首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   623871篇
  免费   6255篇
  国内免费   2023篇
化学   315310篇
晶体学   9175篇
力学   30467篇
综合类   16篇
数学   95721篇
物理学   181460篇
  2021年   4558篇
  2020年   5145篇
  2019年   5568篇
  2018年   16674篇
  2017年   16481篇
  2016年   16478篇
  2015年   7612篇
  2014年   10847篇
  2013年   25782篇
  2012年   22765篇
  2011年   33150篇
  2010年   21943篇
  2009年   22139篇
  2008年   27892篇
  2007年   29535篇
  2006年   20467篇
  2005年   19309篇
  2004年   18169篇
  2003年   16713篇
  2002年   15543篇
  2001年   16845篇
  2000年   12825篇
  1999年   9955篇
  1998年   8352篇
  1997年   8061篇
  1996年   7858篇
  1995年   7060篇
  1994年   6919篇
  1993年   6669篇
  1992年   7473篇
  1991年   7459篇
  1990年   7215篇
  1989年   6974篇
  1988年   6985篇
  1987年   6895篇
  1986年   6473篇
  1985年   8462篇
  1984年   8620篇
  1983年   7125篇
  1982年   7226篇
  1981年   7074篇
  1980年   6665篇
  1979年   7201篇
  1978年   7343篇
  1977年   7161篇
  1976年   7112篇
  1975年   6684篇
  1974年   6635篇
  1973年   6813篇
  1972年   4728篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
21.

A method for calculating the parameters of formation of vacancies in crystals formed by spherically symmetrical atoms was developed. Both quantum effects at low temperatures and the possibility of the delocalization of atoms at high temperatures were studied. The parameters of formation of vacancies in carbon subgroup element crystals C-diam, Si, Ge, α-Sn, and Pb were calculated. The inclusion of the delocalization of atoms was shown to increase the enthalpy, entropy, and volume of vacancy formation. At low temperatures, the parameters of vacancy formation were found to depend strongly on the temperature, and the entropy of vacancy formation became negative. At high temperatures, close agreement with experimental data and theoretical estimates reported by other authors was obtained. The temperature dependence of vacancy parameters was studied for diamond heated isobarically from 100 to 4500 K. The applicability scope of the Arrhenius equation with a temperature-independent activation energy is discussed. The validity of the “compensation rule” (correlation between the entropy and enthalpy of vacancy formation) was demonstrated. It was also shown that the volume and entropy of vacancy formation were correlated over the whole temperature range studied.

  相似文献   
22.
23.
    
The diversity of products in the reaction of diethyl azodicarboxylate (DEAD)/diisopropyl azodicarboxylate (DIAD) and activated acetylenes with PIII compounds bearing oxygen or nitrogen substituents is discussed. New findings that are useful in understanding the nature of intermediates involved in the Mitsunobu reaction are highlighted. X-ray structures of two new compounds (2-t-Bu-4-MeC6H3O)P (μ-N-t-Bu)2P+[(NH-t-Bu)N[(CO2]-i-Pr)(HNCO2-i-Pr)]](Cl-)(2-t-Bu-4-MeC6H3OH)(23)and [CH2(6-t-Bu-4-Me-C6H2O)2P(O)C(CO2Me)C-(CO2Me)CClNC(O)Cl] (33) are also reported. The structure of23 is close to one of the intermediates proposed in the Mitsunobu reaction.  相似文献   
24.
Considering the importance of the X-ray production cross sections for the determination of the element concentrations in a given material, we have measured them experimentally for Al Si, Sc, Ti, V, Fe, Co, Ni and Cu bombarded by protons with energies ranging from 40 to 180 keV. This revised version was published online in July 2006 with corrections to the Cover Date.  相似文献   
25.
26.
We consider the plane-strain buckling of a cylindrical shellof arbitrary thickness which is made of a Varga material andis subjected to an external hydrostatic pressure on its outersurface. The WKB method is used to solve the eigenvalue problemthat results from the linear bifurcation analysis. We show thatthe circular cross-section buckles into a non-circular shapeat a value of µ1 which depends on A1/A2 and a mode number,where A1 and A2 are the undeformed inner and outer radii, andµ1 is the ratio of the deformed inner radius to A1. Inthe large mode number limit, we find that the dependence ofµ1 on A1/A2 has a boundary layer structure: it is constantover almost the entire region of 0 < A1/A2 < 1 and decreasessharply from this constant value to unity as A1/A2 tends tounity. Our asymptotic results for A1 – 1 = O(1) and A1– 1 = O(1/n) are shown to agree with the numerical resultsobtained by using the compound matrix method.  相似文献   
27.
28.
We present all-atom molecular dynamics simulations ofn-hexane on the basal plane of graphite at monolayer and multilayer coverages. In keeping with experimental data, we find the presence of ordered adsorbed layers both at single monolayer coverage and when the adsorbed layer coexists with excess liquid adsorbate. Using a simulation method that does not impose any particular periodicity on the adsorbed layer, we quantitatively compare our results to the results of neutron diffraction experiments and find a structural transition from a uniaxially incommensurate lattice to a fully commensurate structure on increasing the coverage from a monolayer to a multilayer. The zig-zag backbone planes of all the alkane molecules lie parallel to the graphite surface at the multilayer coverage, while a few molecules are observed to attain the perpendicular orientation at monolayer coverage. Dedicated to Professor C N R Rao on his 70th birthday  相似文献   
29.
30.
A one-dimensional bulk reaction model for the oxidation of nickeltitanium is formulated, with preferential oxidation of titaniumbeing included. The modelling is directed at the better understandingof the dominant mechanisms involved in the oxidation processand their significance for the biocompatibility of the alloy.Two different regimes for the relative diffusivities of oxygenand the metals are investigated. By assuming fast bulk reactions,different asymptotic structures emerge in different parameterregimes and the resulting models take the form of moving boundaryproblems. Different profiles of nickel concentration are obtained:in particular a nickel-rich layer (observed in practice) ispresent below the oxide/metal interface for the case when oxygenand the metals diffuse at comparable rates.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号