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61.
For vertical-cavity surface-emitting lasers (VCSELs) with polarization-rotated feedback, there exist several synchronization
types such as synchronizations between total powers and synchronizations between separate polarization modes. Based on the
two-mode rate equations, we study and compare numerically the performances of different synchronization types. Our results
show that three synchronization types exhibit good performances when their synchronization conditions are satisfied. They
are the complete synchronization between total powers, complete synchronization between x-polarized modes, and generalized synchronization between x-polarized and y-polarized modes. The former two types are sensitive to the injection rate and spontaneous emission, while the third type
is contrary. Synchronization type with the best performance may switch from one to another, with changing of injection rate
and spontaneous emission factor. 相似文献
62.
Bing Yong HSIE 《数学学报(英文版)》2006,22(2):507-514
This paper gives a p-adic analogue of the Mackey theory, which relates representations of a group of type G - H × t A to systems of imprimitivity. 相似文献
63.
64.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
65.
Ling-yan Tang Song-he Song 《应用数学学报(英文版)》2007,23(2):303-310
In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities. 相似文献
66.
Jian‐guo Tang 《Mathematical Methods in the Applied Sciences》2006,29(11):1327-1338
An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
67.
68.
We discuss the matrix model in a class of 11D time dependent supersymmetric backgrounds as obtained in [B. Chen, Phys. Lett. B 632 (2006) 393, hep-th/0508191]. We construct the matrix model action through the matrix regularization of the membrane action in the background. We show that the action is exact to all orders of fermionic coordinates. Furthermore we discuss the fuzzy sphere solutions in this background. 相似文献
69.
Huazhong Tang Tao Tang Kun Xu 《Zeitschrift für Angewandte Mathematik und Physik (ZAMP)》2004,55(3):365-382
In this paper, the Kinetic Flux Vector Splitting (KFVS)
scheme is extended to solving the shallow water equations with
source terms. To develop a well-balanced scheme between the source
term and the flow convection, the source term effect is accounted
in the flux evaluation across cell interfaces. This leads to a
modified gas-kinetic scheme with particular application to the
shallow water equations with bottom topography. Numerical
experiments show better resolution of the unsteady solution than
conventional finite difference method and KFVS method with little
additional cost. Moreover, some positivity properties of the
gas-kinetic scheme is established. 相似文献
70.