Search for anomalous interaction mean free paths of charge, 2≦Z≦18 projectile fragments in emulsions exposed to 1.8 A GeV40Ar ions

⁴⁰Ar-emulsion interactions are studied, to investigate the question of anomalons, in twoG- 5 emulsion stacks. In about 4600 primary interactions, projectile fragments of Z≧2 for all generations have been followed until they interact or leave the stack. After careful estimation of charges of these fragments, variation of their mean free paths is studied as a function of distance from the preceding interaction. Generation effect,N _h dependence and production angle effect are investigated. In addition multi-chain events are analysed separately. Our results do not show anomalons at the 6% level and are consistent with non-occurrence of anomalons. However, this experiment is not sensitive enough to rule out anomalons (with a mfp of the order of 2 to 3 cm) produced at about 1% (or less) level.     

Mid-infrared supercontinuum generation to 4.5 microm in ZBLAN fluoride fibers by nanosecond diode pumping

A mid-infrared supercontinuum (SC) is generated in ZBLAN (ZrF4-BaF2-LaF3-AlF3-NaF...) fluoride fibers from amplified nanosecond laser diode pulses with a continuous spectrum from approximately 0.8 microm to beyond 4.5 microm. The SC has an average power of approximately 23 mW, a pump-to-SC power conversion efficiency exceeding 50%, and a spectral power density of approximately -20 dBm/nm over a large fraction of the spectrum. The SC generation is initiated by the breakup of nanosecond laser diode pulses into femtosecond pulses through modulation instability, and the spectrum is then broadened primarily through fiber nonlinearities in approximately 2-7 m lengths of ZBLAN fiber. The SC long-wavelength edge is consistent with the intrinsic ZBLAN material absorption.     

Electrical conduction and optical properties of amorphous (Sb2Se3)100−xSnx thin films

The variation of DC electrical conductivity and the optical properties of thermally evaporated a- (Sb₂Se₃)_100−xSn_x thin films with temperature have been studied. It is found that the thermal activation energy decreases, while the optical gap first increases (up to x=1) and then decreases, with the increase in Sn content. These results have been explained by taking into consideration the structural modifications induced by the incorporation of Sn into the parent alloy. The variation in the conductivity prefactor (σ_o) with Sn addition indicates a change in the dominant conduction transport mechanism from extended states to localized states. An experimental correlation between the activation energy and the pre-exponential factor has been observed, indicating the validity of Meyer–Neldel rule in the studied samples.     

Measurement of transverse vibrations/visualization of mode shapes in square plate by using digital speckle pattern interferometry and wavelet transform

New filtering scheme is investigated and implemented on digital speckle pattern interferometric fringes to enhance the signal-to-noise ratio (SNR) in the speckle interferograms. To establish the potential of new filtering scheme the experiment was conducted on the vibrating cantilever beam. Experimental results revealed that the new filtering scheme is more powerful than other known filtering schemes (Kumar et al. Opt Laser Eng 2004;41:81–93. Kumar et al. Opt Laser Technol 2001;33:567–571. Shakher et al. Opt Eng 2002;41:176–180. Shakher et al. Proceedings ICICS, Singapore, 9–12 September 1997, p. 953–956. Bowler et al. Proceedings of IEE second international conference on image processing, London, 1986, p. 24–26. Lim. Opt Eng 1981;20:670–678. Devila et al. J Mod Opt 1995;42:1795–1804; Kaufmann et al. Opt Eng 1996;35:9–14). The new scheme reduced the speckle noise and improved SNR in speckle interferograms. Further, the new investigated filtering scheme is implemented to study the mode shapes of square plates under two different boundary conditions. In the first condition all the edges of the square plate were fixed while in the second condition two adjacent edges were fixed and the remaining two edges were free. From the experimental results it is clear that the mode shapes are more distinctly visible with the implementation of the new filtering scheme as compared to other known schemes. Under both the boundary conditions the recorded resonance frequencies were compared with the calculated values of resonance frequencies based on classical theory. The results obtained form DSPI show good agreement with classical theory.     

