temperature on the internal microstructure and growth of the iridium films is demonstrated. At the iridium–substrate interface, a transition layer forms, whose composition depends on the substrate material and deposition conditions.