首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   319030篇
  免费   3892篇
  国内免费   1171篇
化学   169342篇
晶体学   5173篇
力学   13993篇
综合类   10篇
数学   36137篇
物理学   99438篇
  2020年   2387篇
  2019年   2569篇
  2018年   2986篇
  2017年   3083篇
  2016年   5190篇
  2015年   3568篇
  2014年   5275篇
  2013年   14498篇
  2012年   11158篇
  2011年   13670篇
  2010年   9219篇
  2009年   9366篇
  2008年   12761篇
  2007年   12690篇
  2006年   12081篇
  2005年   11098篇
  2004年   10115篇
  2003年   8958篇
  2002年   8739篇
  2001年   10209篇
  2000年   7740篇
  1999年   5943篇
  1998年   4765篇
  1997年   4657篇
  1996年   4475篇
  1995年   4112篇
  1994年   3988篇
  1993年   3797篇
  1992年   4324篇
  1991年   4268篇
  1990年   3977篇
  1989年   3894篇
  1988年   3893篇
  1987年   3808篇
  1986年   3630篇
  1985年   5073篇
  1984年   5136篇
  1983年   4330篇
  1982年   4573篇
  1981年   4298篇
  1980年   4239篇
  1979年   4323篇
  1978年   4453篇
  1977年   4320篇
  1976年   4347篇
  1975年   4221篇
  1974年   4127篇
  1973年   4354篇
  1972年   2711篇
  1971年   2084篇
排序方式: 共有10000条查询结果,搜索用时 31 毫秒
221.
An inverse process with independent positive increments is considered. For such a process, the first hitting time τx of level x as a function of x ≥ 0 is a proper process with independent positive increments. In terms of first hitting times and their Levy measures, multidemensional distribution densities and Laplace transformations are derived. Stationary distributions of increments of the process are investigated. Bibliography: 8 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 311, 2004, pp. 286–297.  相似文献   
222.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).  相似文献   
223.
224.
We report here the successful inclusion of carbon nanotubes (CNs) into a TiO2 matrix prepared by a sol-gel method. The presence of CNs in the sol-gel matrix and the structure of the film were analyzed principally by transmission electron microscopy. Complementary information about the behavior of embedded carbon nanotubes versus heat treatment and ion irradiation were obtained by X-ray photoelectron spectroscopy. The elaboration of an inorganic matrix containing embedded carbon nanotubes leads to a new nanocomposite. The possible applications of this nanocomposite are discussed.  相似文献   
225.
226.
227.
A. B. Mazo 《Fluid Dynamics》2002,37(6):913-918
Plane ideal incompressible flow in a rectangular channel partitioned by a thin permeable barrier (lattice) is considered. In flowing through the lattice the stream suddenly (jumpwise) changes direction and loses energy. The flow is assumed to be vortical; the vorticity is discontinuous on the lattice. A mathematical formulation of the problem for the stream function is proposed in the form of a nonlinear elliptic equation with coefficients discontinuous on the lattice line. A numerical solution is constructed using the finite-element iteration method. The results of the numerical simulation show how the flow velocity profile in the channel can be controlled by means of permeable barriers.  相似文献   
228.
A simple scheme is developed for treatment of vertical bed topography in shallow water flows. The effect of the vertical step on flows is modelled with the shallow water equations including local energy loss terms. The bed elevation is denoted with zb for the left and zb+ for the right values at each grid point, hence exactly representing a discontinuity in the bed topography. The surface gradient method (SGM) is generalized to reconstruct water depths at cell interfaces involving a vertical step so that the fluxes at the cell interfaces can accurately be calculated with a Riemann solver. The scheme is verified by predicting a surge crossing a step, a tidal flow over a step and dam‐break flows on wet/dry beds. The results have shown good agreements compared with analytical solutions and available experimental data. The scheme is efficient, robust, and may be used for practical flow calculations. Copyright © 2002 John Wiley & Sons, Ltd.  相似文献   
229.
Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.  相似文献   
230.
A comprehensive study of the excited electronic states of HCl is reported. Using resonance enhanced multiphoton ionization ((2 + 1) REMPI) and time-of-flight mass spectrometry (TOFMS) over 120 band systems are analyzed. Supersonic jet techniques are used to prepare rotationally cold species for laser spectroscopy in the 77 000 to 96 000 cm−1 region. At least 50 new electronic states are characterized as well as several features only tentatively assigned previously. A long vibrational progression consisting of 29 vibrational levels of the deeply bound V1Σ+(0+) valence/ion-pair state is studied. We also extend the identification and analysis to high vibrational levels of low-lying Rydberg states. The assignments of [2Πi] Rydberg state complexes are evaluated in terms of spin-orbit coupling and united-atom calculations. In several band systems, the spectra exhibit anomalous rotational line intensities and broadened linewidths which are consistent with predissociation. Multiphoton ionization with mass spectrometry permits the investigation of isotope effects as well as the appearance of fragment species associated with repulsive potential curves.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号