Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

Deep-level transient spectroscopy (D.L.T.S.) has been applied to the determination of defects in ion implanted silicon. Preliminary results concerning defects introduced by 130 KeV phosphorous ion implantation are described. Four electron traps are found: atE _c -0.21 eV,E _c -0.39 eV,E _c -0.52 eV andE _c -0.58 eV and their cross-sections estimated. The annealing behaviour in the range 450–800°C of these traps is described. Work supported in part by the Institute of Physics, Polish Academy of Science, Warsaw. Laboratoire associé au C.N.R.S.     

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi-level pinning at the molecule-metal interface

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices, and we examine the extent to which the nature of the pi end group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. Self-assembled monolayers of alkyl chains (different chain lengths from 6 to 15 methylene groups) functionalized by phenyl, anthracene, pyrene, ethylene dioxythiophene, ethylene dioxyphenyl, thiophene, terthiophene, and quaterthiophene were synthesized and characterized by contact angle measurements, ellipsometry, Fourier transform infrared spectroscopy, and atomic force microscopy. We demonstrate that reasonably well-packed monolayers are obtained in all cases. Their electrical properties were assessed by dc current-voltage characteristics and high-frequency (1-MHz) capacitance measurements. For all of the pi groups investigated here, we observed rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (Lenfant et al., Nano Lett. 2003, 3, 741). The experimental current-voltage curves were analyzed with a simple analytical model, from which we extracted the energy position of the molecular orbital of the pi group in resonance with the Fermi energy of the electrodes. We report experimental studies of the band lineup in these silicon/alkyl pi-conjugated molecule/metal junctions. We conclude that Fermi-level pinning at the pi group/metal interface is mainly responsible for the observed absence of a dependence of the rectification effect on the nature of the pi groups, even though the groups examined were selected to have significant variations in their electronic molecular orbitals.     

Etude viscosimétrique des effets structuraux du cation calcium sur des solutions contenant l'anion alginate

Résumé Le comportement en viscosité sous différentes vitesses de cisaillement, à différentes températures, de solutions d'alginate de sodium à des concentrations variant entre 0,05% et 1%, auxquelles on a ajouté du chlorure de calcium en quantité variable, est qualitativement toujours le même; pour des quantités croissantes de chlorure de calcium, à concentration fixe en alginate de sodium, à une phase de dépression de la viscosité succède une phase de croissance très rapide, suivie à nouveau d'une phase de décroissance. Dans la première phase les variations de la viscositè avec la vitesse de cisaillement sont représentables par un modèle répondant à la Théorie d'Eyring; dans les phases suivantes l'écoulement est représenté par une loi du type =a^b avec b<0. Cette différence dans le mode d'écoulement tiendrait à l'apparition, à partir d'une concentration en chlorure de calcium suffisante, d'une structure tridimensionelle plus ou moins stable suivant la concentration en ions calcium.Discours prononcé lors du congrès annuel des rhéologues allemands à Berlin le 9 juin, 1966.     

The neuroblast and angioblast chemotaxic factor SDF-1 (CXCL12) expression is briefly up regulated by reactive astrocytes in brain following neonatal hypoxic-ischemic injury

Background  

Stromal cell-derived factor 1 (SDF-1 or CXCL12) is chemotaxic for CXCR4 expressing bone marrow-derived cells. It functions in brain embryonic development and in response to ischemic injury in helping guide neuroblast migration and vasculogenesis. In experimental adult stroke models SDF-1 is expressed perivascularly in the injured region up to 30 days after the injury, suggesting it could be a therapeutic target for tissue repair strategies. We hypothesized that SDF-1 would be expressed in similar temporal and spatial patterns following hypoxic-ischemic (HI) injury in neonatal brain.