Synthesis of 5-polyfluoroalkyl-4-( p -tolyl-sulfonyl)pyrazoles and 4-polyfluoroalkyl-5-( p -tolylsulfonyl)pyrimidines from 1-dimethylamino-2-( p -tolylsulfonyl)-polyfluoro-1-alken-3-ones

1-Dimethylamino-2-(p-tolylsulfonyl)polyfluoro-1-alken-3-ones were obtained from hydrates of 3,3,3-trifluoro-1-(p-tolylsulfonyl)-2-propanone and 3,3,4,4,5,5-hexafluoro-1-(p-tolylsulfonyl)-2-pentanone under conditions of the Vilsmeier-Haack-Arnold reaction. The analogous reaction of 3,3-difluoro-1-(p-tolylsulfonyl)-2-propanone hydrate leads to 3-chloro-1-dimethylamino-4,4-difluoro-2-(p-tolylsulfonyl)-1,3-butadiene. The feasibility of using 1-dimethylamino-2-(p-tolylsulfonyl)-polyfluoro-1-alken-3-ones in reactions with nitrogen binucleophiles has been demonstrated for the regioselective synthesis of pyrazoles and pyrimidines. The structure of 1-phenyl-4-(p-tolylsulfonyl)-5-trifluoromethyl-1H-pyrazole was confirmed by X-ray diffraction structural analysis. __________ Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 7, pp. 1052–1058, July, 2007.     

Growth of sapphire crystals for optoelectronics from alumina in a protective medium

This paper reports on the results obtained during the development of the technological process of growth of sapphire crystals for optoelectronics through horizontal directional crystallization in a gaseous argon medium at a pressure of 800 mmHg. The sapphire crystals intended for the use in optoelectronics have been grown from purified molten alumina according to the authors’ technology. It has been demonstrated that, under conditions of a high temperature gradient across the crystallization front and at a low content of reducing components (H₂, CO) in the growth medium, it is possible to grow sapphire crystals satisfying the requirements of optoelectronics.