液晶显示器用衬垫料的扫描电镜图像

论述了液晶显示器 (LCD)用衬垫料的作用和性能要求。给出了液晶显示器用衬垫料的扫描电镜图像。该图像对观测衬垫料的粒径分布和控制液晶显示器的盒厚均匀程度 ,消除液晶显示器的底色差异具有一定的意义。实验所得图像为从事液晶显示器的工程技术人员提供了清晰的衬垫料图像 ,为排除衬垫料的不均匀因素所造成的液晶屏的质量问题提供了依据。     

基于频域方法的三维物体分层重现

基于频域方法实现了数字记录和再现三维物体离轴全息图.通过频谱对应关系求得各个面的频谱分布,使用数字滤波方法,成功地消除了零级衍射和共轭像;通过改变再现距离,分别获取了三维物体各个截面的再现像.     

B(0,N)-graded Lie superalgebras coordinatized by quantum tori Dedicated to Professor Sheng GONG on the occasion of his 75th birthday

We use a fermionic extension of the bosonic module to obtain a class of B(0, A)graded Lie superalgebras with nontrivial central extensions.     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

新型噻吩基取代卟啉的合成及其荧光光谱研究

合成了两种新型噻吩基卟啉－5，15－二（2－噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7a（45．1％）和5，15－二（2－联噻吩基）－2，8，12，18－四乙基－3，7，13，17－四甲基卟啉7b(61.2%),并研究了它们的光谱性质，其中荧光光谱的最大发射峰蜂都在631nm处，量子产率分别为4．1％（7a)和1．4％（7b)。     

Duffing方程的唯三周期解问题

考虑Duffing方程x+g(x,t)=h(t),在g(x,t)满足简单的凸凹性条件。以及g＇(x,t)跨越第一共振点时,本文指出,当强迫振动项h(t)充分小时,所讨论的Duffing方程的2π周期解恰有三个.     

一类平面七次多项式系统赤道环的稳定性与极限环分支

本文研究一类平面七次多项式系统赤道环的稳定性和极限环分支，给出了系统的前12个奇点量公式，可积性条件及在赤道附近存在3个极限环的条件，较为精细地指出了极限环的存在位置。     

Sn-C60薄膜的紫外吸收光谱和X-射线衍射谱分析

对Sn-C60薄膜进行紫外可见光吸收，X-射线衍射和扫描电镜的测定结果显示，薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降，说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁，能带中有杂质能级的存在；样品的X射线衍射峰则对应于面心立方结构；扫描电镜结果显示薄膜为纳米级颗粒组成。     

Radon空间的非标准表示

证明了在扩大的非标准模型中S-空间可完全表示Radon空间并讨论了S-空间的若干性质.还给出一个有限Borel测度空间为Radon空间的充要条件.最后证明了Radon空间的一个＊-有限表示定理.     

A new method for constructing infinite families of k-tight optimal double loop networks

The double loop network (DLN) is a circulant digraph with n nodes and outdegree 2. DLN has been widely used in the designing of local area networks and distributed systems. In this paper, a new method for constructing infinite families of k-tight optimal DLN is presented. For k = 0,1,…,40, the infinite families of k-tight optimal DLN can be constructed by the new method, where the number nk(t,a) of their nodes is a polynomial of degree 2 in t and contains a parameter a. And a conjecture is proposed.