A DFT+U study of the catalytic activity of lanthanum nickelate

A density functional theory + Hubbard U (DFT+U) method is implemented to investigate the catalytic activity of lanthanum nickelate (LaNiO₃) for oxygen reduction reaction. Comparison of the surface energies of different LaNiO₃ surfaces shows that {001} surface has the lowest surface energy and hence maximum stability. Two possible terminations of the {001} surface namely LaO and NiO₂ are considered to carry out all our DFT calculations. Calculation of bond lengths of the atoms near the surface and adsorption energies for the reaction intermediates revealed that LaO terminated {001} surface is unstable for the process of OOH adsorption and hence not preferred for the oxygen reduction reaction. However, NiO₂ terminated {001} surface shows excellent catalytic activity for adsorption of all the reaction intermediates and hence is a favourable surface for reactions to occur. Superiority of the NiO₂ terminated {001} surface as catalyst over the LaO terminated one, is also confirmed from the total and partial density of states of the surfaces in presence of the adsorbates, which also shows that the desorption rate of the reaction intermediates is low in case of LaO terminated {001} surface compared to the NiO₂ terminated one.     

Hydrogen atom abstraction from Piperazine by hydroxyl radical: a theoretical investigation

Dual level of quantum mechanical calculations have been carried out for hydrogen abstraction from Piperazine [HN(CH₂CH₂)₂NH] initiated by OH radical. Geometry optimisation and frequency calculations of all species involved in the titled reaction have been performed at M06-2X/6-31+G(d,p) level of theory. For the accuracy in the thermochemistry and kinetics data, single-point energy calculations have been further carried out at coupled cluster CCSD(T) method along with 6-311G(d,p) basis set. An energy profile diagram for the reaction has been plotted along with pre-reactive and post-reactive complexes at entrance and exit channels. Intrinsic reaction coordinates (IRCs) calculations have been performed for identification of real transition states that connect it via reactant to product. Our result shows that the H-atom abstraction takes place from the C–H position of Piperazine. The rate constant is calculated using canonical transition state theory (CTST) is found to be 2.86 × 10^?10 cm³ molecule^?1 s^?1 which is in good agreement with the reported experimental rate constant (2.38 ± 0.28) × 10^?10 cm³ molecule^?1 s^?1 at 298 K. We have also reported rate constant for the temperature range 300–500 K. Using group-balance isodesmic reaction, the standard enthalpies of formation for Piperazine and product radicals generated by hydrogen abstraction are reported. The branching ratios for both reaction channel (i.e. H-abstraction from –CH₂ and –NH position of Piperazine) are found to be 93% and 7%, respectively. The calculated atmospheric life time of Piperazine is found to be 0.97 hour.     

Thickness-dependent electrical and optical properties of Ge8Sb2Te11 thin films

The amorphous Ge₈Sb₂Te₁₁thin films with varying thickness are thermally deposited on well-cleaned glass substrate from its polycrystalline bulk. Absence of any sharp peak confirms the amorphous nature of deposited films. Thickness-dependent electrical and optical properties including dc-activation energy, sheet resistivity, optical band gap, band tailing parameter, etc. of Ge₈Sb₂Te₁₁thin films have been studied. The optical parameters have been calculated from transmission, reflection and absorbance data in the spectral range of 200–1100 nm. It has been found that optical band gap and band tailing parameter decreases with the increase in Ge₈Sb₂Te₁₁thin films thickness. The dc-activation energy and sheet resistivity decreases while the crystallization temperature of the amorphous Ge₈Sb₂Te₁₁ films increases with the increase in thickness of the films. The decrease of the sheet resistivity has been substantiated quantitatively using the classical size-effect theory. These results have been explained on the basis of rearrangements of defects and disorders in the amorphous chalcogenide system.