首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   379877篇
  免费   2741篇
  国内免费   1026篇
化学   201365篇
晶体学   5919篇
力学   17535篇
综合类   16篇
数学   43353篇
物理学   115456篇
  2020年   3497篇
  2019年   4178篇
  2018年   5838篇
  2017年   5804篇
  2016年   7840篇
  2015年   4229篇
  2014年   7196篇
  2013年   16230篇
  2012年   12368篇
  2011年   14813篇
  2010年   11181篇
  2009年   11215篇
  2008年   14271篇
  2007年   14129篇
  2006年   12870篇
  2005年   11602篇
  2004年   10656篇
  2003年   9735篇
  2002年   9564篇
  2001年   10409篇
  2000年   8060篇
  1999年   6080篇
  1998年   5218篇
  1997年   5330篇
  1996年   4932篇
  1995年   4204篇
  1994年   4401篇
  1993年   4346篇
  1992年   4764篇
  1991年   4891篇
  1990年   4683篇
  1989年   4738篇
  1988年   4600篇
  1987年   4571篇
  1986年   4375篇
  1985年   5644篇
  1984年   5821篇
  1983年   4762篇
  1982年   5023篇
  1981年   4879篇
  1980年   4495篇
  1979年   5039篇
  1978年   5138篇
  1977年   5292篇
  1976年   5311篇
  1975年   4968篇
  1974年   4885篇
  1973年   5108篇
  1972年   3666篇
  1971年   3340篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
131.
If a given finite protoset, together with a given finite matching rule, gives rise to at most countably many different tilings ofd-dimensional space, then at least one of them is periodic. This research was supported in part by the SFB 343 “Diskrete Strukturen in der Mathematik” at Bielefeld University and the Russian Foundation for Fundamental Research.  相似文献   
132.
Methods and schemes to inspect the EUV mirror shape are developed on the basis of a point diffraction interferometer with computer processing of interferograms. A measurement accuracy to within 0.001 of a wavelength in the visual range is achieved.  相似文献   
133.
The kinetics of the formation of poly(carbosiloxane), as well as of alkyl-substituted poly(siloxane), by Karstedt's catalyst catalyzed hydrosilylation were investigated. Linear poly(carbosiloxane), poly[(1,1,3,3-tetramethyldisiloxanyl)ethylene], (PTMDSE), was obtained by hydrosilylation of 1,3-divinyltetramethyldisiloxane (DVTMDS) and 1,1,3,3-tetramethyldisiloxane (TMDS), while alkyl-substituted poly(siloxane), poly(methyldecylsiloxane), (PMDS), was synthesized by hydrosilylation of poly(methylhydrosiloxane) (PMHS) and 1-decene. To investigate the kinetics of PTMDSE formation, two series of experiments were performed at reaction temperatures ranging from 25 to 56 °C and with catalyst concentrations ranging from 7.0 × 10−6 to 3.1 × 10−5 mol Pt/mol CHCH2. A series of experiments was performed at reaction temperatures ranging from 28 to 48 °C, with catalyst concentrations of 7.0 ×10−6 mol of Pt per mol of CHCH2, when kinetics of PMDS formation was investigated. All reactions were carried out in bulk, with equimolar amounts of the reacting Si H and CHCH2 groups. The course of the reactions was monitored by following the disappearance of the Si H bands using quantitative infrared spectroscopy. The results obtained showed typical first order kinetics for the PTMDSE formation, consistent with the proposed reaction mechanism. In the case of PMDS an induction period occurred at lower reaction temperatures, but disappeared at 44 °C and the rate of Si H conversion also started to follow the first-order kinetics. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2246–2258, 2007  相似文献   
134.
New diphenyldiacetylenes of the type with A, B = H and/or F; m = 0, 1; n = 1-4; and X = C n H 2n + 1 , F, CF 3 or CN were synthesized and their mesomorphic properties determined by hot stage polarizing microscopy and DSC. When m = 0, all of these compounds showed only a nematic phase except when X = CF 3 when both nematic and smectic A phases were seen. Both clearing and melting temperatures were higher than those reported for substitution with the corresponding alkyl chains but the much larger increase in clearing temperatures produced considerably wider nematic phases. Eutectic mixtures of a few of these olefins yielded nematic materials also having much wider temperature ranges and higher clearing temperatures than the eutectic mixtures of the alkyl compounds, while retaining their high birefringence and low viscosities. Such materials are of interest for beam-steering devices.

Four of the diacetylenes with m = 1 ( A, B = H) were also prepared ( X = C 6 H 13 , F, n = 2, 3). When X was C 6 H 13 ( n = 2), the nematic range was smaller in the 2- than in the 1-olefin but wider than in the alkyl series. When X = F, either no nematic phase or a monotropic one was observed, whereas the 1-olefins gave a much wider nematic phase. Both transition temperatures were lower than those for the corresponding 1-olefin and alkyl analogues. The compound with X = C 6 H 13 and n = 2 had a melting temperature below room temperature.  相似文献   
135.
We consider random walks of two essentially different classes of random walkers, namely, of vicious and friendly ones, on one-dimensional lattices with periodic boundary conditions. The walkers are called vicious since, arriving at a lattice site, they annihilate not only one another but all the remaining walkers as well. On the contrary, an arbitrary number of friendly walkers can share the same lattice sites. It is shown that a natural model describing the behavior of friendly walkers is an integrable model of the boson type. A representation of the generating function for the number of the lattice paths performed by a fixed number of friendly walkers for a certain number of steps is obtained. Bibliography: 22 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 335, 2006, pp. 59–74.  相似文献   
136.
The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al2O3(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 109–1010 cm−2. The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al2O3 as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.  相似文献   
137.
138.
New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined.  相似文献   
139.
Raman scattering in glasses is investigated theoretically. The experimental Raman spectra of glasses exhibit a low-frequency peak (at ~10 cm?1) that, as a rule, is attributed to vibrational modes of nanometer-sized structural units (nanocrystallites). It is established that the elastic moduli of nanocrystallites must necessarily be dependent on their sizes due to the Laplace pressure effect. A theory of the low-frequency peak is constructed using a realistic size distribution function of nanocrystallites with allowance made for the Laplace pressure effect and the dissipation of vibrational energy. Within this theory, the shape of the low-frequency peak and its evolution with temperature can be analyzed quantitatively. The proposed approach offers a physical interpretation of the experimental data and provides insight into the relation of the characteristic nanocrystallite sizes to the elastic moduli and surface tension coefficients of materials.  相似文献   
140.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号