Effects of Ti content on the optical and structural properties of the Ti-doped ZnO nanoparticles

This study investigates the effect of Ti content on the optical and structural properties of the Ti-doped ZnO (Ti_xZn_1?xO) nanoparticles by x-ray diffraction, scanning electron microscopy, photoluminescence and Raman scattering measurements. A dependence of luminescent properties and crystal structure upon Ti content has been found. The band-edge-luminescence (BEL) intensity of Ti_0.10Zn_0.90O at room temperature was nearly 1.7 times higher than that of ZnO. The enhanced BEL intensity is attributed to a decrease in the oxygen-vacancy density. However, the lower BEL intensity of Ti_0.15Zn_0.85O than Ti_0.10Zn_0.90O is attributed to an increase in the probability of nonradiative recombination. In addition, the intensity of the x-ray diffraction peaks remarkably decreases with increasing Ti content, suggesting weakened crystallinity.     

Exposure assessment of process by-product nanoparticles released during the preventive maintenance of semiconductor fabrication facilities

This study characterized the process by-product particles (mostly nanoparticles) released during the preventive maintenance of semiconductor fabrication facilities, such as chemical mechanical planarization (CMP), plasma-enhanced chemical vapor deposition (PECVD), and ion implantation. Manual sampling and real-time measurements with direct reading instruments were conducted to assess the exposure levels of nanoparticles and their physical and chemical properties. Significant amount of nanoparticles were observed in the breathing zone of the workers during the maintenance of the PECVD and ion implanters with the peak number concentrations as high as 6,470,000 and 65,444 #/cm³, respectively, indicating that the deposited residual chemicals in the reaction chambers were released as airborne nanoparticles by the maintenance activities. In contrast, nanoparticles released during the maintenance of the local scrubber, CMP, and replacing CMP slurry drums were insignificant. Causes of the particle release were discussed and suggestions were made to mitigate the nanoparticle release and reduce the exposure levels.     

纳米尺寸的ZnO晶体高压相变的拉曼散射研究(英文)

Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…     

The effect of ITO films thickness on the properties of flexible organic light emitting diode

Indium tin oxide (ITO) thin films were deposited on cyclic olefin copolymer substrate at room temperature by an inverse target sputtering system. The crystal structure and the surface morphology of the deposited ITO films were examined by X-ray diffraction and atomic force microscopy, separately. The electrical properties of the conductive films were explored by four-point probing. Visible spectrometer was used to measure the optical properties of ITO-coated films. The performance of the flexible organic light emitting diode device with different thickness anode was investigated in this study.     

Active dielectric metasurface based on phase‐change medium

We propose all‐dielectric metasurfaces that can be actively re‐configured using the phase‐change material Ge₂Sb₂Te₅ (GST) alloy. With selectively controlled phase transitions on the composing GST elements, metasurfaces can be tailored to exhibit varied functionalities. Using phase‐change GST rod as the basic building block, we have modelled metamolecules with tunable optical response when phase change occurs on select constituent GST rods. Tunable gradient metasurfaces can be realized with variable supercell period consisting of different patterns of the GST rods in their amorphous and crystalline states. Simulation results indicate a range of functions can be delivered, including multilevel signal modulating, near‐field coupling of GST rods, and anomalous reflection angle controlling. This work opens up a new space in exploring active meta‐devices with broader applications that cannot be achieved in their passive counterparts with permanent properties once fabricated.

     

Entropic criterion for model selection

Model or variable selection is usually achieved through ranking models according to the increasing order of preference. One of methods is applying Kullback–Leibler distance or relative entropy as a selection criterion. Yet that will raise two questions, why use this criterion and are there any other criteria. Besides, conventional approaches require a reference prior, which is usually difficult to get. Following the logic of inductive inference proposed by Caticha [Relative entropy and inductive inference, in: G. Erickson, Y. Zhai (Eds.), Bayesian Inference and Maximum Entropy Methods in Science and Engineering, AIP Conference Proceedings, vol. 707, 2004 (available from arXiv.org/abs/physics/0311093)], we show relative entropy to be a unique criterion, which requires no prior information and can be applied to different fields. We examine this criterion by considering a physical problem, simple fluids, and results are promising.     

Magnetic properties of electroless-deposited Ni and Ni-NiO core-shell nano-arrays

Ni and Ni-NiO core-shell nano-arrays were fabricated by means of electroless deposition, where the latter was covered by a NiO shell of ∼10 nm by annealing the former at 350 °C for 30 min in an atmospheric condition. HRTEM showed that the NiO shell was developed at the expense of Ni at the array's surface. Ferromagnetic ordering of the Ni-NiO arrays was found to be suppressed compared with those of the less oxidized reference Ni arrays. This is attributed to the screening effect of the NiO shell, and weak ferromagnetism of inner Ni arrays resulted from the development of the NiO. X-ray absorption spectrum reveals that the reference Ni is partially oxidized. Also, X-ray magnetic circular dichroism suggests that the magnetic suppression of the Ni-NiO arrays is associated with a reduced spin moment.     

Energy limits imposed by two-photon absorption for pulse amplification in high-power semiconductor optical amplifiers

We study the combined effects of dynamic gain saturation and two-photon absorption on the amplification of short pulses in semiconductor optical amplifiers and show that two-photon absorption can saturate the amplifier gain and limit the output pulse energies even for amplifiers with large gain saturation energies. We discuss the upper limits for the pulse energies obtainable from semiconductor optical amplifiers in the presence of two-photon absorption and show that for single transverse mode waveguide amplifiers these upper limits can range from values as small as a few picojoules to several hundred picojoules for pulse widths in the 0.5 ps to 20 ps range, respectively.     

Improvement of <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Si photodiodes by embedding of silver nanoparticles

The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P_Ag/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P_Ag/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.