Observation of reduced heat transport inside the magnetic island O point in the large helical device

Evidence for a reduction of heat transport inside the magnetic island O point is observed from the propagation of a cold pulse produced by a tracer encapsulated solid pellet in the Large Helical Device. A small peak and slow propagation of the cold pulse are observed inside the island. A significant result is that electron heat diffusivity inside the island is estimated to be 0.2 m(2)/s which is smaller than that outside the island by an order of magnitude.     

Common-path achromatic interferometer-coronagraph: nulling of polychromatic light

A three-dimensional common-path interferometer is proposed, which can achromatically null out an on-axis source while it maintains the detectability of an off-axis source. A geometric phase in the three-dimensional interferometer introduces an achromatic pi-phase shift to the light from the on-axis source, such that destructive interference nulls out the axial light at one of the ports of the interferometer. Light from the off-axis source, which is exempt from the pi-phase shift, comes out from both ports with equal intensity. The common-path scheme makes the system highly immune to environmental disturbances.     

Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

In order to fabricate Cu₂ZnSnS₄ thin films, hybrid sputtering system with two sputter sources and two effusion cells is used. The Cu₂ZnSnS₄ films are fabricated by the sequential deposition of metal elements and annealing in S flux, varying the substrate temperature. The Cu₂ZnSnS₄ films with stoichiometric composition are obtained at the substrate temperature up to 400 °C, whereas the film composition becomes quite Zn-pool at the substrate temperature above 450 °C. The Cu₂ZnSnS₄ film shows p-type conductivity, and the optical absorption coefficient and the band gap of the Cu₂ZnSnS₄ film prepared in this experiment are suitable for fabricating a thin film solar cell.     

Real-time monitoring of the desorption process of chlorine-covered Si(111)-‘1×1’ surface with second-harmonic generation

To elucidate the fundamental process underlying the semiconductor surface fabrication, isothermal desorption from a Cl/Si(111)-‘1×1’ surface was monitored by means of second-harmonic generation with 1064 nm light. During the desorption, surface Cl-coverages were obtained in real time. The temperature dependence of the desorption rates revealed that the energy barrier against chloride desorption is 2.1 eV. A very slow second phase in the recovery of the second-harmonic intensity is associated with reconstruction of 7×7 DAS structure following the desorption. The activation energy for the reconstruction was 2.4 eV.     

Coexistence of solvated electrons and solvent valence anions in negatively charged acetonitrile clusters, (CH3CN)-n(n=10-100)

Anion photoelectron spectroscopy of acetonitrile cluster anions, (CH3CN)(-)(n) (n=10-100), successfully demonstrates the competitive coexistence of two different anionic species: a solvated electron and a solvent-bound valence anion. The distinctly different nature of these anions is revealed by hole-burning-type photoelectron spectroscopy and relative photodetachment cross section measurements. This unusual coexistence is attributed to the closely lying nature of their anionic states at just the number of solvent molecules sufficient to almost complete the first solvation layer.     

Measurement of Optical Constants of CVD-Diamond for Short-Wavelength Far-Infrared Lasers

A diagnostic system using short-wavelength far-infrared (FIR) lasers (40–70 m in wavelength) is now being developed for high density and large volume plasmas. In the wavelength region, a CVD-diamond is the excellent materials for optical windows of the laser and the plasma vessel and beam splitters of a multichannel interferometer. To design these optical elements, the optical constants (refractive index n, absorption coefficient and transmissivity T) of the CVD-diamond have been measured precisely by using FIR lasers of 48-, 57- and 71-m in wavelength. As an example, the result for 57.1511 m light is n = 2.383(1) ± 0.002, = 0.19 ± 0.05 cm^-1 and T = 97.5 ± 1.5% at 1.023 mm in thickness.     

Quasienergy anholonomy and its application to adiabatic quantum state manipulation

The parametric dependence of a quantum map under the influence of a rank-1 perturbation is investigated. While the Floquet operator of the map and its spectrum have a common period with respect to the perturbation strength lambda, we show an example in which none of the quasienergies nor the eigenvectors obey the same period: After a periodic increment of lambda, the quasienergy arrives at the nearest higher one, instead of the initial one, exhibiting an anholonomy, which governs another anholonomy of the eigenvectors. An application to quantum state manipulations is outlined.     

Terahertz-wave generation in a conventional optical fiber

We theoretically propose surface-emitted and collinear phase-matched terahertz (THz)-wave generation in a conventional optical fiber. The third-order nonlinear effect, four-wave mixing (FWM), is used to generate THz waves in an optical fiber. Surface-emitted THz-wave generation via FWM is realized using a single-mode fiber. Perfect phase matching is obtained at ~800 nm and 1.5 microm pumping, and it follows that third-order polarization in an optical fiber has the same phase at any point. In this situation, the optical fiber acts like a phased array antenna of the THz wave. Collinear phase-matching THz waves are obtained under the same conditions as for surface-emitted THz waves, and the THz wave is propagated in the silica cladding of the optical fiber. This is a promising method for realizing a reasonable THz-wave source.     

Silicon nanowire grid polarizer for very deep ultraviolet fabricated from a shear-aligned diblock copolymer template

A silicon (Si) nanowire grid ultraviolet (UV) transmission polarizer has been fabricated, and its performance was measured over the visible to deep UV range. A cylinder-forming polystyrene-b-poly(hexylmethacrylate) diblock copolymer was coated onto an amorphous Si layer supported on a fused silica substrate, then shear aligned and employed as a mask for reactive-ion etching, resulting in a Si grid of 33 nm period and multi-centimeter-squared area. Due to the high plasma frequency and UV reflectance of the deposited Si, this nanowire grid was able to polarize light down into the deep UV, including 193 nm.