Temperature dependence of the dielectric strength of zinc sulfide films

The temperature dependence of the dielectric strength E_pn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T=20–200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the E_pn=f(T) curve. Data on the temperature dependence of the capacitance and loss-angle are given for thin-film systems based on ZnS:Mn. Tomsk State Academy of Control Systems and Radioelectronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 91–94, June, 1966.     

Modification of the titanium film–aluminum substrate system by a high-intensity pulsed electron beam with a submillisecond duration

Numerical simulation of the thermal processes that occur during doping of an Al surface with titanium by the method of liquid-phase mixing of a film–substrate system using an intense pulsed electron beam is carried out. As a result of our studies, it is shown that melting of the Ti-film–Al-substrate system makes it possible to form a multiphase submicrocrystalline structure with high strength and tribological properties in the surface layer.     

Formation of F-centers in KCL crystals grown with vibration of the melt

Russian Physics Journal -     

High-speed s-diodes with GaAs:Fe structure,produced by gas-phase epitaxy

The electrical characteristics of diodes formed of epitaxial layers of gallium arsenide doped with iron during growth from the gas phase are studied. It is shown that these diodes have an s-shaped current-voltage characteristic and can be used as high speed switches with switching times of 10^–10 sec.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 3–6, November, 1981.